Abstract: Provided is a joint structure. The joint structure includes a first structure, and a second structure joined to the first structure via a joint portion formed of a Au—Sn-based alloy, wherein a thickness of the joint portion is 3 ?m or more and 50 ?m or less.

Abstract: The present invention can give a joining structure using metal nanoparticles to join the same types or different types of metal where when one surface metal is Al based, the parts are joined through a joining layer containing Ni nanoparticles, whereby a good joining strength is obtained. Further, by using two joining layers (6, 8) including metal nanoparticles to sandwich metal foil (7) so as to form a joining layer and joining the same type or different types of surface metals (3-4) through this joining layer, it is possible to ease the thermal stress due to the difference in amounts of thermal expansion of joined members which have two surface metals.

Abstract: A metal foil including: a steel layer whose thickness is 10 to 200 ?m; an Al-containing metal layer arranged on the steel layer; and plural granular alloys which exist in an interface between the steel layer and the Al-containing metal layer, wherein, when a cutting-plane line of a surface of the Al-containing metal layer is defined as a contour curve and an approximation straight line of the contour curve is defined as a contour average straight line, a maximum point, whose distance from the contour average straight line is more than 10 ?m, is absent on the contour curve, and wherein, when an equivalent sphere diameter of the granular alloys is x in units of ?m and a thickness of the Al-containing metal layer is T in units of ?m, the granular alloys satisfy x?0.5T.

Abstract: The present invention can give a joining structure using metal nanoparticles to join the same types or different types of metal where when one surface metal is Al based, the parts are joined through a joining layer containing Ni nanoparticles, whereby a good joining strength is obtained. Further, by using two joining layers (6, 8) including metal nanoparticles to sandwich metal foil (7) so as to form a joining layer and joining the same type or different types of surface metals (3-4) through this joining layer, it is possible to ease the thermal stress due to the difference in amounts of thermal expansion of joined members which have two surface metals.

Abstract: A metal tape material contains a metal having face centered cubic lattice structure, in which metal tape material an area fraction A1 of a preferentially <100>oriented region are within an orientation difference of 15° C. relative to a thickness direction of the metal tape material and further within an orientation difference of 15° C. relative to a first in-plane direction of the metal tape material is 60% or greater and not greater than 100%, and, where an area fraction of a preferentially <212>oriented region are within an orientation difference of 15° relative to the thickness direction and further within an orientation difference of 15° relative to the first in-plane direction is defined as A2, the total of the area fraction of the preferentially <212>oriented region and the area fraction of the preferentially <100>oriented region, A1+A2, is greater than 70% and not greater than 100%.

Abstract: A solder ball which suppresses generation of voids in a joint, excels in a thermal fatigue property, and can also obtain a good drop impact resistance property, and an electronic member using the same are provided. The solder ball is formed of a Sn—Bi type alloy containing Sn as a main element, 0.3 to 2.0 mass % of Cu, 0.01 to 0.2 mass % of Ni, and 0.1 to 3.0 mass % of Bi, and an intermetallic compound of (Cu, Ni)6Sn5 is formed in the Sn—Bi alloy so that the generation of voids in the joint when being jointed to an electrode is suppressed, a thermal fatigue property is excellent, and a good drop impact resistance property can also be obtained.

Abstract: A metal foil including: a steel layer whose thickness is 10 to 200 ?m; an alloy layer which contains Fe and Al and which is formed on the steel layer; and an Al-containing metal layer arranged on the alloy layer, wherein, when a cutting-plane line of a surface of the Al-containing metal layer is defined as a contour curve and an approximation straight line of the contour curve is defined as a contour average straight line, a maximum point, whose distance from the contour average straight line is more than 10 ?m, is absent on the contour curve, and a thickness of the alloy layer is 0.1 to 8 ?m and the alloy layer contains an Al7Cu2Fe intermetallic compound or FeAl3 based intermetallic compounds.

