Patents by Inventor Masamichi Ito

Masamichi Ito has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20230282674
    Abstract: An image sensor is provided. The image sensor includes: a semiconductor substrate including a first surface and a second surface, which are opposite to each other; a photoelectric conversion region in the semiconductor substrate; a vertical transfer gate, which extends into the semiconductor substrate from the first surface toward the photoelectric conversion region; a floating diffusion region, which is provided in the semiconductor substrate, is spaced apart from the vertical transfer gate, and is an n-type impurity region; and a second impurity region, which is provided between the vertical transfer gate and the floating diffusion region and is a p-type impurity region.
    Type: Application
    Filed: March 3, 2023
    Publication date: September 7, 2023
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Haewook JEONG, Wonseok LEE, Minchul LEE, Masamichi ITO
  • Publication number: 20230247321
    Abstract: An image sensor includes a CIS (CMOS image sensor) pixel, a DVS (dynamic vision sensor) pixel, and an image signal processor. The CIS pixel includes a photoelectric conversion device generating charges corresponding to an incident light and a readout circuit generating an output voltage corresponding to the generated charges. The DVS pixel detects a change in an intensity of the incident light based on the generated charges to output an event signal and does not include a separate photoelectric conversion device. The image signal processor allows the photoelectric conversion device to be connected to the readout circuit or the DVS pixel.
    Type: Application
    Filed: April 7, 2023
    Publication date: August 3, 2023
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Yunjae SUH, Junseok KIM, Hyunsurk RYU, Keun Joo PARK, Masamichi ITO
  • Publication number: 20230220129
    Abstract: A method for producing a fluoropolymer which includes polymerizing a fluoromonomer in an aqueous medium in the presence of a surfactant to provide a fluoropolymer, the surfactant being represented by the general formula (1): CR1R2R4—CR3R5—X-A, wherein R1 to R5 are each H or a monovalent substituent, with the proviso that at least one of R1 and R3 represents a group represented by the general formula: —Y—R6 and at least one of R2 and R3 represents a group represented by the general formula: —X-A or a group represented by the general formula: —Y—R6; and A is the same or different at each occurrence and is —COOM, —SO3M, or —OSO3M. Also disclosed is a surfactant for polymerization represented by the general formula (1), a method for producing a fluoropolymer using the surfactant, a composition including a fluoropolymer and the surfactant and a molded body including the composition.
    Type: Application
    Filed: March 9, 2023
    Publication date: July 13, 2023
    Applicant: DAIKIN INDUSTRIES, LTD.
    Inventors: Taketo KATO, Satoru YONEDA, Masahiro HIGASHI, Akiyoshi YAMAUCHI, Sumi ISHIHARA, Yosuke KISHIKAWA, Moe HOSOKAWA, Marina NAKANO, Hirotoshi YOSHIDA, Yoshinori NANBA, Kengo ITO, Chiaki OKUI, Kenji ICHIKAWA, Yohei FUJIMOTO, Hirokazu AOYAMA, Masamichi SUKEGAWA, Taku YAMANAKA, Hiroyuki SATO
  • Publication number: 20230208106
    Abstract: A light emitting element according to the present disclosure includes a first light reflecting layer 41, a laminated structure 20, and a second light reflecting layer 42 laminated to each other. The laminated structure 20 includes a first compound semiconductor layer 21, a light emitting layer 23, and a second compound semiconductor layer 22 laminated to each other from a side of the first light reflecting layer. Light from the laminated structure 20 is emitted to an outside via the first light reflecting layer 41 or the second light reflecting layer 42. The first light reflecting layer 41 has a structure in which at least two types of thin films 41A and 41B are alternately laminated to each other in plural numbers. A film thickness modulating layer 80 is provided between the laminated structure 20 and the first light reflecting layer 41.
    Type: Application
    Filed: February 20, 2023
    Publication date: June 29, 2023
    Inventors: Tatsushi HAMAGUCHI, Jugo MITOMO, Hiroshi NAKAJIMA, Masamichi ITO, Susumu SATO
  • Patent number: 11637983
    Abstract: An image sensor includes a CIS (CMOS image sensor) pixel, a DVS (dynamic vision sensor) pixel, and an image signal processor. The CIS pixel includes a photoelectric conversion device generating charges corresponding to an incident light and a readout circuit generating an output voltage corresponding to the generated charges. The DVS pixel detects a change in an intensity of the incident light based on the generated charges to output an event signal and does not include a separate photoelectric conversion device. The image signal processor allows the photoelectric conversion device to be connected to the readout circuit or the DVS pixel.
