Patents by Inventor Masanobu Baba

Masanobu Baba has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200362439
    Abstract: A TiAl alloy member for hot forging includes a substrate made of TiAl alloy, and an Al layer formed on a surface of the substrate, the Al layer containing Al as a main constituent and containing Ti.
    Type: Application
    Filed: June 17, 2020
    Publication date: November 19, 2020
    Applicant: IHI Corporation
    Inventors: Keiji KUBUSHIRO, Masanobu BABA, Yohei SAKAKIBARA, Yutaro OTA
  • Patent number: 10619644
    Abstract: A coating consists essentially of one or more selected from the group of nitrides of one or more first metals of titanium, zirconium and hafnium beyond 0 at % but less than 100 at % and a balance of silicon, and nitrides of one or more second metals of vanadium, niobium and tantalum.
    Type: Grant
    Filed: April 3, 2017
    Date of Patent: April 14, 2020
    Assignees: IHI Corporation, HITACHI METALS, LTD.
    Inventors: Takahito Araki, Yuta Tanaka, Kazuhiko Kakinuma, Masanobu Baba, Issei Otera, Kana Morishita, Shuho Koseki
  • Patent number: 10533566
    Abstract: When a compressor vane or blade for an engine is used in an environment containing abundant foreign substances, deposits originated from the foreign substances are likely to deposit on surfaces of the vane or blade. The compressor vane or blade according to the present disclosure has a base body of the compressor vane or blade; and a coating covering the base body, which consists essentially of one or more selected from the group of molybdenum disulfide and tungsten disulfide.
    Type: Grant
    Filed: June 28, 2017
    Date of Patent: January 14, 2020
    Assignees: IHI Corporation, HITACHI METALS, LTD.
    Inventors: Takahito Araki, Yuta Tanaka, Kazuhiko Kakinuma, Masanobu Baba, Issei Otera, Kana Morishita, Shuho Koseki
  • Publication number: 20180197874
    Abstract: The semiconductor device includes a base material, a plurality of electrode layers, and a first contact portion. The plurality of electrode layers are provided above the base material and arranged along a first direction. The first contact portion extends through the plurality of electrode layers in the first direction. The plurality of electrode layers include a first electrode layer and a second electrode layer. The second electrode layer is positioned between the base material and the first electrode layer. The first contact portion includes a first conductive portion and a first insulating portion. The first conductive portion extends in the first direction, is electrically connected to the first electrode layer, and is insulated from the second electrode layer. The first insulating portion is provided between the base material and the first conductive portion and extends through the second electrode layer in the first direction.
    Type: Application
    Filed: March 9, 2017
    Publication date: July 12, 2018
    Applicant: Toshiba Memory Corporation
    Inventors: Yusuke OSHIKI, Masanobu Baba
  • Patent number: 9997526
    Abstract: According to one embodiment, a method for manufacturing a semiconductor device is disclosed. The method includes forming a stacked body alternately stacked with a plurality of members and a plurality of intermediate bodies having materials different from materials of the plurality of members, processing an end portion of at least two layers of the plurality of members sequentially in a stacking direction of the stacked body, and forming a step-wise step stacked with the plurality of members and the plurality of intermediate bodies, forming a plurality of side wall films contacting the step and making the end portion of the plurality of members in a step-wise. The making the end portion of the plurality of members in a step-wise includes retreating a portion of the plurality of members, the portion separated from the plurality of side wall films and exposed from the stacked body.
    Type: Grant
    Filed: September 7, 2016
    Date of Patent: June 12, 2018
    Assignee: TOSHIBA MEMORY CORPORATION
    Inventors: Gaku Sudo, Masanobu Baba, Megumi Ishiduki, Tadashi Iguchi, Murato Kawai
  • Patent number: 9947681
    Abstract: According to one embodiment, a method for manufacturing a semiconductor device is disclosed. The method includes forming a stacked body alternately stacked with a plurality of members and a plurality of intermediate bodies having materials different from materials of the plurality of members, processing an end portion of at least two layers of the plurality of members sequentially in a stacking direction of the stacked body, and forming a step-wise step stacked with the plurality of members and the plurality of intermediate bodies, forming a plurality of side wall films contacting the step and making the end portion of the plurality of members in a step-wise. The making the end portion of the plurality of members in a step-wise includes retreating a portion of the plurality of members, the portion separated from the plurality of side wall films and exposed from the stacked body.
