Abstract: [Object] To provide a negative type photosensitive siloxane composition capable of forming a cured film excellent in heat resistance and critical thickness for cracking [Means] The present invention provides a negative type photosensitive siloxane composition comprising: a polysiloxane containing silanol in a specific content, a particular photo base generator, and a solvent. The content of silanol is measured by FT-IR.

Abstract: [Problem] To provide a polysiloxanecapable of forming a cured film of a thick film with high heat resistance, a composition comprising the polysiloxane, and a method of manufacturing a cured film using the composition. [Means for Solution] To provide a polysiloxane comprising a repeating unit represented by the following formula (Ib), wherein R2 is each independently hydrogen, alkyl, aryl, alkenyl, and the like, a composition comprising the polysiloxane, and a method of manufacturing a cured film using the composition.

Abstract: [Problem] To provide a polysiloxanecapable of forming a cured film of a thick film with high heat resistance, a composition comprising the polysiloxane, and a method of manufacturing a cured film using the composition. [Means for Solution] To provide a polysiloxane comprising a repeating unit represented by the following formula (Ib), wherein R2 is each independently hydrogen, alkyl, aryl, alkenyl, and the like, a composition comprising the polysiloxane, and a method of manufacturing a cured film using the composition.

Abstract: [Object] To provide a negative type photosensitive siloxane composition capable of forming a cured film excellent in heat resistance and critical thickness for cracking [Means] The present invention provides a negative type photosensitive siloxane composition comprising : a polysiloxane containing silanol in a specific content, a particular photo base generator, and a solvent. The content of silanol is measured by FT-IR.

Abstract: A siliceous film having high purity and a low etching rate is formed by (a) a step for forming a siliceous film on a substrate by coating a solution composed of a polysilazane, e.g., perhydropolysilazane on a substrate and then hardening (curing) the solution in an oxidizing atmosphere, or by coating a silica solution formed by a sol-gel method on a substrate, and (b) a step for heating the siliceous film in an inert gas environment containing a nitrogen-containing compound such as an alkylamine having a base dissociation constant (pKb) no greater than 4.5, or a halogen-containing compound in which the bond energy of a halogen atom such as F2, Br2, or NF3 is no greater than 60 kcal/mol, in order to anneal the film.

Abstract: The present invention provides a method for forming a siliceous film. According to the method, a siliceous film having a hydrophilic surface can be formed from a polysilazane compound at a low temperature. In the method, a composition containing a polysilazane compound and a silica-conversion reaction accelerator is applied on a substrate surface to form a polysilazane film, and then a polysilazane film-treatment solution is applied thereon so that the polysilazane compound can be converted into a siliceous film at 300° C. or less. The polysilazane film-treatment solution contains a solvent, hydrogen peroxide and an alcohol.

Abstract: A cover member of an illuminating unit is formed of a film insert molded product, in which a film is disposed on a decorative face. The film is arranged so an end part of the film is positioned in front of an end part of the decorative face, whereby a film end protecting area formed of an exposed part of a molded resin layer is provided between the end part of the decorative face and the end part of the film, and a surface of the film end protecting area is made flush with the surface of the film. A corner between the end part of the decorative face and an end face of the molded resin layer is set to be an acute angle, and the end face of the molded resin layer functions as a contact face with respect to a ceiling trim.

Abstract: A siliceous film having high purity and a low etching rate is formed by (a) a step for forming a siliceous film on a substrate by coating a solution composed of a polysilazane, e.g., perhydropolysilazane on a substrate and then hardening (curing) the solution in an oxidizing atmosphere, or by coating a silica solution formed by a sol-gel method on a substrate, and (b) a step for heating the siliceous film in an inert gas environment containing a nitrogen-containing compound such as an alkylamine having a base dissociation constant (pKb) no greater than 4.5, or a halogen-containing compound in which the bond energy of a halogen atom such as F2, Br2, or NF3 is no greater than 60 kcal/mol, in order to anneal the film.

Abstract: The present invention provides a method for formation of a siliceous film containing nitrogen in a low concentration. The method according to the present invention comprises the steps of: applying a polysilazane composition on an engraved substrate surface, to form a coating layer; hardening the coating layer only in the part adjacent to the substrate surface, to form a covering film along the shape of the engraved substrate; and removing the polysilazane composition of the coating layer in the part not hardened in the above covering film-formation step. According to this method, two or more siliceous films can be formed and layered.

Abstract: This invention relates to a dipping solution used in a process for producing a siliceous film. The present invention provides a dipping solution and a siliceous film-production process employing the solution. The dipping solution enables to form a homogeneous siliceous film even in concave portions of a substrate having concave portions and convex portions. The substrate is coated with a polysilazane composition, and then dipped in the solution before fire. The dipping solution comprises hydrogen peroxide, a foam-deposit inhibitor, and a solvent.

