Abstract: An operation assistance system for a work machine includes an operation assistance function and a work assistance function. Both of the operation assistance function and the work assistance function are switchable between enabled and disabled states. When the work assistance function is in an enabled state and when the work area is set outside of the stop area to surround the stop area, the operation assistance system sets the work area as the stop area such that the stop area is extended and overlaid on the work area, and automatically enables the operation assistance function when the operation assistance function is in a disabled state.

Abstract: An image sensor includes a CIS (CMOS image sensor) pixel, a DVS (dynamic vision sensor) pixel, and an image signal processor. The CIS pixel includes a photoelectric conversion device generating charges corresponding to an incident light and a readout circuit generating an output voltage corresponding to the generated charges. The DVS pixel detects a change in an intensity of the incident light based on the generated charges to output an event signal and does not include a separate photoelectric conversion device. The image signal processor allows the photoelectric conversion device to be connected to the readout circuit or the DVS pixel.

Abstract: A light emitting element according to the present disclosure includes a first light reflecting layer 41, a laminated structure 20, and a second light reflecting layer 42 laminated to each other. The laminated structure 20 includes a first compound semiconductor layer 21, a light emitting layer 23, and a second compound semiconductor layer 22 laminated to each other from a side of the first light reflecting layer. Light from the laminated structure 20 is emitted to an outside via the first light reflecting layer 41 or the second light reflecting layer 42. The first light reflecting layer 41 has a structure in which at least two types of thin films 41A and 41B are alternately laminated to each other in plural numbers. A film thickness modulating layer 80 is provided between the laminated structure 20 and the first light reflecting layer 41.

Abstract: Provided is a work machine that can suppress decrease in work efficiency while reducing the possibility of contacting a worker or a dump truck, etc. A movement range is set in advance so as to avoid entry of a worker or a dump truck, etc. into the set movement range. The work machine performs stop control with clearance for an obstacle having entered the movement range, but performs stop control with relatively small clearance (minimum clearance) for a movement range. Thus, the work machine can reduce the frequency of stopping a body or a work implement and suppress decrease in work efficiency. Since the work machine controls the body or the work implement to stop with clearance when the worker or the dump truck, etc. enters the movement range of the work machine, the work machine can reduce the possibility of contacting the worker or the dump truck, etc.

Abstract: An image sensor includes a CIS (CMOS image sensor) pixel, a DVS (dynamic vision sensor) pixel, and an image signal processor. The CIS pixel includes a photoelectric conversion device generating charges corresponding to an incident light and a readout circuit generating an output voltage corresponding to the generated charges. The DVS pixel detects a change in an intensity of the incident light based on the generated charges to output an event signal and does not include a separate photoelectric conversion device. The image signal processor allows the photoelectric conversion device to be connected to the readout circuit or the DVS pixel.

Abstract: Provided is a work machine including a controller configured to perform area restriction control for preventing a vehicle body from deviating from a work area set in a construction area. In this work machine, it is possible to easily set an area for which operation of the work machine is to be restricted in an actual space to a desired position, and to avoid displacement of the area for which the work machine is to be actually controlled from the set area. The work machine includes a controller configured to perform area restriction control for restricting operation of a vehicle body so as to prevent the vehicle body from deviating from a work area set in a construction area. The controller sets at least a part of the work area based on design data representing a final intended shape of a construction target in the construction area.

Abstract: A light emitting element according to the present disclosure includes: a laminated structure 20 in which a first compound semiconductor layer 21, an active layer 23, and a second compound semiconductor layer 22 are laminated; a first light reflecting layer 41 formed on a first surface side of the first compound semiconductor layer 21; a second light reflecting layer 42 formed on a second surface side of the second compound semiconductor layer 22; a first electrode 31 electrically connected to the first compound semiconductor layer 21; and a second electrode 32 electrically connected to the second compound semiconductor layer 22, a current confinement region 52 that controls an inflow of a current to the active layer 23 is provided, and when an axis in a thickness direction of the laminated structure 20 passing through a center of a current injection region 51 surrounded by the current confinement region 52 is defined as a Z axis, a direction orthogonal to the Z axis is defined as an X direction, and a directi

