Abstract: When an operation amount of an operation lever corresponding to a boom cylinder is equal to or smaller than an operation amount of an operation lever corresponding to an arm cylinder, an estimated velocity of the arm cylinder used for region limiting control is computed on the basis of a first condition defining, in advance, a relation between the operation amount of the operation lever and the estimated velocity of the arm cylinder. When the operation amount of the operation lever corresponding to the boom cylinder is larger than the operation amount of the operation lever corresponding to the arm cylinder, the estimated velocity of the arm cylinder used for the region limiting control is computed as a velocity higher than the estimated velocity of the arm cylinder computed on the basis of the first condition. The behavior of the work device can thereby be stabilized.

Abstract: A surfactant for polymerization including at least one selected from a surfactant represented by R1a—CO—R2a—CO—R3a—OSO3Xa and a surfactant represented by R1b—CO—(CR2b2)n—(OR3b)p—(CR4b2)q-L-OSO3Xb, wherein R1a, R2a, R3a, Xa, R1b, R2b, R3b, R4b, L and Xb are as defined herein. Also disclosed is a composition containing a fluoropolymer and the at least one surfactant, a composition containing a fluoropolymer and a compound represented by (H—(CF2)8—SO3)qM2, where M2 is as defined herein, and a molded article made from the composition containing a fluoropolymer and the compound represented by (H—(CF2)8—SO3)qM2.

Abstract: A concentration device for concentrating a liquid containing a target object, the concentration device including: a container configured to store the liquid containing the target object; a filter in the container; and a position control portion configured to change a position of the filter in the container.

Abstract: Provided is a work machine that can suppress decrease in work efficiency while reducing the possibility of contacting a worker or a dump truck, etc. A movement range is set in advance so as to avoid entry of a worker or a dump truck, etc. into the set movement range. The work machine performs stop control with clearance for an obstacle having entered the movement range, but performs stop control with relatively small clearance (minimum clearance) for a movement range. Thus, the work machine can reduce the frequency of stopping a body or a work implement and suppress decrease in work efficiency. Since the work machine controls the body or the work implement to stop with clearance when the worker or the dump truck, etc. enters the movement range of the work machine, the work machine can reduce the possibility of contacting the worker or the dump truck, etc.

Abstract: A surface emitting laser includes: a semiconductor layer containing a nitride semiconductor, and including a first semiconductor layer, an active layer, and a second semiconductor layer that are stacked in this order, in which the semiconductor layer includes a light emitting region; and a first light reflecting layer and a second light reflecting layer that are opposed to each other with the semiconductor layer being disposed therebetween. The first semiconductor layer has a high dislocation portion disposed outside the light emitting region. The high dislocation portion has an average dislocation density higher than an average dislocation density of the light emitting region.

Abstract: An image sensor includes a CIS (CMOS image sensor) pixel, a DVS (dynamic vision sensor) pixel, and an image signal processor. The CIS pixel includes a photoelectric conversion device generating charges corresponding to an incident light and a readout circuit generating an output voltage corresponding to the generated charges. The DVS pixel detects a change in an intensity of the incident light based on the generated charges to output an event signal and does not include a separate photoelectric conversion device. The image signal processor allows the photoelectric conversion device to be connected to the readout circuit or the DVS pixel.

Abstract: An amplifier includes a first capacitor connected between an input node and a floating node, a second capacitor connected between the floating node and an output node, an amplifying element connected between a power supply voltage and the output node and operating in response to a voltage level of the floating node, a current bias source connected between the output node and a ground voltage, a first reset switch connected between the floating node and an intermediate node and operating in response to a reset bias, a second reset switch connected between the intermediate node and the output node and operating in response to the reset bias, and a reset bias generator circuit that outputs the reset bias in response to a reset signal. The reset bias is one of a reset voltage of the intermediate node, the power supply voltage, and the ground voltage.