    Type: Grant
    Filed: September 7, 2016
    Date of Patent: April 17, 2018
    Assignee: TOSHIBA MEMORY CORPORATION
    Inventors: Gaku Sudo, Masanobu Baba, Megumi Ishiduki, Tadashi Iguchi, Murato Kawai
  • Patent number: 9880464
    Abstract: According to one embodiment, an imprint pattern forming method includes providing a substrate with a pattern formation region and a peripheral region, the peripheral region having a surface lower than a surface of the pattern formation region, located at a periphery of the pattern formation region. The method includes forming an auxiliary pattern with a predetermined height on at least a portion of the peripheral region, providing a resist layer on at least the pattern formation region, and imprinting the resist layer using a template by locating the template in a region which includes a portion of the pattern formation region and a portion of the peripheral region.
    Type: Grant
    Filed: August 26, 2016
    Date of Patent: January 30, 2018
    Assignee: TOSHIBA MEMORY CORPORATION
    Inventors: Daisuke Kawamura, Koji Matsuo, Masanobu Baba, Tatsuro Shinozaki, Taishi Ishikura
  • Publication number: 20170298945
    Abstract: When a compressor vane or blade for an engine is used in an environment containing abundant foreign substances, deposits originated from the foreign substances are likely to deposit on surfaces of the vane or blade. The compressor vane or blade according to the present disclosure has a base body of the compressor vane or blade; and a coating covering the base body, which consists essentially of one or more selected from the group of molybdenum disulfide and tungsten disulfide.
    Type: Application
    Filed: June 28, 2017
    Publication date: October 19, 2017
    Applicants: IHI Corporation, HITACHI METALS, LTD.
    Inventors: Takahito ARAKI, Yuta TANAKA, Kazuhiko KAKINUMA, Masanobu BABA, lssei OTERA, Kana MORISHITA, Shuho KOSEKI
  • Publication number: 20170213840
    Abstract: According to one embodiment, a method for manufacturing a semiconductor device is disclosed. The method includes forming a stacked body alternately stacked with a plurality of members and a plurality of intermediate bodies having materials different from materials of the plurality of members, processing an end portion of at least two layers of the plurality of members sequentially in a stacking direction of the stacked body, and forming a step-wise step stacked with the plurality of members and the plurality of intermediate bodies, forming a plurality of side wall films contacting the step and making the end portion of the plurality of members in a step-wise. The making the end portion of the plurality of members in a step-wise includes retreating a portion of the plurality of members, the portion separated from the plurality of side wall films and exposed from the stacked body.
    Type: Application
    Filed: September 7, 2016
    Publication date: July 27, 2017
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Gaku Sudo, Masanobu Baba, Megumi Ishiduki, Tadashi Iguchi, Murato Kawai
  • Publication number: 20170204871
    Abstract: A coating consists essentially of one or more selected from the group of nitrides of one or more first metals of titanium, zirconium and hafnium beyond 0 at % but less than 100 at % and a balance of silicon, and nitrides of one or more second metals of vanadium, niobium and tantalum.
    Type: Application
    Filed: April 3, 2017
    Publication date: July 20, 2017
    Applicants: IHI Corporation, HITACHI METALS, LTD.
    Inventors: Takahito ARAKI, Yuta TANAKA, Kazuhiko KAKINUMA, Masanobu BABA, lssei OTERA, Kana MORISHITA, Shuho KOSEKI
  • Publication number: 20170184958
    Abstract: According to one embodiment, an imprint pattern forming method includes providing a substrate with a pattern formation region and a peripheral region, the peripheral region having a surface lower than a surface of the pattern formation region, located at a periphery of the pattern formation region. The method includes forming an auxiliary pattern with a predetermined height on at least a portion of the peripheral region, providing a resist layer on at least the pattern formation region, and imprinting the resist layer using a template by locating the template in a region which includes a portion of the pattern formation region and a portion of the peripheral region.
