Abstract: A light emitting device includes an active layer; at least a portion of the active layer constitutes a gain region. The gain region is continuous from a first end surface and a second end surface. The gain region includes a first portion extending from the first end surface to a first reflective surface in a direction tilted with respect to a normal to the first side surface as viewed two-dimensionally; a second portion extending from the second end surface to the second reflective surface in a direction tilted with respect to a normal to the first side surface as viewed two-dimensionally; and a third portion extending from the first reflective surface to the second reflective surface in a direction tilted with respect to a normal to the first reflective surface as viewed two-dimensionally.

Abstract: A light emitting device includes first and second cladding layers and an active layer therebetween including first and second side surfaces and first and second gain regions, a second side reflectance is higher than a first side reflectance, a first end surface part of the first gain region overlaps a second end surface part of the second gain region in an overlapping plane, the first gain region obliquely extends from the first end surface to a third end surface, the second gain region obliquely extends from the second end surface to a fourth end surface, a first center line connecting the centers of the first and third end surfaces and a second center line connecting the centers of the second and fourth end surfaces intersect, and the overlapping plane is shifted from the intersection point toward the first side surface.

Abstract: A light emitting device includes a substrate, a first cladding layer, an active layer, and a second cladding layer formed in that order, and a reflective part formed above the substrate and separated from the active layer. At least a portion of the active layer constitutes a plurality of gain regions, which forms at least one gain region pair, a first gain region of which is provided in one direction and a second gain region is provided in another direction different from the one direction. At least a portion of an end surface of the first gain region and the second gain region overlap with each other. Light emitted from the end surface of the first gain region is reflected by the reflective part, and propagates in the same direction or in the focusing direction with light emitted from the end surface of the second gain region.

Abstract: A light emitting device includes an active layer; at least a portion of the active layer constitutes a gain region. The gain region is continuous from a first end surface and a second end surface. The gain region includes a first portion extending from the first end surface to a first reflective surface in a direction tilted with respect to a normal to the first side surface as viewed two-dimensionally; a second portion extending from the second end surface to the second reflective surface in a direction tilted with respect to a normal to the first side surface as viewed two-dimensionally; and a third portion extending from the first reflective surface to the second reflective surface in a direction tilted with respect to a normal to the first reflective surface as viewed two-dimensionally.

Abstract: A light-emitting device includes a first layer, a second layer, and a semiconductor body interposed between the first and second layers, wherein the semiconductor body has a first fine-wall-shape member, a second fine-wall-shape member, and a semiconductor member interposed between the first and second fine-wall-shape members, the first and second fine-wall-shape members have a third layer, a fourth layer, and a fifth layer interposed between the third and fourth layers, the fifth layer is a layer that generates light and guides the light, the third and fourth layers are layers that guide the light generated in the fifth layer, the first and second layers are layers that suppress leakage of the light generated in the fifth layer, and the propagating direction of the light generated in the fifth layer intersects with the first and second fine-wall-shape members.

Abstract: A light emitting device includes an active layer; at least a portion of the active layer constitutes a gain region. The gain region is continuous from a first end surface and a second end surface. The gain region has a first reflective surface and a second reflective surface for reflecting light generated by the gain region. The first reflective surface and second reflective surface extend from the first end surface to the second end surface.

Abstract: A light-emitting device includes a first layer, a second layer, and a semiconductor body interposed between the first and second layers, wherein the semiconductor body has a first fine-wall-shape member, a second fine-wall-shape member, and a semiconductor member interposed between the first and second fine-wall-shape members, the first and second fine-wall-shape members have a third layer, a fourth layer, and a fifth layer interposed between the third and fourth layers, the fifth layer is a layer that generates light and guides the light, the third and fourth layers are layers that guide the light generated in the fifth layer, and the first and second layers are layers that suppress leakage of the light generated in the fifth layer.

Abstract: A light-emitting device includes a first layer, a second layer, and a semiconductor body interposed between the first and second layers, wherein the semiconductor body has a first fine-wall-shape member, a second fine-wall-shape member, and a semiconductor member interposed between the first and second fine-wall-shape members, the first and second fine-wall-shape members have a third layer, a fourth layer, and a fifth layer interposed between the third and fourth layers, the fifth layer is a layer that generates light and guides the light, the third and fourth layers are layers that guide the light generated in the fifth layer, and the first and second layers are layers that suppress leakage of the light generated in the fifth layer.

Abstract: A projector includes: at least one light emitting device having a light emitting element adapted to emit a first outgoing light and a second outgoing light proceeding in a direction different from a direction of the first outgoing light; a first light modulation device adapted to modulate the first outgoing light in accordance with image information; a second light modulation device adapted to modulate the second outgoing light in accordance with image information; and a projection device adapted to project the light modulated by the first light modulation device and the light modulated by the second light modulation device, wherein the light emitting element is a super luminescent diode provided with a stacked structure having an active layer sandwiched between a first cladding layer and a second cladding layer, and the active layer has a first emission surface adapted to emit the first outgoing light and a second emission surface adapted to emit the second outgoing light.

Abstract: A surface-emitting type semiconductor laser includes: a lower mirror; an active layer formed above the lower mirror; an upper mirror formed above the active layer; and a lens section formed above the upper mirror, wherein n1>n, where ? is a design wavelength, n1 is a refractive index of a topmost layer of the upper mirror with respect to light of the design wavelength, and n is a refractive index of the lens section with respect to light of the design wavelength, the lens section has a thickness of ?/2n at an anti-node of the zeroth order resonance mode component among light resonating in the active layer, and the lens section has a thickness of ?/4n at at least a portion of an anti-node of the first order resonance mode component among the light resonating in the active layer.

