Patents by Inventor Masanobu Igeta

Masanobu Igeta has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220037162
    Abstract: Methods are provided for planarizing a patterned substrate in a spatial atomic layer processing system comprising a rotating platen. The patterned substrate may generally include features having higher regions and lower regions. To planarize the patterned substrate, or reduce a height differential between the higher and lower regions, a selective atomic layer etching (ALE) process is disclosed to preferentially form a modified layer on the higher regions of the features by exposing a surface of the patterned substrate to a precursor gas while the rotating platen spins at a high rotational speed. By preferentially forming the modified layer on the higher regions of the features, and subsequently removing the modified layer, the selective ALE process described herein preferentially etches the higher regions of the features to lessen the height differential between the higher and lower regions until a desired planarization of the features is achieved.
    Type: Application
    Filed: July 31, 2020
    Publication date: February 3, 2022
    Inventors: David O'Meara, Anthony Dip, Masanobu Igeta
  • Publication number: 20210376123
    Abstract: A method including depositing a dielectric film on a substrate including stacked structures with recessed portions formed on side surfaces of each of the stacked structures, wherein the dielectric film is deposited so that the stacked structures are covered at a thickness which is equal to or less than half a width of the recessed portions; filling a trench or trenches that are located between the stacked structures with a sacrificial film; etching the sacrificial film along the stacked structures; etching the dielectric film so that the dielectric film is etched more than the sacrificial film; removing the sacrificial film; after the removing of the sacrificial film, depositing a dielectric film to a thickness equal to or less than half the width of the recessed portions; and etching the deposited dielectric film, on a condition that the deposited dielectric film remains in the recessed portions.
    Type: Application
    Filed: May 25, 2021
    Publication date: December 2, 2021
    Applicant: Tokyo Electron Limited
    Inventors: Shimpei YAMAGUCHI, Atsushi TSUBOI, Atsushi ENDO, Masanobu IGETA, Masaru SUGIMOTO, Luis FERNANDEZ
  • Publication number: 20210375684
    Abstract: A method for manufacturing a semiconductor device includes forming a support on a side surface of a stack that extends from a substrate. The stack includes a second sacrificial film, plural first sacrificial films and plural silicon (Si)-containing films, wherein one first sacrificial film of the plural sacrificial films is stacked upon the second sacrificial film and the plural sacrificial films and the plural Si-containing films are alternately stacked upon one another, and at least a side of the second sacrificial film is not covered by the support, the one first sacrificial film and the substrate. The method further includes removing the second sacrificial film from the stack to form a space between the substrate and the one first sacrificial film and adjacent to the support, and filling the space with a dielectric film.
    Type: Application
    Filed: May 25, 2021
    Publication date: December 2, 2021
    Applicant: Tokyo Electron Limited
    Inventors: Shimpei YAMAGUCHI, Atsushi TSUBOI, Atsushi ENDO, Masaru SUGIMOTO, Hiroshi YANO, Yasushi KODASHIMA, Masanobu IGETA
  • Patent number: 10700009
    Abstract: A method is provided for void-free Ru metal filling of features in a substrate. The method includes providing a substrate containing features, depositing a Ru metal layer in the features, removing the Ru metal layer from a field area around an opening of the features, and depositing additional Ru metal in the features, where the additional Ru metal is deposited in the features at a higher rate than on the field area. According to one embodiment, the additional Ru metal is deposited until the features are fully filled with Ru metal.
    Type: Grant
    Filed: October 1, 2018
    Date of Patent: June 30, 2020
    Assignee: Tokyo Electron Limited
    Inventors: Kai-Hung Yu, Nicholas Joy, Eric Chih Fang Liu, David L. O'Meara, David Rosenthal, Masanobu Igeta, Cory Wajda, Gerrit J. Leusink
  • Publication number: 20190103363
    Abstract: A method is provided for void-free Ru metal filling of features in a substrate. The method includes providing a substrate containing features, depositing a Ru metal layer in the features, removing the Ru metal layer from a field area around an opening of the features, and depositing additional Ru metal in the features, where the additional Ru metal is deposited in the features at a higher rate than on the field area. According to one embodiment, the additional Ru metal is deposited until the features are fully filled with Ru metal.
    Type: Application
    Filed: October 1, 2018
    Publication date: April 4, 2019
    Inventors: Kai-Hung Yu, Nicholas Joy, Eric Chih Fang Liu, David L. O'Meara, David Rosenthal, Masanobu Igeta, Cory Wajda, Gerrit J. Leusink
  • Publication number: 20160322218
    Abstract: A film forming method for forming a nitride film on a workpiece substrate accommodated within a process vessel, including: performing a first reaction of supplying a first precursor gas to the workpiece substrate accommodated within the process vessel; performing a second reaction of supplying a second precursor gas to the workpiece substrate accommodated within the process vessel; performing a modification of generating plasma of a modifying gas just above the workpiece substrate by supplying the modifying gas into the process vessel and supplying microwaves from an antenna into the process vessel, and plasma-processing, by the plasma thus generated, a surface of the workpiece substrate subjected to the first and second reactions using the first and second precursor gases.
