Abstract: A pattern forming material includes a binary copolymer represented by the following general formula or a ternary or higher copolymer obtained by further polymerizing the binary copolymer with another group: ##STR1## wherein R.sub.1 indicates a hydrogen atom or an alkyl group; R.sub.2 and R.sub.3 independently indicate a hydrogen atom, an alkyl group, a phenyl group or an alkenyl group or together indicate a cyclic alkyl group, a cyclic alkenyl group, a cyclic alkyl group having a phenyl group or a cyclic alkenyl group having a phenyl group; R.sub.4 indicates a hydrogen atom or an alkyl group; x satisfies a relationship of 0<x<1; and y satisfies a relationship of 0<y<1.

Abstract: The pattern forming material of the present invention includes a polymer having a group which generates an acid when the polymer is irradiated with an energy beam or heated and a compound which generates a base when the compound is irradiated with an energy beam. The polymer is a binary polymer or a polymer of a higher degree obtained by polymerizing another group with a compound represented by the following general formula: ##STR1## where R.sub.1 indicates a hydrogen atom or an alkyl group, and R.sub.2 and R.sub.3 independently indicate a hydrogen atom, an alkyl group, a phenyl group or an alkenyl group, or together indicate a cyclic alkyl group, a cyclic alkenyl group, a cyclic alkyl group having a phenyl group or a cyclic alkenyl group having a phenyl group.

Abstract: A pattern forming material includes a binary copolymer represented by the following general formula or a ternary or higher copolymer obtained by further polymerizing the binary copolymer with another group: ##STR1## wherein R.sub.1 indicates a hydrogen atom or an alkyl group; R.sub.2 and R.sub.3 independently indicate a hydrogen atom, an alkyl group, a phenyl group or an alkenyl group or together indicate a cyclic alkyl group, a cyclic alkenyl group, a cyclic alkyl group having a phenyl group or a cyclic alkenyl group having a phenyl group; R.sub.4 indicates a hydrogen atom or an alkyl group; x satisfies a relationship of 0<x<1; and y satisfies a relationship of 0<y<1.

Abstract: A patterning material includes a polymer represented by a general formula: ##STR1## wherein R.sub.1 indicates a hydrogen atom or an alkyl group; R.sub.2 indicates a hydrophobic protecting group which is easily desorbed through a function of an acid; R.sub.3 indicates a hydrogen atom or an alkyl group; R.sub.4 and R.sub.5 independently indicate a hydrogen atom, an alkyl group, a phenyl group or an alkenyl group, or together indicate a cyclic alkyl group, a cyclic alkenyl group or a cyclic alkyl or alkenyl group having a phenyl group; x satisfies a relationship of 0<x<1; and y satisfies a relationship of 0<y<1.

Abstract: A method for forming a resist pattern which comprises irradiating an active light ray to a resist obtained by coating a photosensitive resin composition containing a compound capable of generating an acid due to irradiation of the active light ray and a silyloxy compound in a binder resin on a substrate through a pattern mask to decompose the silyloxy compound due to the acid generated at the irradiation region to form a silanol compound, and after removing the silanol compound, removing a film at the photosensitive region due to an oxygen plasma, a removal of said silanol compound being conducted by bringing the film after irradiation of the active light ray into contact with volatile organic solvent vapor having a boiling photosensitive composition.

Abstract: A method for forming a resist pattern comprising applying onto a base plate a resinous composition comprising a compound capable of generating an acid when irradiated with actinic rays to obtain a photosensitive layer, exposing the thus formed layer through a pattern mask to actinic rays, applying onto the whole surface of the layer an alkoxysilane gas and subjecting the thus treated layer to dry etching to remove unexposed area of said layer. By the adoption of the present method, a very fine resist pattern which is useful for the preparation of semiconductor element, magnetic bubble memory element and the like, can be easily and economically prepared.

Abstract: A novel positive type photosensitive resinous composition comprising a base resin having in at least one side chain or at an end portion of its main chain, an iminosulfonate group of the formula: ##STR1## in which R.sub.1 and R.sub.2 are the same or different groups and each represents hydrogen atom, alkyl, acyl, phenyl, naphthyl, anthryl or benzyl group and R.sub.1 and R.sub.2, taken together with the carbon atom, may be an alicyclic ring, the composition further comprising a group containing an acid-decomposable bond, the content of said iminosulfonate group being 1.times.10.sup.-5 to 3.times.10.sup.-3 equivalent/g of the base resin. The present composition, when irradiated with radiation with 200 to 400 nm wavelength, can generate strong sulfonic acid groups, and is specifically useful as a photoresist for a circuit board, integrated circuit and the like.

Abstract: A positive type photosensitive resinous composition which is specifically useful in a photoresist for printed circuit board, integrated circuit board and the like and in a lithographic plate is provided.The resinous composition is characterized by comprising a resin having in its side chains or at the end portions of main chain at least one iminosulfonate group of the formula: ##STR1## in which R.sub.1 and R.sub.2 each is selected from hydrogen atom, an alkyl, an acyl, a phenyl, a naphthyl, an anthryl and a benzyl group, or R.sub.1 and R.sub.2 may, taken together, form an alicyclic ring, the iminosulfonate content being 1.5.times.10.sup.-4 to 2.5.times.10.sup.-3 equivalent/g and the resin being free from glycidyl group or the like which may cause polymerization in the presence of sulfonic acid.