Abstract: An electronic device having an intermediate layer which can transfer smoothly carriers between two layers adjacent to the intermediate layer and having improved properties, and electronic equipment having high reliability are provided. An electronic device includes a pair of electrodes and laminated layers provided between the electrodes. The laminated layers include a hole transport layer (first organic semiconductor layer), a light emitting layer (second organic semiconductor layer), and an intermediate layer provided between the first and second organic semiconductor layers so as to make contact with both of the hole transport layer and the light emitting layer. The intermediate layer is constituted of a compound represented by a general formula A1-B-A2.

Abstract: A substrate for an electronic device having high carrier transport ability, a method for manufacturing a substrate for an electronic device which can manufacture such a substrate for an electronic device, an electronic device provided with the substrate for an electronic device and having improved properties, and electronic equipment having high reliability are provided. A substrate for an electronic device includes a light emitting layer (organic semiconductor layer), a cathode (inorganic layer), and an intermediate layer provided between the light emitting layer and the cathode so as to make contact with both of the light emitting layer and the cathode. The intermediate layer is constituted of a compound (1) represented by a general formula R—X—O-M as a main component thereof. In the general formula, the R is a hydrocarbon group, the X is any one of binding groups comprising a single bond, a carbonyl group and a sulfonyl group, and the M is any one of a hydrogen atom and a metal atom.

Abstract: A light emitting device includes a cathode, an anode, a light emitting layer provided between the cathode and the anode, an intermediate layer provided between the cathode and the light emitting layer so as to be in contact with both the cathode and the light emitting layer. The intermediate layer includes a base in the form of a layer, the base being constituted of a metal oxide based semiconductor material as a main component thereof and having a first surface which is in contact with the light emitting layer and a second surface opposite to the first surface, and a dye carried on the first surface of the base and inner surfaces of pores formed in the base so as to be in contact with the light emitting layer. By using the light emitting device mentioned above, it is possible to improve properties of the light emitting device such as luminous efficiency and the like. A method for manufacturing such a light emitting device is also provided.

Abstract: A gate insulating film 3 is formed of an insulative inorganic material containing silicon and oxygen as a main material. The gate insulating film 3 contains hydrogen atoms. A part of the absorbance of infrared radiation of which wave number is in the range of 830 to 900 cm?1 is less than both the absorbance of infrared radiation at the wave number of 830 cm?1 and the absorbance of infrared radiation at the wave number of 900 cm?1 when the insulating film to which an electric field has never been applied is measured by means of Fourier Transform Infrared Spectroscopy at room temperature.

Abstract: A method for manufacturing a semiconductor device includes forming a SiGe layer on a Si substrate, forming a dummy pattern to expose a surface of the Si substrate, and wet etching the SiGe layer while an etchant is contacted with, the dummy pattern.

Abstract: The present invention provides a method for manufacturing an optical fiber comprising the steps of forming a glass body containing a core, preparing a glass tube which will form a cladding portion, inserting the glass body into the glass tube, and collapsing the glass tube with the glass body by heating, wherein the method comprises a step of processing the glass tube such that it has at least one end tapered to which a pull is to be applied. The method may further comprise the steps of cleaning the outer surface of the glass tube, choosing the outer diameter of the glass body and the inner diameter of the glass tube such that the difference between the two diameters is not lower than 1.0 mm but not higher than 10.

Abstract: An semiconductor device (1) of the invention includes a semiconductor substrate provided with a channel region (21), a source region (22) and a drain region (23), a gate insulating film (3) laminated on the channel region (21), and a gate electrode (5). The gate insulating film (3) is formed of an insulative inorganic material as a main material, and further contains hydrogen. The absorbance of infrared radiation of which wave number is in the range of 3200 to 3500 cm?1 is 0.02 or less when the gate insulating film (3) to which an electric field has never been applied is measured with Fourier Transform Infrared Spectroscopy at room temperature.

Abstract: A conductive polymer having a high carrier transport ability, a conductive layer formed using the conductive polymer, an electronic device provided with the conductive layer having a high reliability, and electronic equipment provided with such an electronic device are provided. The conductive polymer includes a linear main chain, a plurality of carrier transport structures which contribute to carrier transport and each of which is represented by the following formula (1), and a linking structure which branches off from the main chain to link each of the carrier transport structures to the main chain: General Formula (1) where each R1 independently represents a hydrogen atom, a methyl group or an ethyl group, and the R1s are the same or different.

Abstract: A light emitting device includes a cathode, an anode, a light emitting layer provided between the cathode and the anode, an intermediate layer provided between the cathode and the light emitting layer so as to be in contact with both the cathode and the light emitting layer. The intermediate layer includes a base in the form of a layer, the base being constituted of a metal oxide based semiconductor material as a main component thereof and having a first surface which is in contact with the light emitting layer and a second surface opposite to the first surface, and a dye carried on the first surface of the base and inner surfaces of pores formed in the base so as to be in contact with the light emitting layer. By using the light emitting device mentioned above, it is possible to improve properties of the light emitting device such as luminous efficiency and the like. A method for manufacturing such a light emitting device is also provided.

