Patents by Inventor Masanari Ishizuki

Masanari Ishizuki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11905499
    Abstract: Provided is a high-purity isopropyl alcohol in which the concentration of a C7-12 acetal compound is 100 ppb or less on a mass basis, the concentration of the acetal compound in an accelerated test involving heating for 4 hours at 80° C. in a nitrogen atmosphere is increased by a factor of 30 or less with respect to the value thereof prior to heating, and the concentration of the acetal compound is maintained at a value of 100 ppb or less on a mass basis. Also provided is a method for manufacturing said high-purity isopropyl alcohol.
    Type: Grant
    Filed: September 30, 2019
    Date of Patent: February 20, 2024
    Assignee: TOKUYAMA CORPORATION
    Inventors: Shunsuke Hosaka, Masanari Ishizuki
  • Patent number: 11807836
    Abstract: Provided is a high-purity isopropyl alcohol in which the concentration of a C7-12 acetal compound is 100 ppb or less on a mass basis, the concentration of the acetal compound in an accelerated test involving heating for 4 hours at 80° C. in a nitrogen atmosphere is increased by a factor of 30 or less with respect to the value thereof prior to heating, and the concentration of the acetal compound is maintained at a value of 100 ppb or less on a mass basis. Also provided is a method for manufacturing said high-purity isopropyl alcohol.
    Type: Grant
    Filed: September 30, 2019
    Date of Patent: November 7, 2023
    Assignee: TOKUYAMA CORPORATION
    Inventors: Shunsuke Hosaka, Masanari Ishizuki
  • Patent number: 11560346
    Abstract: A method for producing isopropyl alcohol is provided in which propylene is hydrated directly with water to produce isopropyl alcohol, the method including: a distillation step in which crude isopropyl alcohol is distilled; and a filtration step in which the isopropyl alcohol obtained in the distillation step is filtered through a filter having an ion-exchange group.
    Type: Grant
    Filed: October 3, 2019
    Date of Patent: January 24, 2023
    Assignee: TOKUYAMA CORPORATION
    Inventors: Akira Sera, Masashi Shinagawa, Masanari Ishizuki
  • Publication number: 20220017440
    Abstract: A method for producing isopropyl alcohol is provided in which propylene is hydrated directly with water to produce isopropyl alcohol, the method including: a distillation step in which crude isopropyl alcohol is distilled; and a filtration step in which the isopropyl alcohol obtained in the distillation step is filtered through a filter having an ion-exchange group.
    Type: Application
    Filed: October 3, 2019
    Publication date: January 20, 2022
    Applicant: TOKUYAMA CORPORATION
    Inventors: Akira Sera, Masashi Shinagawa, Masanari Ishizuki
  • Publication number: 20220002641
    Abstract: Provided is a high-purity isopropyl alcohol in which the concentration of a C7-12 acetal compound is 100 ppb or less on a mass basis, the concentration of the acetal compound in an accelerated test involving heating for 4 hours at 80° C. in a nitrogen atmosphere is increased by a factor of 30 or less with respect to the value thereof prior to heating, and the concentration of the acetal compound is maintained at a value of 100 ppb or less on a mass basis. Also provided is a method for manufacturing said high-purity isopropyl alcohol.
    Type: Application
    Filed: September 30, 2019
    Publication date: January 6, 2022
    Applicant: TOKUYAMA CORPORATION
    Inventors: Shunsuke Hosaka, Masanari Ishizuki
  • Publication number: 20110094438
    Abstract: The present invention provides a self-supporting substrate obtained by the steps of: forming an Al-based group-III nitride thin-layer having a thickness in the range of 3-200 nm on a base substrate made of a single crystal of an inorganic substance which substantially does not decompose at 800° C. in an inert gas atmosphere and which does produce volatiles by decomposition when contacting with a reducing gas in a temperature range of 800-1600° C., for example sapphire; forming voids along the interface between the base substrate and the Al-based group-III nitride thin-layer of the obtained laminated substrate by thermally treating the laminated substrate in a temperature range of 800-1600° C. in a reducing gas atmosphere containing ammonia gas; forming a group-III nitride single crystal thick-layer on the Al-based group-III nitride thin-layer; and separating these formed layers.
    Type: Application
    Filed: January 9, 2009
    Publication date: April 28, 2011
    Inventors: Akinori Koukitu, Yoshinao Kumagai, Masanari Ishizuki, Toru Nagashima, Akira Hakomori, Kazuya Takada
  • Publication number: 20110018104
    Abstract: The present invention is a method for producing a laminated body, comprising the steps of: (1) preparing a base substrate having a surface formed of a single crystal which is different from the material constituting the Al-based group-III nitride single crystal layer to be formed; (2) forming an Al-based group-III nitride single crystal layer having a thickness of 10 nm to 1.5 ?m on the single crystal surface of the prepared base substrate; (3) forming on the Al-based group-III nitride single crystal layer a non-single crystal layer being 100 times or more thicker than the Al-based group-III nitride single crystal layer without breaking the previously-obtained Al-based group-III nitride single crystal layer; and (4) removing the base substrate.
    Type: Application
    Filed: December 16, 2008
    Publication date: January 27, 2011
    Inventors: Toru Nagashima, Akira Hakomori, Kazuya Takada, Masanari Ishizuki, Akinori Koukitu, Yoshinao Kumagai