    Type: Application
    Filed: August 26, 2016
    Publication date: June 29, 2017
    Inventors: Daisuke KAWAMURA, Koji MATSUO, Masanobu BABA, Tatsuro SHINOZAKI, Taishi ISHIKURA
  • Patent number: 9513021
    Abstract: The rear side outer peripheral edge of a propeller fan rotated and driven by a motor, of a propeller fan drive unit, is surrounded by a bell mouth. An upper plate, a lower plate, a side plate, and a machine room plate constitute an air duct at the suction side, outside the radial direction of the propeller fan. The cross-section of the bell mouth, at a first position in the vicinity where a blade of the propeller fan is closest, and where the distance between the propeller fan and the plate constituting the air duct outside the radial direction is relatively narrow, is made to be such that an expansion angle ?1 of the bell mouth suction side is made small. The overlapped height Hb of the propeller fan and the bell mouth is made large against a cross-section at a second position where the distance between the propeller fan and a plate is relatively large. The shape of the cross-section of the bell mouth is made to change gradually between the first position and the second position.
    Type: Grant
    Filed: October 29, 2009
    Date of Patent: December 6, 2016
    Assignee: MITSUBISHI ELECTRIC CORPORATION
    Inventors: Yasuaki Kato, Takahide Tadokoro, Masanobu Baba, Hiroyuki Takada
  • Patent number: 9377224
    Abstract: A heat pump apparatus includes a heat source unit that cools or heats a refrigerant, an indoor unit that performs a cooling operation, and a hot water supply unit that performs a hot water supply operation. When there is an operation request for one of the indoor unit and the hot water supply unit, even when there is no operation request for the other, the heat pump apparatus causes both the one and the other to operate if the other satisfies a certain condition so that the hot water supply unit performs a hot water supply operation by utilizing a refrigerant heated by performing a cooling operation in the indoor unit and the indoor unit performs a cooling operation by utilizing a refrigerant cooled by performing a hot water supply operation in the hot water supply unit.
    Type: Grant
    Filed: January 27, 2011
    Date of Patent: June 28, 2016
    Assignee: Mitsubishi Electric Corporation
    Inventors: Shogo Tamaki, Makoto Saito, Masanobu Baba, Ryo Oya
  • Patent number: 8822966
    Abstract: A nonvolatile memory device has a memory cell including a resistance change layer, a first electrode, and a second electrode. The resistance change layer switches between high and low resistance states due to the transfer of metal ions from the first electrode in response to voltages applied between the electrodes. The first electrode is formed on a first side of the resistance change layer, and provides metal ions. The second electrode is formed on a second side of the resistance change layer. A memory cell region is formed between the first electrode and the second electrode with the resistance change layer. The memory device also includes a high permittivity layer with a higher dielectric constant than the resistance change layer.
    Type: Grant
    Filed: February 19, 2013
    Date of Patent: September 2, 2014
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Kensuke Takahashi, Masanobu Baba, Yusuke Arayashiki
  • Patent number: 8772753
    Abstract: A nonvolatile semiconductor storage device includes a word line, a first electrode, a high resistance ion diffusion layer, a second electrode, and a bit line. The word line is made of a conductive material extending in a first direction. The first electrode is provided on the word line. The high resistance ion diffusion layer is provided on the first electrode. The second electrode is provided on the ion diffusion layer and configured to supply a metal into the ion diffusion layer upon application of a positive voltage relative to the first electrode. The bit line is provided on the second electrode and made of a conductive material extending in a second direction orthogonal to the first direction. The ion diffusion layer contains oxygen at a higher concentration on the word line side than on the bit line side.