    Type: Grant
    Filed: October 1, 2021
    Date of Patent: April 25, 2023
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Yunjae Suh, Junseok Kim, Hyunsurk Ryu, Keun Joo Park, Masamichi Ito
  • Patent number: 11621675
    Abstract: An amplifier includes a first capacitor connected between an input node and a floating node, a second capacitor connected between the floating node and an output node, an amplifying element connected between a power supply voltage and the output node and operating in response to a voltage level of the floating node, a current bias source connected between the output node and a ground voltage, a first reset switch connected between the floating node and an intermediate node and operating in response to a reset bias, a second reset switch connected between the intermediate node and the output node and operating in response to the reset bias, and a reset bias generator circuit that outputs the reset bias in response to a reset signal. The reset bias is one of a reset voltage of the intermediate node, the power supply voltage, and the ground voltage.
    Type: Grant
    Filed: September 7, 2021
    Date of Patent: April 4, 2023
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Seungnam Choi, Yunjae Suh, Masamichi Ito, Junseok Kim
  • Patent number: 11611196
    Abstract: A light emitting element according to the present disclosure includes a first light reflecting layer 41, a laminated structure 20, and a second light reflecting layer 42 laminated to each other. The laminated structure 20 includes a first compound semiconductor layer 21, a light emitting layer 23, and a second compound semiconductor layer 22 laminated to each other from a side of the first light reflecting layer. Light from the laminated structure 20 is emitted to an outside via the first light reflecting layer 41 or the second light reflecting layer 42. The first light reflecting layer 41 has a structure in which at least two types of thin films 41A and 41B are alternately laminated to each other in plural numbers. A film thickness modulating layer 80 is provided between the laminated structure 20 and the first light reflecting layer 41.
    Type: Grant
    Filed: October 13, 2017
    Date of Patent: March 21, 2023
    Assignee: Sony Corporation
    Inventors: Tatsushi Hamaguchi, Jugo Mitomo, Hiroshi Nakajima, Masamichi Ito, Susumu Sato
  • Patent number: 11594859
    Abstract: A light emitting element includes: a laminated structure 20 obtained by laminating a first compound semiconductor layer 21, an active layer 23, and a second compound semiconductor layer 22; a first light reflecting layer 41 disposed on a first surface side of the first compound semiconductor layer 21; a second light reflecting layer 42 disposed on a second surface side of the second compound semiconductor layer 22; and light convergence/divergence changing means 50. The first light reflecting layer 41 is formed on a concave mirror portion 43. The second light reflecting layer 42 has a flat shape. When light generated in the active layer 23 is emitted to the outside, a light convergence/divergence state before the light is incident on the light convergence/divergence changing means 50 is different from a light convergence/divergence state after the light passes through the light convergence/divergence changing means 50.
    Type: Grant
    Filed: May 9, 2018
    Date of Patent: February 28, 2023
    Assignee: Sony Corporation
    Inventors: Jugo Mitomo, Tatsushi Hamaguchi, Hiroshi Nakajima, Masamichi Ito, Susumu Sato
  • Publication number: 20230055932
    Abstract: A light-emitting element includes: a laminated structure body 20 which is formed from a GaN-based compound semiconductor and in which a first compound semiconductor layer 21 including a first surface 21a and a second surface 21b that is opposed to the first surface 21a, an active layer 23 that faces the second surface 21b of the first compound semiconductor layer 21, and a second compound semiconductor layer 22 including a first surface 22a that faces the active layer 23 and a second surface 22b that is opposed to the first surface 22a are laminated; a first light reflection layer 41 that is provided on the first surface 21a side of the first compound semiconductor layer 21; and a second light reflection layer 42 that is provided on the second surface 22b side of the second compound semiconductor layer 22. The first light reflection layer 41 includes a concave mirror portion 43, and the second light reflection layer 42 has a flat shape.
    Type: Application
    Filed: October 27, 2022
    Publication date: February 23, 2023
    Inventors: Susumu SATO, Tatsushi HAMAGUCHI, Shoichiro IZUMI, Noriyuki FUTAGAWA, Masamichi ITO, Jugo MITOMO, Hiroshi NAKAJIMA
  • Publication number: 20230044675
    Abstract: A method for manufacturing a light emitting element according to the present disclosure is a method for manufacturing a light emitting element which includes a stacked structure 20 in which a first compound semiconductor layer 21, an active layer 23, and a second compound semiconductor layer 22 are stacked, a first light reflecting layer 41, and a second light reflecting layer 42 having a flat shape, and in which a base surface 90 positioned on a first surface side of the first compound semiconductor layer 21 has a protrusion 91 protruding in a direction away from the active layer 23, and a cross-sectional shape of the protrusion 91 includes a smooth curve, the method including: forming a first sacrificial layer 81 on the base surface on which the protrusion 91 is to be formed; forming a second sacrificial layer 82 on the entire surface; and performing etching back from the base surface 91 inward by using the second sacrificial layer 82 and the first sacrificial layer 81 as etching masks.