Abstract: A substrate for an electronic device having high carrier transport ability, a method for manufacturing a substrate for an electronic device which can manufacture such a substrate for an electronic device, an electronic device provided with the substrate for an electronic device and having improved properties, and electronic equipment having high reliability are provided. A substrate for an electronic device includes a light emitting layer (organic semiconductor layer), a cathode (inorganic layer), and an intermediate layer provided between the light emitting layer and the cathode so as to make contact with both of the light emitting layer and the cathode. The intermediate layer is constituted of a compound (1) represented by a general formula R—X—O-M as a main component thereof. In the general formula, the R is a hydrocarbon group, the X is any one of binding groups comprising a single bond, a carbonyl group and a sulfonyl group, and the M is any one of a hydrogen atom and a metal atom.

Abstract: An electronic device having an intermediate layer which can transfer smoothly carriers between two layers adjacent to the intermediate layer and having improved properties, and electronic equipment having high reliability are provided. An electronic device includes a pair of electrodes and laminated layers provided between the electrodes. The laminated layers include a hole transport layer (first organic semiconductor layer), a light emitting layer (second organic semiconductor layer), and an intermediate layer provided between the first and second organic semiconductor layers so as to make contact with both of the hole transport layer and the light emitting layer. The intermediate layer is constituted of a compound represented by a general formula A1-B-A2.

Abstract: A gate insulating film 3 is formed of an insulative inorganic material containing silicon and oxygen as a main material. The gate insulating film 3 contains hydrogen atoms. A part of the absorbance of infrared radiation of which wave number is in the range of 830 to 900 cm?1 is less than both the absorbance of infrared radiation at the wave number of 830 cm?1 and the absorbance of infrared radiation at the wave number of 900 cm?1 when the insulating film to which an electric field has never been applied is measured by means of Fourier Transform Infrared Spectroscopy at room temperature.

Abstract: An organic EL device with a voltage applied across an anode and a cathode so that holes are moved in a hole transport layer and electrons are moved in an electron transport layer, and the holes and the electrons are recombined in a light emitting layer to emit light. The light emitting layer is formed of light emitting material having one or more kinds of metallic impurities. By using such a light emitting material, the decrease of light-emission luminance of the organic EL device can be suppressed.

Abstract: A method for manufacturing a semiconductor device includes forming a SiGe layer on a Si substrate, forming a dummy pattern to expose a surface of the Si substrate, and wet etching the SiGe layer while an etchant is contacted with, the dummy pattern.

Abstract: A gate insulating film 3 is formed of an insulative inorganic material containing silicon and oxygen as a main material. The gate insulating film 3 contains hydrogen atoms. A part of the absorbance of infrared radiation of which wave number is in the range of 830 to 900 cm?1 is less than both the absorbance of infrared radiation at the wave number of 830 cm?1 and the absorbance of infrared radiation at the wave number of 900 cm?1 when the insulating film to which an electric field has never been applied is measured by means of Fourier Transform Infrared Spectroscopy at room temperature.

Abstract: An semiconductor device (1) of the invention includes a semiconductor substrate provided with a channel region (21), a source region (22) and a drain region (23), a gate insulating film (3) laminated on the channel region (21), and a gate electrode (5). The gate insulating film (3) is formed of an insulative inorganic material as a main material, and further contains hydrogen. The absorbance of infrared radiation of which wave number is in the range of 3200 to 3500 cm?1 is 0.02 or less when the gate insulating film (3) to which an electric field has never been applied is measured with Fourier Transform Infrared Spectroscopy at room temperature.

Abstract: Techniques for predicting the behavior of dopant and defect components in a substrate lattice formed from a substrate material can be implemented in hardware or software. Fundamental data for a set of microscopic processes that can occur during one or more material processing operations is obtained. Such data can include data representing the kinetics of processes in the set of microscopic processes and the energetics and structure of possible states in the material processing operations. From the fundamental data and a set of external conditions, distributions of dopant and defect components in the substrate lattice are predicted.

Abstract: A method of manufacturing an optical fiber, characterized by comprising the steps of forming a glass body having a core, forming a glass tube constituting a clad portion, inserting the glass body into the glass tube, forming the glass body integrally with the glass tube, finishing at least the extraction side end part of the glass tube in a tapered shape and washing the outer surface of the glass tube, characterized in that a difference between the outer diameter of the glass body and the inner diameter of the glass tube is 1.0 to 10.0 mm, and the inner diameter of a support tube fitted to one end of the glass tube is increased more than that of the glass tube or the extraction side end part of the glass tube is sealed with a tapered part provided at least on the inner surface thereof and a spacer is installed so that a clearance between the outer diameter of the glass body and the inner diameter of the glass tube becomes generally constant in the longitudinal direction.

Abstract: In an organic EL device, when a voltage is applied across an anode and a cathode, holes are moved in a hole transport layer and electrons are moved in an electron transport layer, and the holes and the electrons are recombined in a light emitting layer. In the light emitting layer, excitons are produced by energy released upon the recombination, and the excitons release energy in the form of fluorescence or phosphorescence or emit light when returning to the ground state. The hole transport material is used in the hole transport layer, in which the amount of cationic impurities and/or the amount of anionic impurities are controlled to be small, so that the decrease of light-emission luminance of the organic EL device is suppressed and excellent light emitting properties are maintained for a long period of time.

Abstract: Techniques for predicting the behavior of dopant and defect components in a substrate lattice formed from a substrate material can be implemented in hardware or software. Fundamental data for a set of microscopic processes that can occur during one or more material processing operations is obtained. Such data can include data representing the kinetics of processes in the set of microscopic processes and the energetics and structure of possible states in the material processing operations. From the fundamental data and a set of external conditions, distributions of dopant and defect components in the substrate lattice are predicted.