Abstract: A light-emitting device includes: a light-emitting element array including a plurality of light-emitting elements arranged; and a dummy concave mirror section surrounding the light-emitting element array, and the light-emitting elements each include a stacked structure including a stack of a first compound semiconductor layer, an active layer, and a second compound semiconductor layer, a first light reflection layer formed on a base part surface, and a second light reflection layer. A first convex part is formed in a portion of the base part surface in which the first light reflection layer functioning as a concave mirror is formed, with respect to a second surface of the first compound semiconductor layer, and a second convex part is formed in a portion of an extending part of the base part surface in which the dummy concave mirror section is formed, with respect to the second surface of the first compound semiconductor layer.

Abstract: Provided is a work machine including a front work device, the work machine including a state amount sensor that senses a state amount relating to an action state of the work device and a controller that controls an action of the work machine on the basis of an operation signal transmitted from a remote device by radio communication. The controller assesses a communication status of the radio communication, and, when restricting the action of the work machine on the basis of a result of the assessment, eases the restriction on the action of the work machine, depending on a sensing result from the state amount sensor. As a result, it is possible to appropriately restrict action on the basis of a communication status, while suppressing worsening of workability.

Abstract: Provided is a remote operation device capable of remotely operating efficiently and safely a work machine that is operated from a remote location, even when a communication delay occurs. The remote operation device includes a communication control section 222 that receives a camera video image of a work site captured by a vehicle-mounted camera 91 and vehicle body information of the work machine (hydraulic shovel) 1, a predicted trajectory computing section 220 that computes a predicted trajectory of the work machine (hydraulic shovel) 1 from the vehicle body information and outputs predicted trajectory data to be displayed as a video image on a display device 202, and a display control section 221 that causes the display device 202 to display the camera video image and the video image of the predicted trajectory on the same screen (simultaneously).

Abstract: An amplifier includes a first capacitor connected between an input node and a floating node, a second capacitor connected between the floating node and an output node, an amplifying element connected between a power supply voltage and the output node and operating in response to a voltage level of the floating node, a current bias source connected between the output node and a ground voltage, a first reset switch connected between the floating node and an intermediate node and operating in response to a reset bias, a second reset switch connected between the intermediate node and the output node and operating in response to the reset bias, and a reset bias generator circuit that outputs the reset bias in response to a reset signal. The reset bias is one of a reset voltage of the intermediate node, the power supply voltage, and the ground voltage.

Abstract: An image sensor is provided. The image sensor includes: a semiconductor substrate including a first surface and a second surface, which are opposite to each other; a photoelectric conversion region in the semiconductor substrate; a vertical transfer gate, which extends into the semiconductor substrate from the first surface toward the photoelectric conversion region; a floating diffusion region, which is provided in the semiconductor substrate, is spaced apart from the vertical transfer gate, and is an n-type impurity region; and a second impurity region, which is provided between the vertical transfer gate and the floating diffusion region and is a p-type impurity region.

Abstract: An image sensor includes a CIS (CMOS image sensor) pixel, a DVS (dynamic vision sensor) pixel, and an image signal processor. The CIS pixel includes a photoelectric conversion device generating charges corresponding to an incident light and a readout circuit generating an output voltage corresponding to the generated charges. The DVS pixel detects a change in an intensity of the incident light based on the generated charges to output an event signal and does not include a separate photoelectric conversion device. The image signal processor allows the photoelectric conversion device to be connected to the readout circuit or the DVS pixel.

Abstract: A light emitting element according to the present disclosure includes a first light reflecting layer 41, a laminated structure 20, and a second light reflecting layer 42 laminated to each other. The laminated structure 20 includes a first compound semiconductor layer 21, a light emitting layer 23, and a second compound semiconductor layer 22 laminated to each other from a side of the first light reflecting layer. Light from the laminated structure 20 is emitted to an outside via the first light reflecting layer 41 or the second light reflecting layer 42. The first light reflecting layer 41 has a structure in which at least two types of thin films 41A and 41B are alternately laminated to each other in plural numbers. A film thickness modulating layer 80 is provided between the laminated structure 20 and the first light reflecting layer 41.

