Patents by Inventor Masamune TAKANO

Masamune TAKANO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Processing apparatus
    Patent number: 10332759
    Abstract: A processing apparatus of an embodiment includes a stage that can have a sample placed thereon, a rotation mechanism that rotates the stage, a first nozzle that injects a substance onto the sample, and a second nozzle that supplies fluid to the rotation center of the sample.
    Type: Grant
    Filed: October 29, 2015
    Date of Patent: June 25, 2019
    Assignee: Kabushiki Kaisha Toshiba
    Inventor: Masamune Takano
  • Processing apparatus, nozzle, and dicing apparatus
    Patent number: 9947571
    Abstract: A processing apparatus of an embodiment includes a stage that can have a sample placed thereon, a rotation mechanism that rotates the stage, a nozzle that injects a substance onto the sample, a movement mechanism that moves the stage and the nozzle in a relative manner in a direction perpendicular to the rotation axis of the stage; and a control unit that controls the movement mechanism.
    Type: Grant
    Filed: October 30, 2015
    Date of Patent: April 17, 2018
    Assignee: Kabushiki Kaisha Toshiba
    Inventor: Masamune Takano
  • Semiconductor device and method of manufacturing the same
    Patent number: 9679976
    Abstract: According to one embodiment, a semiconductor device includes a semiconductor substrate in which a recess is provided on a back surface thereof, and a shape of the recess is reflected on a surface of a metal film which is also provided on the back surface of the semiconductor substrate.
    Type: Grant
    Filed: August 2, 2016
    Date of Patent: June 13, 2017
    Assignee: Kabushiki Kaisha Toshiba
    Inventor: Masamune Takano
  • Device manufacturing method of processing cut portions of semiconductor substrate using carbon dioxide particles
    Patent number: 9633903
    Abstract: A device manufacturing method according to an embodiment includes forming a film on the side of a second surface of a substrate having a first surface and the second surface, cutting the substrate, cutting the film, and injecting particles onto at least one of a first cut portion formed by the cutting of the substrate and a second cut portion formed by the cutting of the film, to process the at least one of the first cut portion or the second cut portion.
    Type: Grant
    Filed: October 29, 2015
    Date of Patent: April 25, 2017
    Assignee: Kabushiki Kaisha Toshiba
    Inventor: Masamune Takano
  • Device manufacturing method and device
    Patent number: 9627259
    Abstract: A device manufacturing method according to an embodiment includes forming a film on the second surface side of a substrate having a first surface and the second surface, forming a trench in part of the substrate from the first surface side, while leaving the film to remain, and injecting a substance onto the film from the second surface side, to remove the film at the portion on the second surface side of the trench.
    Type: Grant
    Filed: October 30, 2015
    Date of Patent: April 18, 2017
    Assignee: Kabushiki Kaisha Toshiba
    Inventor: Masamune Takano
  • DEVICE MANUFACTURING METHOD
    Publication number: 20170076982
    Abstract: Provided is a device manufacturing method according to an embodiment including forming a film on a second plane side of a substrate having a first plane and the second plane, forming grooves on the substrate from the first plane side so that the film remains, and performing an ultrasonic process on the substrate in a liquid to remove the film of the second plane side at positions where the grooves are formed.
    Type: Application
    Filed: February 23, 2016
    Publication date: March 16, 2017
    Inventors: Seiya Sakakura, Masamune Takano, Yusaku Asano, Keiichiro Matsuo
  • SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
    Publication number: 20160343812
    Abstract: According to one embodiment, a semiconductor device includes a semiconductor substrate in which a recess is provided on a back surface thereof, and a shape of the recess is reflected on a surface of a metal film which is also provided on the back surface of the semiconductor substrate.
    Type: Application
    Filed: August 2, 2016
    Publication date: November 24, 2016
    Inventor: Masamune TAKANO
  • PROCESSING APPARATUS
    Publication number: 20160300736
    Abstract: A processing apparatus of an embodiment includes a stage that can have a sample placed thereon, a rotation mechanism that rotates the stage, a first nozzle that injects a substance onto the sample, and a second nozzle that supplies fluid to the rotation center of the sample.
    Type: Application
    Filed: October 29, 2015
    Publication date: October 13, 2016
    Inventor: Masamune Takano
  • Semiconductor device and method of manufacturing the same
    Patent number: 9437695
    Abstract: According to one embodiment, a semiconductor device includes a semiconductor substrate in which a recess is provided on a back surface thereof, and a shape of the recess is reflected on a surface of a metal film which is also provided on the back surface of the semiconductor substrate.
    Type: Grant
    Filed: February 8, 2016
    Date of Patent: September 6, 2016
    Assignee: Kabushiki Kaisha Toshiba
    Inventor: Masamune Takano
  • DEVICE MANUFACTURING METHOD
    Publication number: 20160218037
    Abstract: A device manufacturing method according to an embodiment includes forming a film on the side of a second surface of a substrate having a first surface and the second surface, cutting the substrate, cutting the film, and injecting particles onto at least one of a first cut portion formed by the cutting of the substrate and a second cut portion formed by the cutting of the film, to process the at least one of the first cut portion or the second cut portion.
    Type: Application
    Filed: October 29, 2015
    Publication date: July 28, 2016
    Inventor: Masamune Takano
  • SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
    Publication number: 20160155812
    Abstract: According to one embodiment, a semiconductor device includes a semiconductor substrate in which a recess is provided on a back surface thereof, and a shape of the recess is reflected on a surface of a metal film which is also provided on the back surface of the semiconductor substrate.
    Type: Application
    Filed: February 8, 2016
    Publication date: June 2, 2016
    Inventor: Masamune TAKANO
  • DEVICE MANUFACTURING METHOD AND DEVICE
    Publication number: 20160141209
    Abstract: A device manufacturing method according to an embodiment includes forming a film on the second surface side of a substrate having a first surface and the second surface, forming a trench in part of the substrate from the first surface side, while leaving the film to remain, and injecting a substance onto the film from the second surface side, to remove the film at the portion on the second surface side of the trench.
    Type: Application
    Filed: October 30, 2015
    Publication date: May 19, 2016
    Inventor: Masamune Takano
  • PROCESSING APPARATUS, NOZZLE, AND DICING APPARATUS
    Publication number: 20160141200
    Abstract: A processing apparatus of an embodiment includes a stage that can have a sample placed thereon, a rotation mechanism that rotates the stage, a nozzle that injects a substance onto the sample, a movement mechanism that moves the stage and the nozzle in a relative manner in a direction perpendicular to the rotation axis of the stage; and a control unit that controls the movement mechanism.
    Type: Application
    Filed: October 30, 2015
    Publication date: May 19, 2016
    Inventor: Masamune Takano
  • Semiconductor device and method of manufacturing the same
    Patent number: 9263534
    Abstract: According to one embodiment, a semiconductor device includes a semiconductor substrate in which a recess is provided on a back surface thereof, and a shape of the recess is reflected on a surface of a metal film which is also provided on the back surface of the semiconductor substrate.
    Type: Grant
    Filed: February 28, 2014
    Date of Patent: February 16, 2016
    Assignee: Kabushiki Kaisha Toshiba
    Inventor: Masamune Takano
  • SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
    Publication number: 20150069459
    Abstract: According to one embodiment, a semiconductor device includes a semiconductor substrate in which a recess is provided on a back surface thereof, and a shape of the recess is reflected on a surface of a metal film which is also provided on the back surface of the semiconductor substrate.
    Type: Application
    Filed: February 28, 2014
    Publication date: March 12, 2015
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventor: Masamune TAKANO