    Type: Application
    Filed: December 10, 2020
    Publication date: February 9, 2023
    Inventors: KENTARO HAYASHI, TATSUSHI HAMAGUCHI, MASAMICHI ITO
  • Patent number: 11489314
    Abstract: A light-emitting element includes: a laminated structure body 20 which is formed from a GaN-based compound semiconductor and in which a first compound semiconductor layer 21 including a first surface 21a and a second surface 21b that is opposed to the first surface 21a, an active layer 23 that faces the second surface 21b of the first compound semiconductor layer 21, and a second compound semiconductor layer 22 including a first surface 22a that faces the active layer 23 and a second surface 22b that is opposed to the first surface 22a are laminated; a first light reflection layer 41 that is provided on the first surface 21a side of the first compound semiconductor layer 21; and a second light reflection layer 42 that is provided on the second surface 22b side of the second compound semiconductor layer 22. The first light reflection layer 41 includes a concave mirror portion 43, and the second light reflection layer 42 has a flat shape.
    Type: Grant
    Filed: December 18, 2020
    Date of Patent: November 1, 2022
    Assignee: Sony Corporation
    Inventors: Susumu Sato, Tatsushi Hamaguchi, Shoichiro Izumi, Noriyuki Futagawa, Masamichi Ito, Jugo Mitomo, Hiroshi Nakajima
  • Patent number: 11453995
    Abstract: A hydraulic excavator (1) is provided with a controller (40) including an actuator control section (81) which, when an operation device (45, 46) is operated, controls at least one of a plurality of hydraulic actuators (5, 6, 7) in accordance with the velocities of the plurality of hydraulic actuators (5, 6, 7) and a predetermined condition. The controller (40) determines, based on a sensed value from a posture sensor (50), the direction of a load exerted on an arm cylinder (6) due to the weight of an arm (9), outputs, upon determining that the direction of the load is opposite to a driving direction of the arm cylinder (6), a second velocity Vamt2 to the actuator control section (81), and outputs, upon determining that the direction of the load is the same as the driving direction of the arm cylinder (6), a third velocity Vamt3 to the actuator control section (81).
    Type: Grant
    Filed: April 17, 2018
    Date of Patent: September 27, 2022
    Assignee: HITACHI CONSTRUCTION MACHINERY CO., LTD.
    Inventors: Masamichi Ito, Ryuu Narikawa, Shinya Imura
  • Publication number: 20220282459
    Abstract: Provided is an operation assistance system for a work machine having both operation assistance and work assistance functions, capable of reducing the inconvenience to an operator or the like of setting an area of the operation assistance function and an area of the work assistance function, and preventing a collision of the work machine with an object in a work area. The operation assistance system for a work machine has the operation assistance function of stopping a hydraulic excavator (work machine) 1 when an object is detected in a stop area 40 set in advance and the work assistance function of preventing the hydraulic excavator (work machine) 1 from going out of a work area 51 set in advance.
    Type: Application
    Filed: March 25, 2020
    Publication date: September 8, 2022
    Inventors: Takaaki CHIBA, Shinya IMURA, Shinjiro YAMAMOTO, Masamichi ITO, Koji SHIWAKU
  • Patent number: 11411372
    Abstract: A method of manufacturing a light emitting element includes, at least: (A) forming a stacked structure 20 which includes a GaN-based compound semiconductor and in which a first compound semiconductor layer 21, an active layer 23, and a second compound semiconductor layer 22 are stacked, and forming a concave mirror section 43 on a first surface side of the first compound semiconductor layer 21; then (B) forming a photosensitive material layer 35 over the second compound semiconductor layer 22; and thereafter (C) exposing the photosensitive material layer 35 to light from the concave mirror section side through the stacked structure 20, to obtain a treatment mask layer including the photosensitive material layer 35, and then processing the second compound semiconductor layer 22 by use of the treatment mask layer.
    Type: Grant
    Filed: April 27, 2018
    Date of Patent: August 9, 2022
    Assignee: Sony Corporation
    Inventors: Tatsushi Hamaguchi, Jugo Mitomo, Susumu Sato, Hiroshi Nakajima, Masamichi Ito, Hidekazu Kawanishi
  • Publication number: 20220247149
    Abstract: A light emitting element array includes a plurality of light emitting elements 10A arranged. Each light emitting element 10A includes: a stacked structure 20 including a stack of a first compound semiconductor layer 21 having a first surface 21a and a second surface 21b, an active layer 23 facing the second surface 21b of the first compound semiconductor layer 21, and a second compound semiconductor layer 22 having a first surface 22a and a second surface 22b; a first light reflection layer 41 formed on a base part surface 90 located on a first surface side of the first compound semiconductor layer 21; and a second light reflection layer 42 formed on a second surface side of the second compound semiconductor layer 22 and having a flat shape. The base part surface 90 extends to a peripheral region 99 surrounded by the plurality of light emitting elements. The base part surface 90 has a concavo-convex shape, and is differentiable.
