Abstract: A photovoltaic device includes: a semiconductor substrate stretching in a first direction and a second direction that intersects the first direction; and a first amorphous semiconductor film and a second amorphous semiconductor film both provided on the semiconductor substrate. The second amorphous semiconductor film has a differ conductivity type from the first amorphous semiconductor film. The first amorphous semiconductor film and the second amorphous semiconductor film are divided into a plurality of sections in the first direction and the second direction.

Abstract: A photovoltaic device includes: a p- or n-type semiconductor substrate; a p-type amorphous semiconductor film and an n-type amorphous semiconductor film on a first-face side; p-electrodes on the p-type amorphous semiconductor film; and n-electrodes on the n-type amorphous semiconductor film, wherein: the p-electrodes and the n-electrodes are arranged at intervals; the p-type amorphous semiconductor film surrounds the n-type amorphous semiconductor film in an in-plane direction of the semiconductor substrate; the n-type amorphous semiconductor film has an edge portion providing an overlapping region where the n-type amorphous semiconductor film overlaps the p-type amorphous semiconductor film; and the n-electrodes are disposed in areas of the n-type amorphous semiconductor film that are surrounded by the overlapping region.

Abstract: A photovoltaic device includes: a p- or n-type semiconductor substrate; a p-type amorphous semiconductor film and an n-type amorphous semiconductor film on a first-face side; p-electrodes on the p-type amorphous semiconductor film; and n-electrodes on the n-type amorphous semiconductor film, wherein: the p-electrodes and the n-electrodes are arranged at intervals; the p-type amorphous semiconductor film surrounds the n-type amorphous semiconductor film in an in-plane direction of the semiconductor substrate; the n-type amorphous semiconductor film has an edge portion providing an overlapping region where the n-type amorphous semiconductor film overlaps the p-type amorphous semiconductor film; and the n-electrodes are disposed in areas of the n-type amorphous semiconductor film that are surrounded by the overlapping region.

Abstract: There is provided a photoelectric conversion device which can prevent the contact resistance between a non-crystalline semiconductor layer containing impurities and an electrode formed on the non-crystalline silicon layer from increasing, and can improve the element characteristics. A photoelectric conversion element (10) includes a silicon substrate (12), a first non-crystalline semiconductor layer (20n), a second non-crystalline semiconductor layer (20p), a first electrode (22n), and a second electrode (22p). One electrode (22n) includes first conductive layers (26n, 26p), and second conductive layers (28n, 28p). The first conductive layers (26n, 26p) have a first metal as a main component. The second conductive layers (28n, 28p) contain a second metal which is more likely to be oxidized than the first metal, are formed to be in contact with the first conductive layers (26n, 26p), and are disposed to be closer to the silicon substrate (12) than the first conductive layers (26n, 26p).

Abstract: The fluid transfer connector includes: a plug including a plug body, the plug body including a fluid channel; a socket including a socket body, the socket body including a fluid channel that communicates with the fluid channel of the plug body when the plug is connected to the socket; and a driving mechanism configured to adjust a distance between the plug body and the socket body. The plug body and the socket body can be stopped by the driving mechanism at an initial position where the plug body and the socket body are spaced from and face each other, a connecting position where the fluid channel of the plug body communicates with the fluid channel of the socket body, and an intermediate position between the initial position and the connecting position.

Abstract: A photovoltaic device includes: a semiconductor substrate stretching in a first direction and a second direction that intersects the first direction; and a first amorphous semiconductor film and a second amorphous semiconductor film both provided on the semiconductor substrate. The second amorphous semiconductor film has a differ conductivity type from the first amorphous semiconductor film. The first amorphous semiconductor film and the second amorphous semiconductor film are divided into a plurality of sections in the first direction and the second direction.

Abstract: A photovoltaic device includes: a semiconductor substrate stretching in a first direction and a second direction that intersects the first direction; and a first amorphous semiconductor film and a second amorphous semiconductor film both provided on the semiconductor substrate. The second amorphous semiconductor film has a differ conductivity type from the first amorphous semiconductor film. The first amorphous semiconductor film and the second amorphous semiconductor film are divided into a plurality of sections in the first direction and the second direction. Therefore, the photovoltaic device has an improved heat resistance.

Abstract: Provided is a connector including: a plug to be attached to an opening of a liquid storing container and attached to an inner peripheral surface of the opening; a key ring to be attached to an outer peripheral surface of the opening extending along an axial line and including a key hole portion disposed at an outside of the outer peripheral surface with respect to the axial line; and a socket to be detachably attached to the plug and including a key rod portion to be engaged with the key hole portion. The plug and the socket are coupled together in a state where the key hole portion and the key rod portion are engaged with each other.

Abstract: The plug-integrating container includes a container body having an opening part having external threads formed on its outer circumferential surface, a plug having a locking groove for connection to a socket, and a cap having formed on its inner circumferential surface internal threads fastened to the external threads. In the plug-integrating container, the container body has an open end formed at an axis directional end of the opening part, the plug has an annular part formed at an axis directional end and having the same diameter as that of the open end, the open end and the annular part are joined together by welding as they are butted against each other, and the opening part and the plug are accommodated inside the cap when the external threads and the internal threads are fastened together.

Abstract: A photovoltaic element includes: a semiconductor substrate; a first i-type semiconductor film provided on a part of one of surfaces of the semiconductor substrate; a first semiconductor region including a first-conductivity-type semiconductor film provided on the first i-type semiconductor film; a first electrode layer provided on the first semiconductor region; a first conductive film interposed at least at a site between the first semiconductor region and the first electrode layer.

