Abstract: According to one embodiment, a production management device acquires a first short-term plan generated based on a first long-term plan. The first long-term plan is of a plan of production in a prescribed period. The first short-term plan is of a plan of production in a first period. The device acquires first progress data of a progress in a task, and acquires first prediction data by using the first progress data. The first prediction data is of a prediction of a progress in the task. The device revises the first short-term plan based on the first prediction data, and acquires second prediction data by using second progress data. The second progress data is of a progress in the task. The second prediction data is of a prediction of a progress of the production in the prescribed period. The device generates a second long-term plan in the prescribed period.

Abstract: A method of manufacturing a silicon on insulator substrate includes: preparing a semiconductor substrate including a rear side semiconductor layer, an insulating layer, and a front side semiconductor layer, a first surface of the insulating layer being in contact with a surface of the rear side semiconductor layer, and a first surface of the front side semiconductor layer being in contact with a second surface of the insulating layer; forming a high concentration region in which an impurity concentration is increased in the front side semiconductor layer, by injecting impurities into the front side semiconductor layer; heating the semiconductor substrate having the high concentration region; and epitaxially growing an additional semiconductor layer on a second surface of the front side semiconductor layer of the heated semiconductor substrate, the additional semiconductor layer having a lower impurity concentration than the high concentration region.

Abstract: A method of manufacturing a silicon on insulator substrate includes: preparing a semiconductor substrate including a rear side semiconductor layer, an insulating layer, and a front side semiconductor layer, a first surface of the insulating layer being in contact with a surface of the rear side semiconductor layer, and a first surface of the front side semiconductor layer being in contact with a second surface of the insulating layer; forming a high concentration region in which an impurity concentration is increased in the front side semiconductor layer, by injecting impurities into the front side semiconductor layer; heating the semiconductor substrate having the high concentration region; and epitaxially growing an additional semiconductor layer on a second surface of the front side semiconductor layer of the heated semiconductor substrate, the additional semiconductor layer having a lower impurity concentration than the high concentration region.