Patents by Inventor Masanobu Doken

Masanobu Doken has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device having buried insulating layer
    Patent number: 4241359
    Abstract: A semiconductor manufacturing method and device made therefrom by forming an insulating SiO.sub.2 film on both surfaces of a silicon substrate using an ion implantation process to form a buried SiO.sub.2 layer within the substrate a predetermined depth beneath one of the substrate surfaces, isolating a body of the substrate layer lying above the buried layer, and forming a semiconductive device in the isolated body. The surface layers of SiO.sub.2 serve to mechanically balance the internal strains generated within the substrate during the formation of the buried layer and thereby prevent the creation of mechanical imperfections in the surface portions of the substrate.
    Type: Grant
    Filed: March 2, 1978
    Date of Patent: December 23, 1980
    Assignee: Nippon Telegraph and Telephone Public Corporation
    Inventors: Katsutoshi Izumi, Masanobu Doken, Hisashi Ariyoshi