Abstract: A light emitting device includes: a single crystal substrate having a plane tilted from a low-index plane and first and second cladding layers sandwiching an active layer, wherein the active layer includes first and second parallel side surfaces, part of the active layer constitutes first and second gain regions, a first side surface reflectance is higher than a second side surface reflectance, each of the first and second gain regions is disposed from a first side surface end surface to a second side surface end surface, the first gain region end surface partially overlaps the second gain region end surface so the end surfaces do not overlap each other in the first and second gain regions, a perpendicular of the first side surface is parallel to an off-direction of the substrate, and the first and second gain regions have equal lengths.

Abstract: A light source apparatus includes: a light emitter; a pair of electrodes for driving the light emitter; and an external resonant cavity that reflects part of the light emitted from a light-exiting end surface of the light emitter. The light emitter includes an active layer that generates light, an internal resonant cavity, and a diffractive optical layer that diffracts light having a predetermined wavelength. The external resonant cavity includes an external mirror that reflects the light having the predetermined wavelength. The internal resonant cavity, the external resonant cavity, and the diffractive optical layer form a laser resonant cavity that allows the light generated in the active layer to achieve laser oscillation.

Abstract: A light emitting device includes first and second cladding layers and an active layer therebetween including first and second side surfaces and first and second gain regions, a second side reflectance is higher than a first side reflectance, a first end surface part of the first gain region overlaps a second end surface part of the second gain region in an overlapping plane, the first gain region obliquely extends from the first end surface to a third end surface, the second gain region obliquely extends from the second end surface to a fourth end surface, a first center line connecting the centers of the first and third end surfaces and a second center line connecting the centers of the second and fourth end surfaces intersect, and the overlapping plane is shifted from the intersection point toward the first side surface.

Abstract: A light emitting device includes a first cladding layer, an active layer formed above the first cladding layer, and a second cladding layer formed above the active layer. At least a portion of the active layer constitutes a gain region. The gain region is continuous from a first end surface provided to a first side surface of the active layer to a second end surface provided to the first side surface. The gain region has a first reflective surface and a second reflective surface for reflecting light generated by the gain region. The first reflective surface and second reflective surface extend from the first end surface to the second end surface.

Abstract: A device includes a semiconductor layer including first and second cladding layers sandwiching an active layer, a groove electrically separates receiving and emitting areas, an active layer part forms a continuous region between first and second end surfaces on a first side of the active layer, the gain region has a reflection surface between the first and second end surfaces reflecting gain region generated light, a first gain region portion extending from the first end surface and a second gain region portion extending from the second end surface are tilted, some light from the first portion is reflected to be emitted from the second end surface, some light from the second portion is reflected to be emitted from the first end surface, and some light transmits through a mirror portion of the reflection surface and is received in the receiving area.

Abstract: A light emitting device includes a support part, a first cladding layer formed above the support part, an active layer formed above the first cladding layer, a second cladding layer formed above the active layer, and a reflective part formed above the support part and separated from the active layer. At least a portion of the active layer constitutes a plurality of gain regions. Each of the plurality of gain regions is provided at an angle with respect to a line normal to a first lateral surface of the active layer, from the first lateral surface to a second lateral surface of the active layer that is parallel to the first lateral surface. The plurality of gain regions forms at least one gain region pair. A first gain region that is one of the gain region pair is provided in one direction. A second gain region that is the other of the gain region pair is provided in another direction different from the one direction.

Abstract: A method for manufacturing an optical element having a surface-emitting type semiconductor laser and a photodetector element that detects light emitted from the surface-emitting type semiconductor laser, the method including the steps of: (a) laminating, above a substrate, semiconductor layers for forming a first mirror, an active layer, a second mirror, a photoabsorption layer, an etching stopper layer and a contact layer; (b) patterning the semiconductor layers to form at least a photoabsorption layer, an etching stopper layer and a contact layer; (c) forming an electrode above the contact layer; and (d) etching a portion of the contact layer until an upper surface of the etching stopper layer is exposed.

Abstract: A surface-emitting type semiconductor laser includes: a lower mirror; an active layer formed above the lower mirror; and an upper mirror formed above the active layer, wherein the upper mirror includes a first region in which a plurality of holes are formed and a second region inside the first region in which no hole is formed, the second region is in a circular shape as viewed in a plan view, the circular shape has a radius with which an energy increasing rate in the active layer becomes positive with a lower-order mode and (becomes) negative with a higher-order mode, and the holes have a depth with which the energy increasing rate becomes positive with the lower-order mode, and becomes negative with the higher-order mode.

Abstract: A surface-emitting type semiconductor laser includes: a lower mirror; an active layer formed above the lower mirror; an upper mirror formed above the active layer; and a lens section formed above the upper mirror, wherein n1>n, where ? is a design wavelength, n1 is a refractive index of a topmost layer of the upper mirror with respect to light of the design wavelength, and n is a refractive index of the lens section with respect to light of the design wavelength, the lens section has a thickness of ?/2n at an anti-node of the zeroth order resonance mode component among light resonating in the active layer, and the lens section has a thickness of ?/4n at at least a portion of an anti-node of the first order resonance mode component among the light resonating in the active layer.

Abstract: A surface-emitting type semiconductor laser includes: a lower mirror; an active layer formed above the lower mirror; an upper mirror formed above the active layer; and a lens section formed above the upper mirror, wherein n1>n, where ? is a design wavelength, n1 is a refractive index of a topmost layer of the upper mirror with respect to light of the design wavelength, and n is a refractive index of the lens section with respect to light of the design wavelength, the lens section has a thickness of ?/2n at an anti-node of the zeroth order resonance mode component among light resonating in the active layer, and the lens section has a thickness of ?/4n at at least a portion of an anti-node of the first order resonance mode component among the light resonating in the active layer.