Abstract: Provided is a pressure detection device which includes: a pressure detection unit configured to detect a pressure transmitted to a diaphragm of the pressure detection unit; a flow passage unit in which a flow passage and a diaphragm of the flow passage unit are formed, a fluid being made to flow through the flow passage along a flow direction from an inflow port to an outflow port, and the diaphragm of the flow passafe unit being configured to transmit a pressure of the fluid flowing through the flow passage to the diaphragm of the flow detection unit; and a nut configured to allow the flow passage unit to be detachably mounted on the pressure detection unit. The pressure detection unit includes a mounting detection sensor configured to detect that the flow passage unit is mounted on the pressure detection unit in a state where the diaphragm of the pressure detection unit and the diaphragm of the flow passage unit are in contact with each other.

Abstract: The fluid transfer connector includes: a plug including a plug body, the plug body including a fluid channel; a socket including a socket body, the socket body including a fluid channel that communicates with the fluid channel of the plug body when the plug is connected to the socket; and a driving mechanism configured to adjust a distance between the plug body and the socket body. The plug body and the socket body can be stopped by the driving mechanism at an initial position where the plug body and the socket body are spaced from and face each other, a connecting position where the fluid channel of the plug body communicates with the fluid channel of the socket body, and an intermediate position between the initial position and the connecting position.

Abstract: A photoelectric conversion element includes an n-type semiconductor substrate, a p-type amorphous semiconductor film on the side of a first surface and side surface of the semiconductor substrate, an n-type amorphous semiconductor film on the first surface side of the semiconductor substrate, a p-electrode on the p-type amorphous semiconductor film, and an n-electrode on the n-type amorphous semiconductor film. The p-electrode is located on the p-type amorphous semiconductor film, which is placed on the first surface side and side surface of the semiconductor substrate.

Abstract: Provided is a pressure detection device which includes a pressure detection unit and a flow passage unit. The pressure detection unit includes a pressure sensor including a diaphragm and a first connection portion joined to the diaphragm. The flow passage unit includes a diaphragm and a second connection portion joined to the diaphragm. One of the first connection portion and the second connection portion is formed of a magnet, and the other of the first connection portion and the second connection portion is formed of a magnet or a magnetic body. In a state where the flow passage unit is mounted on the pressure detection unit, the first connection portion and the second connection portion are disposed in a state where the first connection portion and the second connection portion are attracted to each other by a magnetic force.

Abstract: Provided is a pressure detection device, wherein a pressure detection unit includes: a pressure detecting diaphragm; a second connection portion; and four strain resistance portions. One of either a first connection portion or the second connection portion is formed of a magnet, and the other of either the first connection portion or the second connection portion is formed of a magnet or a magnetic body. The first connection portion and the second connection portion are arranged such that the first connection portion and the second connection portion are attracted by a magnetic force in a state where a flow passage unit is mounted on the pressure detection unit. The four strain resistance portions are attached to a region of a second surface of a pressure detecting diaphragm other than a center portion.

Abstract: A photovoltaic device includes: a p- or n-type semiconductor substrate; a p-type amorphous semiconductor film and an n-type amorphous semiconductor film on a first-face side; p-electrodes on the p-type amorphous semiconductor film; and n-electrodes on the n-type amorphous semiconductor film, wherein: the p-electrodes and the n-electrodes are arranged at intervals; the p-type amorphous semiconductor film surrounds the n-type amorphous semiconductor film in an in-plane direction of the semiconductor substrate; the n-type amorphous semiconductor film has an edge portion providing an overlapping region where the n-type amorphous semiconductor film overlaps the p-type amorphous semiconductor film; and the n-electrodes are disposed in areas of the n-type amorphous semiconductor film that are surrounded by the overlapping region.

Abstract: Provided is a pressure detection device including: a pressure sensor including a pressure detection surface for detecting a pressure of a fluid; and a flow channel unit having a flow channel formed therein to guide the fluid to the pressure detection surface. The flow channel unit includes a flow channel body having the flow channel 21a formed therein, and an earth ring disposed in contact with the pressure sensor. The earth ring is formed of a conductive fluororesin material including a fluororesin material and a conductive material in which the fluororesin material is dispersed, and is maintained at a ground potential.

Abstract: To improve connectivity with tubes to be connected to an inlet and an outlet of a flow passage, while increasing the rapidity of an operation of changing a fluid to be passed through the flow passage and also increasing the safety. Provided is a pressure detecting device including a pressure detecting unit detecting a pressure transmitted to a diaphragm, a flow passage unit having a diaphragm for transmitting a pressure of a fluid flowing through the flow passage to the diaphragm, and a nut for removably mounting the flow passage unit onto the pressure detecting unit. The nut mounts the flow passage unit onto the pressure detecting unit when a position of a positioning groove of the pressure detecting unit about an axis coincides with a position of a positioning projection of the flow passage unit about an axis.

Abstract: Provided is a pressure detection device, wherein a pressure detection unit includes: a pressure detecting diaphragm; a second connection portion; and four strain resistance portions. One of either a first connection portion or the second connection portion is formed of a magnet, and the other of either the first connection portion or the second connection portion is formed of a magnet or a magnetic body. The first connection portion and the second connection portion are arranged such that the first connection portion and the second connection portion are attracted by a magnetic force in a state where a flow passage unit is mounted on the pressure detection unit. The four strain resistance portions are attached to a region of a second surface of a pressure detecting diaphragm other than a center portion.