Abstract: [Problem] To provide a method capable of forming an insulating film suffering less from both shrinkage and stress. [Means for solving] A method for forming a silicon dioxide film, comprising the steps of: coating a substrate with a polysilazane composition to form a coat, and then heating the formed coat in a hydrogen peroxide atmosphere at 50 to 200° C. This method enables to form isolation structures such as various insulating films.

Abstract: This invention relates to a dipping solution used in a process for producing a siliceous film. The present invention provides a dipping solution and a siliceous film-production process employing the solution. The dipping solution enables to form a homogeneous siliceous film even in concave portions of a substrate having concave portions and convex portions. The substrate is coated with a polysilazane composition, and then dipped in the solution before fire. The dipping solution comprises hydrogen peroxide, a foam-deposit inhibitor, and a solvent.

Abstract: A film insert molded product is molded by injecting molten resin into a mold, after a film has been set on a cavity face of the mold, and then, hardening the resin. A back face of the film and a surface of a molded resin layer are adhered to integrate each other, and the film is disposed on a decorative face of the molded product. The film is so arranged that an end part of the film is positioned in front of an end part of the decorative face, whereby a film end protecting area formed of an exposed part of the molded resin layer is provided between the end part of the decorative face and the end part of the film, and a surface of the film end protecting area and the surface of the film are formed in flush with each other.

Abstract: The present invention provides a method for forming a siliceous film. According to the method, a siliceous film having a hydrophilic surface can be formed from a polysilazane compound at a low temperature. In the method, a composition containing a polysilazane compound and a silica-conversion reaction accelerator is applied on a substrate surface to form a polysilazane film, and then a polysilazane film-treatment solution is applied thereon so that the polysilazane compound can be converted into a siliceous film at 300° C. or less. The polysilazane film-treatment solution contains a solvent, hydrogen peroxide and an alcohol.

Abstract: This invention relates to a dipping solution used in a process for producing a siliceous film. The present invention provides a dipping solution and a siliceous film-production process employing the solution. The dipping solution enables to form a homogeneous siliceous film even in concave portions of a substrate having concave portions and convex portions. The substrate is coated with a polysilazane composition, and then dipped in the solution before fire. The dipping solution comprises hydrogen peroxide, a foam-deposit inhibitor, and a solvent.

Abstract: The present invention provides a method for formation of a siliceous film containing nitrogen in a low concentration. The method according to the present invention comprises the steps of: applying a polysilazane composition on an engraved substrate surface, to form a coating layer; hardening the coating layer only in the part adjacent to the substrate surface, to form a covering film along the shape of the engraved substrate; and removing the polysilazane composition of the coating layer in the part not hardened in the above covering film-formation step. According to this method, two or more siliceous films can be formed and layered.

Abstract: The present invention provides a siliceous film-forming composition having such a small thickness shrinkage ratio that a highly homogeneous siliceous film can be obtained. The invention also provides a trench isolation structure-fabrication process. According to this process, trenches even having very small widths can be homogeneously filled in. The composition contains a solvent and a polysilazane compound obtained by co-ammonolysis of one or a combination of two or more halosilane compounds. The process comprises the steps of coating a surface of a silicon substrate with the above composition, and subjecting the coated substrate to heat-treatment at less than 1000° C. under an oxygen atmosphere or an oxidizing atmosphere containing water vapor, so that the composition is converted into silicon dioxide in the form of a film.

Abstract: There are provided a developing solution, which can develop a photosensitive composition in a simple manner while maintaining satisfactory sensitivity and resolution, and a method for pattern formation using said developing solution. This developing solution comprises a compound containing a hydrophilic group(s) selected from the group consisting of an amine-N-oxide group, a sulfonate group, a sulfate group, a carboxylate group, and a phosphate group, and is particularly suitable for use in the development of a photosensitive composition comprising a silicon-containing polymer. The present invention also relates to a method for pattern formation using the developing solution.

Abstract: In order to provide an improved hybrid IC having a high density, compact in size, capable of being manufactured with a reduced cost, a hybrid IC of the present invention, comprises: a circuit board 2 having formed on the surface thereof a plurality of electrode patterns, and mounting on the same surface a plurality of electronic elements 3; a plurality of connection terminals 4 each formed into a generally rectangular frame structure including mutually facing first and second lateral plates, and mutually facing first and second longitudinal plates. In particular, one of the first and second lateral plates of each connection terminal 4 is fixedly connected to a connection electrode 2a on the circuit board 2. With the use of such structure, it is allowed to dispense with a process of solely connecting the connection terminals, thereby reducing the time and hence the cost for manufacturing a hybrid IC.

Abstract: A dyeing apparatus is disclosed which has a cylindrical vessel and a perforated hollow beam supported therein. Textile materials such as yarns, tapes and the like are wound upon the exterior of the beam and soaked to depth with treatment liquid forced radially through the perforations of the beam into the layers of wound-up material. Liquid is withdrawn from the vessel for re-circulation through a first take-out means provided adjacent the upper portion of the vessel and through a second take-out means provided centrally of the bottom portion of the vessel. Control means is provided to regulate the flow of liquid through the two take-out means to be in a specified ratio.