Abstract: A plurality of magnetosensitive portions of a plurality of magnetic resistance elements and a plurality of magnets are aligned substantially linearly to be perpendicular to a moving direction of a detection object, and directions of magnetic poles of the magnets are alternately inversed, such that directions of magnetic fluxes, which are perpendicular to a surface on which the magnetosensitive portions of the magnetic resistance elements are arranged, of the continuously disposed magnets, are alternately inverse.

Abstract: A plurality of magnetosensitive portions of a plurality of magnetic resistance elements and a plurality of magnets are aligned substantially linearly to be perpendicular to a moving direction of a detection object, and directions of magnetic poles of the magnets are alternately inversed, such that directions of magnetic fluxes, which are perpendicular to a surface on which the magnetosensitive portions of the magnetic resistance elements are arranged, of the continuously disposed magnets, are alternately inverse.

Abstract: An ultrasonic transmitting and receiving apparatus includes a casing, a vibration isolating member, and a piezoelectric element. The casing has a bottom, an inner peripheral wall, and an outer peripheral wall, and these components are integral and define a monolithic structure. The inner peripheral wall and the bottom define a first recess. The outer peripheral wall, the inner peripheral wall, and the bottom define a second recess. The second recess is filled with the vibration isolating member. The piezoelectric element is fixed on the bottom facing the first recess in the casing.

Abstract: A method for manufacturing a semiconductor thin film having high carrier mobility, and a magnetoelectric conversion element provided with the semiconductor thin film manufactured by the aforementioned method are provided. The temperature of the Si single crystal substrate is raised to 270° C. to 320° C., and an In buffer layer is formed by an electron beam heating type vacuum evaporation method. Subsequently, an initial seed layer made of Sb and In is formed. The temperature of the Si single crystal substrate is raised to 460° C. to 480° C., and thereafter, a retention time approximated by a predetermined function of the temperature of the Si single crystal substrate is provided. Then, a main growth layer made of Sb and In is formed.

Abstract: A method for manufacturing a semiconductor thin film having high carrier mobility, and a magnetoelectric conversion element provided with the semiconductor thin film manufactured by the aforementioned method are provided. The temperature of the Si single crystal substrate is raised to 270° C. to 320° C., and an In buffer layer is formed by an electron beam heating type vacuum evaporation method. Subsequently, an initial seed layer made of Sb and In is formed. The temperature of the Si single crystal substrate is raised to 460° C. to 480° C., and thereafter, a retention time approximated by a predetermined function of the temperature of the Si single crystal substrate is provided. Then, a main growth layer made of Sb and In is formed.

Abstract: A method for manufacturing a semiconductor thin film having high carrier mobility, and a magnetoelectric conversion element provided with the semiconductor thin film manufactured by the aforementioned method are provided. The temperature of the Si single crystal substrate is raised to 270° C. to 320° C., and an In buffer layer is formed by an electron beam heating type vacuum evaporation method. Subsequently, an initial seed layer made of Sb and In is formed. The temperature of the Si single crystal substrate is raised to 460° C. to 480° C., and thereafter, a retention time approximated by a predetermined function of the temperature of the Si single crystal substrate is provided. Then, a main growth layer made of Sb and In is formed.

Abstract: A method for manufacturing a semiconductor thin film having high carrier mobility, and a magnetoelectric conversion element provided with the semiconductor thin film manufactured by the aforementioned method are provided. The temperature of the Si single crystal substrate is raised to 270° C. to 320° C., and an In buffer layer is formed by an electron beam heating type vacuum evaporation method. Subsequently, an initial seed layer made of Sb and In is formed. The temperature of the Si single crystal substrate is raised to 460° C. to 480° C., and thereafter, a retention time approximated by a predetermined function of the temperature of the Si single crystal substrate is provided. Then, a main growth layer made of Sb and In is formed.

Abstract: A method for manufacturing a semiconductor thin film having high carrier mobility, and a magnetoelectric conversion element provided with the semiconductor thin film manufactured by the aforementioned method are provided. The temperature of the Si single crystal substrate is raised to 270° C. to 320° C., and an In buffer layer is formed by an electron beam heating type vacuum evaporation method. Subsequently, an initial seed layer made of Sb and In is formed. The temperature of the Si single crystal substrate is raised to 460° C. to 480° C., and thereafter, a retention time approximated by a predetermined function of the temperature of the Si single crystal substrate is provided. Then, a main growth layer made of Sb and In is formed.