Abstract: A solder ball which suppresses generation of voids in a joint, excels in a thermal fatigue property, and can also obtain a good drop impact resistance property, and an electronic member using the same are provided. The solder ball is formed of a Sn—Bi type alloy containing Sn as a main element, 0.3 to 2.0 mass % of Cu, 0.01 to 0.2 mass % of Ni, and 0.1 to 3.0 mass % of Bi, and an intermetallic compound of (Cu, Ni)6Sn5 is formed in the Sn—Bi alloy so that the generation of voids in the joint when being jointed to an electrode is suppressed, a thermal fatigue property is excellent, and a good drop impact resistance property can also be obtained.

Abstract: A flexible substrate has heat resistance to endure the high temperature such as sintering of a photovoltaic conversion layer of a compound-type thin film solar cell, can prevent permeation and/or diffusion of metal into the photovoltaic conversion layer, and can be used for many applications. The polyimide layer-containing flexible substrate has a metal substrate of metal foil made of ordinary steel or stainless steel having a coefficient of thermal expansion in a plane direction of not more than 15 ppm/K, or a metal substrate of metal foil made of that ordinary steel or stainless steel on the surface of which a metal layer comprising one of copper, nickel, zinc, or aluminum or an alloy layer of the same is provided, over which a polyimide layer having a layer thickness of 1.5 to 100 ?m and a glass transition point temperature of 300 to 450° C. is formed.

Abstract: The present invention relates to a solder ball for semiconductor packaging and an electronic member having such solder ball. Specifically there are provided: a solder ball capable of ensuring a sufficient thermal fatigue property even when a diameter thereof is not larger than 250 ?m as observed in recent years; and an electronic member having such solder ball. More specifically, there are provided: a solder ball for semiconductor packaging that is made of a solder alloy containing Sn as a main element, 0.1-2.5% Ag by mass, 0.1-1.5% Cu by mass and at least one of Mg, Al and Zn in a total amount of 0.0001-0.005% by mass, such solder ball having a surface including a noncrystalline phase that has a thickness of 1-50 nm and contains at least one of Mg, Al and Zn, O and Sn, and an electronic member having such solder ball.

Abstract: According to a lead-free solder bump bonding structure, by causing the interface (IMC interface) of the intermetallic compound layer at a lead-free-solder-bump side to have scallop shapes of equal to or less than 0.02 [portions/?m] without forming in advance an Ni layer as a barrier layer on the surfaces of respective Cu electrodes of first and second electronic components like conventional technologies, a Cu diffusion can be inhibited, thereby inhibiting an occurrence of an electromigration. Hence, the burden at the time of manufacturing can be reduced by what corresponds to an omission of the formation process of the Ni layer as a barrier layer on the Cu electrode surfaces, and thus a lead-free solder bump bonding structure can be provided which reduces a burden at the time of manufacturing in comparison with conventional technologies and which can inhibit an occurrence of an electromigration.

Abstract: The purpose of the present invention is to provide an interconnector for solar cells, which reduces the stress acting on a solar cell and suppresses warping and cracking of the solar cell. An interconnector for solar cells of the present invention is characterized by comprising an electrically conductive wire part and a surface layer that is formed on at least one wide surface of the electrically conductive wire part. The interconnector for solar cells is also characterized in that the surface layer has a function of reducing the stress that is caused by the difference between the thermal expansion coefficient of the electrically conductive part and the thermal expansion coefficient of a solar cell, said stress being generated when the interconnector is joined to the solar cell.

Abstract: According to a lead-free solder bump bonding structure, by causing the interface (IMC interface) of the intermetallic compound layer at a lead-free-solder-bump side to have scallop shapes of equal to or less than 0.02 [portions/?m] without forming in advance an Ni layer as a barrier layer on the surfaces of respective Cu electrodes of first and second electronic components like conventional technologies, a Cu diffusion can be inhibited, thereby inhibiting an occurrence of an electromigration. Hence, the burden at the time of manufacturing can be reduced by what corresponds to an omission of the formation process of the Ni layer as a barrier layer on the Cu electrode surfaces, and thus a lead-free solder bump bonding structure can be provided which reduces a burden at the time of manufacturing in comparison with conventional technologies and which can inhibit an occurrence of an electromigration.