    Type: Application
    Filed: May 25, 2020
    Publication date: August 4, 2022
    Inventors: TATSUSHI HAMAGUCHI, KENTARO HAYASHI, MASAMICHI ITO, MIKIHIRO YOKOZEKI, RINTARO KODA
  • Patent number: 11374384
    Abstract: A light-emitting device according to an embodiment of the present disclosure includes a laminate. The laminate includes an active layer, and a first semiconductor layer and a second semiconductor layer sandwiching the active layer. This light-emitting device further includes a current constriction layer having an opening and a vertical resonator including a first reflecting mirror having a concave-curved shape on the first semiconductor layer side and a second reflecting mirror on the second semiconductor side. The first reflecting mirror and the second reflecting mirror sandwich the laminate and the opening. This light-emitting device further includes an optically transparent substrate between the first reflecting mirror and the laminate. The optically transparent substrate has a first convex portion having a convex-curved shape and one or more second convex portions on a surface on the side opposite to the laminate. The first convex portion is in contact with the first reflecting mirror.
    Type: Grant
    Filed: April 16, 2018
    Date of Patent: June 28, 2022
    Assignee: Sony Corporation
    Inventors: Susumu Sato, Tatsushi Hamaguchi, Jugo Mitomo, Hiroshi Nakajima, Masamichi Ito, Hidekazu Kawanishi
  • Publication number: 20220186458
    Abstract: When an operation amount of an operation lever corresponding to a boom cylinder is equal to or smaller than an operation amount of an operation lever corresponding to an arm cylinder, an estimated velocity of the arm cylinder used for region limiting control is computed on the basis of a first condition defining, in advance, a relation between the operation amount of the operation lever and the estimated velocity of the arm cylinder. When the operation amount of the operation lever corresponding to the boom cylinder is larger than the operation amount of the operation lever corresponding to the arm cylinder, the estimated velocity of the arm cylinder used for the region limiting control is computed as a velocity higher than the estimated velocity of the arm cylinder computed on the basis of the first condition. The behavior of the work device can thereby be stabilized.
    Type: Application
    Filed: September 29, 2020
    Publication date: June 16, 2022
    Inventors: Tarou AKITA, Takahiro KOBAYASHI, Akihiro NARAZAKI, Masamichi ITO
  • Publication number: 20220145579
    Abstract: Provided is a work machine that can suppress decrease in work efficiency while reducing the possibility of contacting a worker or a dump truck, etc. A movement range is set in advance so as to avoid entry of a worker or a dump truck, etc. into the set movement range. The work machine performs stop control with clearance for an obstacle having entered the movement range, but performs stop control with relatively small clearance (minimum clearance) for a movement range. Thus, the work machine can reduce the frequency of stopping a body or a work implement and suppress decrease in work efficiency. Since the work machine controls the body or the work implement to stop with clearance when the worker or the dump truck, etc. enters the movement range of the work machine, the work machine can reduce the possibility of contacting the worker or the dump truck, etc.
    Type: Application
    Filed: September 30, 2019
    Publication date: May 12, 2022
    Inventors: Shinya IMURA, Masamichi ITO, Hidekazu MORIKI, Yuho SAITO
  • Patent number: 11309686
    Abstract: A surface emitting laser includes: a semiconductor layer containing a nitride semiconductor, and including a first semiconductor layer, an active layer, and a second semiconductor layer that are stacked in this order, in which the semiconductor layer includes a light emitting region; and a first light reflecting layer and a second light reflecting layer that are opposed to each other with the semiconductor layer being disposed therebetween. The first semiconductor layer has a high dislocation portion disposed outside the light emitting region. The high dislocation portion has an average dislocation density higher than an average dislocation density of the light emitting region.
    Type: Grant
    Filed: April 17, 2018
    Date of Patent: April 19, 2022
    Assignee: SONY CORPORATION
    Inventors: Hiroshi Nakajima, Tatsushi Hamaguchi, Jugo Mitomo, Susumu Sato, Masamichi Ito, Hidekazu Kawanishi
  • Publication number: 20220021835
    Abstract: An image sensor includes a CIS (CMOS image sensor) pixel, a DVS (dynamic vision sensor) pixel, and an image signal processor. The CIS pixel includes a photoelectric conversion device generating charges corresponding to an incident light and a readout circuit generating an output voltage corresponding to the generated charges. The DVS pixel detects a change in an intensity of the incident light based on the generated charges to output an event signal and does not include a separate photoelectric conversion device. The image signal processor allows the photoelectric conversion device to be connected to the readout circuit or the DVS pixel.
    Type: Application
    Filed: October 1, 2021
    Publication date: January 20, 2022
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Yunjae SUH, Junseok KIM, Hyunsurk RYU, Keun Joo PARK, Masamichi ITO