Patents by Inventor Masamori Iida

Masamori Iida has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Electrode for electrolysis and electrolytic cell using the electrode
    Patent number: 5900127
    Abstract: An electrode for electrolysis comprising an electrode base material and an electrode substance having an electrically conductive diamond structure covering the surface of the electrode base material. The electrode substance having an electrically conductive diamond structure may be a diamond containing an impurity selected from boron, phosphorus and graphite. Alternatively, the electrode substance having an electrically conductive diamond structure may comprise a composite of a diamond and an electrically conductive material. In a preferred embodiment, the electrode further comprises an interlayer comprising at least one of the carbide of a valve metal and silicon carbide disposed between the electrode base material and the electrode substance having an electrically conductive diamond structure. Also disclosed is an electrolytic cell having two chambers including an anode chamber and a cathode chamber partitioned by an ion-exchange membrane.
    Type: Grant
    Filed: April 2, 1997
    Date of Patent: May 4, 1999
    Assignee: Permelec Electrode Ltd.
    Inventors: Masamori Iida, Yoshinori Nishiki, Takayuki Shimamune, Setsuro Ogata, Masashi Tanaka, Shuhei Wakita, Shun Takahashi
  • Diamond n-type semiconductor diamond p-n junction diode
    Patent number: 5223721
    Abstract: A diamond n-type semiconductor including a substrate and a phosphorus element-doped diamond thin film disposed on the substrate. The diamond thin film is deposited by vaporizing a solution comprising a liquid organic compound as the diamond material with diphosphorus pentoxide (P.sub.2 O.sub.5) dissolved therein, and subjecting the resultant gas to a hot filament CVD method.
    Type: Grant
    Filed: February 7, 1992
    Date of Patent: June 29, 1993
    Assignee: The Tokai University Juridical Foundation
    Inventors: Masamori Iida, Tateki Kurosu, Ken Okano
  • Method of making diamond N-type semiconductor diamond p-n junction diode using diphosphorus pentoxide and hot filament CVD method
    Patent number: 5112775
    Abstract: A diamond n-type semiconductor including a substrate and a phosphorus element-doped diamond thin film disposed on the substrate. The diamond thin film is deposited by vaporizing a solution comprising a liquid organic compound as the diamond material with diphosphorus pentoxide (P.sub.2 O.sub.5) dissolved therein, and subjecting the resultant gas to a hot filament CVD method.
    Type: Grant
    Filed: November 7, 1990
    Date of Patent: May 12, 1992
    Assignee: The Tokai University Juridical Foundation
    Inventors: Masamori Iida, Tateki Kurosu, Ken Okano