Abstract: There is provided a technique that includes: a process chamber in which a substrate is processed; an exhaust controller configured to control a gas flow path through which a plurality of exhausts in parallel is connected to the process chamber and a gas flow in the gas flow path; an output controller configured to control output of each of the exhausts; and a controller configured to be capable of controlling the exhaust controller and the output controller.

Abstract: Described herein is a technique capable of adjusting an inner pressure of a process chamber into a high vacuum state in a short time. According to one aspect of the technique, there is provided a substrate processing apparatus including: a pressure sensor; a first exhaust line including a first pipe and a first valve provided thereat; a second exhaust line including a second pipe and a second valve provided thereat; and a controller for adjusting an inner pressure of a process chamber by performing: (a) reducing the inner pressure, based on information from the pressure sensor, from an atmospheric pressure to a vacuum pressure by using the first exhaust line and the second exhaust line; and (b) adjusting either an opening degree of the first valve or the second valve by switching an exhaust path between the first exhaust line and the second exhaust line according to the process pressure.

Abstract: Described herein is a technique capable of adjusting an inner pressure of a process chamber into a high vacuum state in a short time. According to one aspect of the technique, there is provided a substrate processing apparatus including: a process chamber; a main exhaust line including a first pipe, a first opening degree adjusting valve, an opening/closing valve and a pressure sensor; a bypass exhaust line including a second pipe and a second opening degree adjusting valve; and a controller configured to adjust an inner pressure of the process chamber by: (a) adjusting an opening degree of the second opening degree adjusting valve; (b) closing the second opening degree adjusting valve and opening the opening/closing valve and the first opening degree adjusting valve; and (c) closing the opening/closing valve and the first opening degree adjusting valve and adjusting the opening degree of the second opening degree adjusting valve.

Abstract: A substrate processing apparatus includes: a process container; an exhaust path configured to branch into a first exhaust line and a second exhaust line; a first valve that is installed in the first exhaust line; a second valve that is installed in the second exhaust line; a pressure detector; and a pressure control device configured to be capable of: selecting one valve among the first valve and the second valve according to a pressure setting value in the process container, such that a pressure detection value detected by the pressure detector approaches the pressure setting value; setting an opening degree of an other valve, which is not selected among the first valve and the second valve, to a constant state; and adjusting an opening degree of the selected one valve while maintaining the opening degree of the selected one valve at a value greater than zero.

Abstract: There is provided a technique that includes: an exhauster including a casing in which a rotating body is installed; a gas supplier configured to supply an inert gas to the exhauster without passing through a process chamber; and a controller configured to be capable of controlling the gas supplier to supply the inert gas into the casing based on a temperature drop of the rotating body expected in advance in a state where a processing object is not being processed in the process chamber such that a temperature of the rotating body becomes equal to or higher than a target temperature.

Abstract: Described herein is a technique capable of adjusting an inner pressure of a process chamber into a high vacuum state in a short time. According to one aspect of the technique, there is provided a substrate processing apparatus including: a process chamber; a main exhaust line including a first pipe, a first opening degree adjusting valve, an opening/closing valve and a pressure sensor; a bypass exhaust line including a second pipe and a second opening degree adjusting valve; and a controller configured to adjust an inner pressure of the process chamber by: (a) adjusting an opening degree of the second opening degree adjusting valve; (b) closing the second opening degree adjusting valve and opening the opening/closing valve and the first opening degree adjusting valve; and (c) closing the opening/closing valve and the first opening degree adjusting valve and adjusting the opening degree of the second opening degree adjusting valve.

Abstract: According to one aspect of the technique, there is provided a processing apparatus including: a process structure including: a process furnace, in which an object to be processed is processed by a gas, provided in a housing; and an opening configured to enable a maintenance and provided at a rear side of the housing; an exhaust structure configured to allow a maintenance region to be provided at a region facing the opening and to exhaust the gas from the process furnace; and an exhaust apparatus configured to secure the maintenance region at the region facing the opening and placed in contact with a side of the exhaust structure opposite to the process structure.

Abstract: The present invention shortens the time needed to decrease the oxygen concentration in a chamber to be filled with an inert gas to a desired concentration. A substrate processing apparatus includes: a processing chamber configured to process a substrate; and a carrying chamber configured to carry the substrate to the processing chamber. The carrying chamber includes: a plurality of wall bodies configured to form a housing of the carrying chamber; a joint at which the plurality of wall bodies are joined; an isolated space creating member configured to cover the joint and thereby create an isolated space separated from the carrying chamber; and an exhaust section configured to purge gas in the isolated space.

Abstract: The present invention shortens the time needed to decrease the oxygen concentration in a chamber to be filled with an inert gas to a desired concentration. A substrate processing apparatus includes: a processing chamber configured to process a substrate; and a carrying chamber configured to carry the substrate to the processing chamber. The carrying chamber includes: a plurality of wall bodies configured to form a housing of the carrying chamber; a joint at which the plurality of wall bodies are joined; an isolated space creating member configured to cover the joint and thereby create an isolated space separated from the carrying chamber; and an exhaust section configured to purge gas in the isolated space.