    Type: Grant
    Filed: August 28, 2012
    Date of Patent: July 8, 2014
    Assignee: Kabushiki Kaisha Toshiba
    Inventor: Masanobu Baba
  • Patent number: 8742391
    Abstract: A non-volatile semiconductor memory includes a word line extending in a first direction, a first electrode connected to the word line electrically, an ion diffusion layer with connected to the first electrode electrically, a second electrode connected to the ion diffusion layer electrically and formed of a metal to be diffused into the ion diffusion layer when a positive voltage is supplied thereto, and a bit line extending in a second direction perpendicular to the first direction, the bit line connected to the second electrode electrically. The ion diffusion layer has a first region disposed on the first electrode and a second region disposed between the first region and the second electrode, and the metal is more difficult to diffuse into the second region than into the first region.
    Type: Grant
    Filed: March 7, 2013
    Date of Patent: June 3, 2014
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Ichiro Mizushima, Hirotaka Ogihara, Kensuke Takahashi, Masanobu Baba
  • Publication number: 20140008603
    Abstract: A nonvolatile memory device has a memory cell including a resistance change layer, a first electrode, and a second electrode. The resistance change layer switches between high and low resistance states due to the transfer of metal ions from the first electrode in response to voltages applied between the electrodes. The first electrode is formed on a first side of the resistance change layer, and provides metal ions. The second electrode is formed on a second side of the resistance change layer. A memory cell region is formed between the first electrode and the second electrode with the resistance change layer. The memory device also includes a high permittivity layer with a higher dielectric constant than the resistance change layer.
    Type: Application
    Filed: February 19, 2013
    Publication date: January 9, 2014
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Kensuke TAKAHASHI, Masanobu Baba, Yusuke Arayashiki
  • Publication number: 20130312443
    Abstract: A combined air-conditioning and hot water supply system includes a refrigeration cycle mechanism, a hot water storage tank, and a controller. The refrigeration cycle mechanism has a compressor whose operating frequency can be controlled, a plate water-heat exchanger that heats water, a hot water supply pressure-reducing mechanism, and an outdoor heat exchanger. The controller includes a clock section, a computing section, a memory section, and a controlling section. The clock section measures time. The computing section calculates the actual hot water supply load. The memory section stores information related to the hot water supply load calculated by the computing section. The controlling section controls the operating frequency of the compressor based on the quantity of heat storage, the hot water supply load, and a preset hot water supply time.
    Type: Application
    Filed: February 14, 2011
    Publication date: November 28, 2013
    Applicant: MITSUBISHI ELECTRIC CORPORATION
    Inventors: Shogo Tamaki, Makoto Saito, Masanobu Baba
  • Publication number: 20130306301
    Abstract: A heat pump apparatus includes a heat source unit that cools or heats a refrigerant, an indoor unit that performs a cooling operation, and a hot water supply unit that performs a hot water supply operation. When there is an operation request for one of the indoor unit and the hot water supply unit, even when there is no operation request for the other, the heat pump apparatus causes both the one and the other to operate if the other satisfies a certain condition so that the hot water supply unit performs a hot water supply operation by utilizing a refrigerant heated by performing a cooling operation in the indoor unit and the indoor unit performs a cooling operation by utilizing a refrigerant cooled by performing a hot water supply operation in the hot water supply unit.
    Type: Application
    Filed: January 27, 2011
    Publication date: November 21, 2013
    Applicant: MITSUBISHI ELECTRIC CORPORATION
    Inventors: Shogo Tamaki, Makoto Saito, Masanobu Baba, Ryo Oua
  • Publication number: 20130234095
    Abstract: A nonvolatile semiconductor storage device includes a word line, a first electrode, a high resistance ion diffusion layer, a second electrode, and a bit line. The word line is made of a conductive material extending in a first direction. The first electrode is provided on the word line. The high resistance ion diffusion layer is provided on the first electrode. The second electrode is provided on the ion diffusion layer and configured to supply a metal into the ion diffusion layer upon application of a positive voltage relative to the first electrode. The bit line is provided on the second electrode and made of a conductive material extending in a second direction orthogonal to the first direction. The ion diffusion layer contains oxygen at a higher concentration on the word line side than on the bit line side.
    Type: Application
    Filed: August 28, 2012
    Publication date: September 12, 2013
    Inventor: Masanobu BABA