Abstract: A lead-free solder alloy exhibiting good performance in impact resistance and vibration resistance. Also provided are a solder ball using such a lead-free solder alloy, and an electronic member having a solder bump using such a lead-free alloy. Specifically, the lead-free solder alloy consists of 1.0 to 2.0% by mass of Ag, 0.3 to 1.0% by mass of Cu, 0.005 to 0.1% by mass of Ni and the balance including Sn and unavoidable impurities. In an Sn—Ag—Cu based solder joint portion on a Cu electrode, a Cu3Sn intermetallic compound layer is formed directly on the Cu electrode, and then a Cu6Sn5 intermetallic compound layer is formed thereon. A Cu atomic site in the Cu6Sn5 intermetallic compound layer is replaced by Ni having a smaller atomic radius than Cu to thereby reduce strain in the Cu6Sn5 intermetallic compound layer, thus enabling impact resistance and vibration resistance to be improved therein.

Abstract: A metal foil including: a steel layer whose thickness is 10 to 200 ?m; an Al-containing metal layer arranged on the steel layer; and plural granular alloys which exist in an interface between the steel layer and the Al-containing metal layer, wherein, when a cutting-plane line of a surface of the Al-containing metal layer is defined as a contour curve and an approximation straight line of the contour curve is defined as a contour average straight line, a maximum point, whose distance from the contour average straight line is more than 10 ?m, is absent on the contour curve, and wherein, when an equivalent sphere diameter of the granular alloys is x in units of ?m and a thickness of the Al-containing metal layer is T in units of ?m, the granular alloys satisfy x?0.5T.

Abstract: A metal foil including: a steel layer whose thickness is 10 to 200 ?m; an alloy layer which contains Fe and Al and which is formed on the steel layer; and an Al-containing metal layer arranged on the alloy layer, wherein, when a cutting-plane line of a surface of the Al-containing metal layer is defined as a contour curve and an approximation straight line of the contour curve is defined as a contour average straight line, a maximum point, whose distance from the contour average straight line is more than 10 ?m, is absent on the contour curve, and a thickness of the alloy layer is 0.1 to 8 ?m and the alloy layer contains an Al7Cu2Fe intermetallic compound or FeAl3 based intermetallic compounds.

Abstract: To provide a solder alloy, a solder ball and an electronic member having a solder bump, used for connection with a mother board or the like, having a melting temperature of less than 250° C. for the solder alloy, achieving high drop impact resistance required in mobile devices or the like. A solder alloy is used which consists of not less than 0.1 mass ppm of boron and not greater than 200 mass ppm of boron and a remainder comprising substantially not less than 40% by mass of Sn, in which its melting temperature is less than 250° C.

Abstract: Provided are a metal tape material improved in characteristics to be low in Young's modulus, low in yield stress and high in break elongation and a metal tape material for semiconductor packaging, such as a current-collection interconnector, comprising the same.

Abstract: The present invention relates to a solder ball for semiconductor packaging and an electronic member having such solder ball. Specifically there are provided: a solder ball capable of ensuring a sufficient thermal fatigue property even when a diameter thereof is not larger than 250 ?m as observed in recent years; and an electronic member having such solder ball. More specifically, there are provided: a solder ball for semiconductor packaging that is made of a solder alloy containing Sn as a main element, 0.1-2.5% Ag by mass, 0.1-1.5% Cu by mass and at least one of Mg, Al and Zn in a total amount of 0.0001-0.005% by mass, such solder ball having a surface including a noncrystalline phase that has a thickness of 1-50 nm and contains at least one of Mg, Al and Zn, O and Sn, and an electronic member having such solder ball.

Abstract: A lead-free solder alloy, a solder ball and an electronic member comprising a solder bump which enable the prevention of the occurrence of yellow discoloration on the surface of a solder after soldering, the surface of a solder bump after the formation of the bump in a BGA, and the surface of a solder bump after a burn-in test of a BGA. Specifically disclosed are: a lead-free solder alloy; a solder ball; and an electronic member comprising a solder bump, containing at least one additive element selected from Li, Na, K, Ca, Be, Mg, Sc, Y, lanthanoid series elements, Ti, Zr, Hf, Nb, Ta, Mo, Zn, Al, Ga, In, Si and Mn in the total amount of 1 ppm by mass to 0.1% by mass inclusive, with the remainder being 40% by mass or more of Sn.