Abstract: An image sensor includes a CIS (CMOS image sensor) pixel, a DVS (dynamic vision sensor) pixel, and an image signal processor. The CIS pixel includes a photoelectric conversion device generating charges corresponding to an incident light and a readout circuit generating an output voltage corresponding to the generated charges. The DVS pixel detects a change in an intensity of the incident light based on the generated charges to output an event signal and does not include a separate photoelectric conversion device. The image signal processor allows the photoelectric conversion device to be connected to the readout circuit or the DVS pixel.

Abstract: An amplifier includes a first capacitor connected between an input node and a floating node, a second capacitor connected between the floating node and an output node, an amplifying element connected between a power supply voltage and the output node and operating in response to a voltage level of the floating node, a current bias source connected between the output node and a ground voltage, a first reset switch connected between the floating node and an intermediate node and operating in response to a reset bias, a second reset switch connected between the intermediate node and the output node and operating in response to the reset bias, and a reset bias generator circuit that outputs the reset bias in response to a reset signal. The reset bias is one of a reset voltage of the intermediate node, the power supply voltage, and the ground voltage.

Abstract: A surface-emitting laser according to an embodiment of the present disclosure includes a current constriction region having an opening and formed by impurities injected into a laminate from side of a second semiconductor layer; and a first DBR layer on side of a first semiconductor layer and a second DBR layer on the side of the second semiconductor layer having the laminate interposed therebetween at a position facing the opening. At the opening, an opening diameter close to the first DBR layer is larger than an opening diameter close to the second DBR layer.

Abstract: A method of manufacturing a light emitting element includes, at least: (A) forming a stacked structure 20 which includes a GaN-based compound semiconductor and in which a first compound semiconductor layer 21, an active layer 23, and a second compound semiconductor layer 22 are stacked, and forming a concave mirror section 43 on a first surface side of the first compound semiconductor layer 21; then (B) forming a photosensitive material layer 35 over the second compound semiconductor layer 22; and thereafter (C) exposing the photosensitive material layer 35 to light from the concave mirror section side through the stacked structure 20, to obtain a treatment mask layer including the photosensitive material layer 35, and then processing the second compound semiconductor layer 22 by use of the treatment mask layer.

Abstract: A light-emitting device according to an embodiment of the present disclosure includes a laminate. The laminate includes an active layer, a first semiconductor layer, and a second semiconductor layer. The first semiconductor layer and the second semiconductor layer sandwich the active layer in between. The light-emitting device further includes a current confining layer, a concave-shaped first reflecting mirror provided on side of the first semiconductor layer, and a second reflecting mirror provided on side of the second semiconductor layer. The current confining layer has an opening. The first reflecting mirror and the second reflecting mirror sandwich the laminate and the opening in between. The light-emitting device further includes a first reflecting layer and a phosphor layer. The first reflecting layer is disposed at a position opposed to the first reflecting mirror with a predetermined gap in between.

Abstract: A controller for a hydraulic excavator includes a first speed computation section that calculates a first speed of an arm cylinder from a value detected by an operation amount sensor; a second speed computation section that calculates a second speed from a value detected by a posture sensor and a third speed computation section calculates a third speed that is used as the speed of the arm cylinder in an actuator control section adapted to execute MC (machine control). The third speed computation section calculates the first speed as the third speed during the period between the detection of an input of operation for an arm by the operation amount sensor and predetermined time to, the third speed as a speed calculated from the first speed and the second speed during the period between t0 and time t1, and the second speed as the third speed at and after time t1.

Abstract: A light emitting element according to the present disclosure includes a first light reflecting layer 41, a laminated structure 20, and a second light reflecting layer 42 laminated to each other. The laminated structure 20 includes a first compound semiconductor layer 21, a light emitting layer 23, and a second compound semiconductor layer 22 laminated to each other from a side of the first light reflecting layer. Light from the laminated structure 20 is emitted to an outside via the first light reflecting layer 41 or the second light reflecting layer 42. The first light reflecting layer 41 has a structure in which at least two types of thin films 41A and 41B are alternately laminated to each other in plural numbers. A film thickness modulating layer 80 is provided between the laminated structure 20 and the first light reflecting layer 41.