Abstract: An image sensor includes a CIS (CMOS image sensor) pixel, a DVS (dynamic vision sensor) pixel, and an image signal processor. The CIS pixel includes a photoelectric conversion device generating charges corresponding to an incident light and a readout circuit generating an output voltage corresponding to the generated charges. The DVS pixel detects a change in an intensity of the incident light based on the generated charges to output an event signal and does not include a separate photoelectric conversion device. The image signal processor allows the photoelectric conversion device to be connected to the readout circuit or the DVS pixel.

Abstract: An amplifier includes a first capacitor connected between an input node and a floating node, a second capacitor connected between the floating node and an output node, an amplifying element connected between a power supply voltage and the output node and operating in response to a voltage level of the floating node, a current bias source connected between the output node and a ground voltage, a first reset switch connected between the floating node and an intermediate node and operating in response to a reset bias, a second reset switch connected between the intermediate node and the output node and operating in response to the reset bias, and a reset bias generator circuit that outputs the reset bias in response to a reset signal. The reset bias is one of a reset voltage of the intermediate node, the power supply voltage, and the ground voltage.

Abstract: A light emitting element according to the present disclosure includes a first light reflecting layer 41, a laminated structure 20, and a second light reflecting layer 42 laminated to each other. The laminated structure 20 includes a first compound semiconductor layer 21, a light emitting layer 23, and a second compound semiconductor layer 22 laminated to each other from a side of the first light reflecting layer. Light from the laminated structure 20 is emitted to an outside via the first light reflecting layer 41 or the second light reflecting layer 42. The first light reflecting layer 41 has a structure in which at least two types of thin films 41A and 41B are alternately laminated to each other in plural numbers. A film thickness modulating layer 80 is provided between the laminated structure 20 and the first light reflecting layer 41.

Abstract: A light emitting element includes: a laminated structure 20 obtained by laminating a first compound semiconductor layer 21, an active layer 23, and a second compound semiconductor layer 22; a first light reflecting layer 41 disposed on a first surface side of the first compound semiconductor layer 21; a second light reflecting layer 42 disposed on a second surface side of the second compound semiconductor layer 22; and light convergence/divergence changing means 50. The first light reflecting layer 41 is formed on a concave mirror portion 43. The second light reflecting layer 42 has a flat shape. When light generated in the active layer 23 is emitted to the outside, a light convergence/divergence state before the light is incident on the light convergence/divergence changing means 50 is different from a light convergence/divergence state after the light passes through the light convergence/divergence changing means 50.

Abstract: A light-emitting element includes: a laminated structure body 20 which is formed from a GaN-based compound semiconductor and in which a first compound semiconductor layer 21 including a first surface 21a and a second surface 21b that is opposed to the first surface 21a, an active layer 23 that faces the second surface 21b of the first compound semiconductor layer 21, and a second compound semiconductor layer 22 including a first surface 22a that faces the active layer 23 and a second surface 22b that is opposed to the first surface 22a are laminated; a first light reflection layer 41 that is provided on the first surface 21a side of the first compound semiconductor layer 21; and a second light reflection layer 42 that is provided on the second surface 22b side of the second compound semiconductor layer 22. The first light reflection layer 41 includes a concave mirror portion 43, and the second light reflection layer 42 has a flat shape.

Abstract: A method for manufacturing a light emitting element according to the present disclosure is a method for manufacturing a light emitting element which includes a stacked structure 20 in which a first compound semiconductor layer 21, an active layer 23, and a second compound semiconductor layer 22 are stacked, a first light reflecting layer 41, and a second light reflecting layer 42 having a flat shape, and in which a base surface 90 positioned on a first surface side of the first compound semiconductor layer 21 has a protrusion 91 protruding in a direction away from the active layer 23, and a cross-sectional shape of the protrusion 91 includes a smooth curve, the method including: forming a first sacrificial layer 81 on the base surface on which the protrusion 91 is to be formed; forming a second sacrificial layer 82 on the entire surface; and performing etching back from the base surface 91 inward by using the second sacrificial layer 82 and the first sacrificial layer 81 as etching masks.