Abstract: A light-emitting element includes: a laminated structure body 20 which is formed from a GaN-based compound semiconductor and in which a first compound semiconductor layer 21 including a first surface 21a and a second surface 21b that is opposed to the first surface 21a, an active layer 23 that faces the second surface 21b of the first compound semiconductor layer 21, and a second compound semiconductor layer 22 including a first surface 22a that faces the active layer 23 and a second surface 22b that is opposed to the first surface 22a are laminated; a first light reflection layer 41 that is provided on the first surface 21a side of the first compound semiconductor layer 21; and a second light reflection layer 42 that is provided on the second surface 22b side of the second compound semiconductor layer 22. The first light reflection layer 41 includes a concave mirror portion 43, and the second light reflection layer 42 has a flat shape.

Abstract: An amplifier includes a first capacitor connected between an input node and a floating node, a second capacitor connected between the floating node and an output node, an amplifying element connected between a power supply voltage and the output node and operating in response to a voltage level of the floating node, a current bias source connected between the output node and a ground voltage, a first reset switch connected between the floating node and an intermediate node and operating in response to a reset bias, a second reset switch connected between the intermediate node and the output node and operating in response to the reset bias, and a reset bias generator circuit that outputs the reset bias in response to a reset signal. The reset bias is one of a reset voltage of the intermediate node, the power supply voltage, and the ground voltage.

Abstract: A light-emitting element includes: a laminated structure body 20 which is formed from a GaN-based compound semiconductor and in which a first compound semiconductor layer 21 including a first surface 21a and a second surface 21b that is opposed to the first surface 21a, an active layer 23 that faces the second surface 21b of the first compound semiconductor layer 21, and a second compound semiconductor layer 22 including a first surface 22a that faces the active layer 23 and a second surface 22b that is opposed to the first surface 22a are laminated; a first light reflection layer 41 that is provided on the first surface 21a side of the first compound semiconductor layer 21; and a second light reflection layer 42 that is provided on the second surface 22b side of the second compound semiconductor layer 22. The first light reflection layer 41 includes a concave mirror portion 43, and the second light reflection layer 42 has a flat shape.

Abstract: A hydraulic excavator (1) is provided with a controller (40) including an actuator control section (81) which, when an operation device (45, 46) is operated, controls at least one of a plurality of hydraulic actuators (5, 6, 7) in accordance with the velocities of the plurality of hydraulic actuators (5, 6, 7) and a predetermined condition. The controller (40) determines, based on a sensed value from a posture sensor (50), the direction of a load exerted on an arm cylinder (6) due to the weight of an arm (9), outputs, upon determining that the direction of the load is opposite to a driving direction of the arm cylinder (6), a second velocity Vamt2 to the actuator control section (81), and outputs, upon determining that the direction of the load is the same as the driving direction of the arm cylinder (6), a third velocity Vamt3 to the actuator control section (81).

Abstract: A solid-state imaging device includes a pixel array with unit pixels each having a photoelectric conversion device arranged in a matrix. Column signal lines are wired with respect to one column in the pixel arrangement and pixels are regularly connected to the column signal lines in accordance with rows in which pixels are positioned. A pixel signal reading unit has a column processing unit that reads pixel signals in units of plural pixels from the pixel array and performs column processing to read signals on a column basis, wherein the pixel signal reading unit includes a column input unit which can connect one or plural column signal lines arranged at a corresponding column to an input of one column processing unit through plural capacitors connected in parallel The column input unit has switches which can change a connection state between capacitors and column signal lines corresponding to the column.

Abstract: A surface emitting laser includes: a semiconductor layer containing a nitride semiconductor, and including a first semiconductor layer, an active layer, and a second semiconductor layer that are stacked in this order, in which the semiconductor layer includes a light emitting region; and a first light reflecting layer and a second light reflecting layer that are opposed to each other with the semiconductor layer being disposed therebetween. The first semiconductor layer has a high dislocation portion disposed outside the light emitting region. The high dislocation portion has an average dislocation density higher than an average dislocation density of the light emitting region.