    Type: Application
    Filed: April 28, 2016
    Publication date: November 3, 2016
    Inventors: Noriaki FUKIAGE, Masahide IWASAKI, Toyohiro KAMADA, Ryosuke EBIHARA, Masanobu IGETA
  • Patent number: 8853100
    Abstract: According to an embodiment of present disclosure, a film formation method is provided. The film formation method includes supplying a first process gas as a source gas for obtaining a reaction product to a substrate while rotating a turntable and revolving the substrate, and supplying a second process gas as a gas for nitriding the first process gas adsorbed to the substrate to the substrate in a position spaced apart along a circumferential direction of the turntable from a position where the first process gas is supplied to the substrate. Further, the film formation method includes providing a separation region along the circumferential direction of the turntable between a first process gas supply position and a second process gas supply position, and irradiating ultraviolet rays on a molecular layer of the reaction product formed on the substrate placed on the turntable to control stresses generated in a thin film.
    Type: Grant
    Filed: June 28, 2013
    Date of Patent: October 7, 2014
    Assignee: Tokyo Electron Limited
    Inventors: Masanobu Igeta, Jun Sato, Kazuo Yabe, Hitoshi Kato, Yusaku Izawa
  • Publication number: 20140004713
    Abstract: According to an embodiment of present disclosure, a film formation method is provided. The film formation method includes supplying a first process gas as a source gas for obtaining a reaction product to a substrate while rotating a turntable and revolving the substrate, and supplying a second process gas as a gas for nitriding the first process gas adsorbed to the substrate to the substrate in a position spaced apart along a circumferential direction of the turntable from a position where the first process gas is supplied to the substrate. Further, the film formation method includes providing a separation region along the circumferential direction of the turntable between a first process gas supply position and a second process gas supply position, and irradiating ultraviolet rays on a molecular layer of the reaction product formed on the substrate placed on the turntable to control stresses generated in a thin film.
    Type: Application
    Filed: June 28, 2013
    Publication date: January 2, 2014
    Inventors: Masanobu IGETA, Jun SATO, Kazuo YABE, Hitoshi KATO, Yusaku IZAWA
  • Patent number: 7754293
    Abstract: A film forming method for forming an oxide film on a surface of a substrate to be processed in a processing vessel at a predetermined processing temperature, wherein the method includes a temperature elevating step of elevating a temperature of said substrate to a predetermined processing temperature, the step of elevating the temperature including a step of holding the substrate in an atmosphere containing oxygen before the substrate reaches a temperature of 450° C. The film forming method further comprises, after the step of elevating the temperature, a film forming step of forming a radical oxide film by irradiating the substrate surface with energy capable of exciting an oxygen gas.
    Type: Grant
    Filed: June 16, 2006
    Date of Patent: July 13, 2010
    Assignee: Tokyo Electron Limited
    Inventors: Shintaro Aoyama, Masanobu Igeta, Kazuyoshi Yamazaki
  • Patent number: 7501352
    Abstract: The present invention generally provides a method for preparing an oxynitride film on a substrate. A surface of the substrate is exposed to oxygen radicals formed by ultraviolet (UV) radiation induced dissociation of a first process gas comprising at least one molecular composition comprising oxygen to form an oxide film on the surface. The oxide film is exposed to nitrogen radicals formed by plasma induced dissociation of a second process gas comprising at least one molecular composition comprising nitrogen using plasma based on microwave irradiation via a plane antenna member having a plurality of slits to nitridate the oxide film and form the oxynitride film.
    Type: Grant
    Filed: March 30, 2005
    Date of Patent: March 10, 2009
    Assignees: Tokyo Electron, Ltd., International Business Machines Corporation (“IBM”)
    Inventors: Masanobu Igeta, Cory Wajda, David L. O'Meara, Kristen Scheer, Toshihara Eurakawa
  • Patent number: 7497964
    Abstract: A method to solve such a problem that plasma will not ignite in restarting operation of a processing container that has not been operated with the inside kept drawn to vacuum. Gas containing oxygen is passed in a processing container 21, and ultraviolet light is irradiated to the gas while gas inside the processing container 21 is being discharged. After that, a remote plasma source 26 is driven to ignite plasma.
    Type: Grant
    Filed: May 12, 2006
    Date of Patent: March 3, 2009
    Assignee: Tokyo Electron Limited
    Inventors: Masanobu Igeta, Kazuyoshi Yamazaki, Shintaro Aoyama, Hiroshi Shinriki
  • Publication number: 20080139000
    Abstract: A method of nitriding an insulation film, includes the steps of forming nitrogen radicals by high-frequency plasma, and causing nitridation in a surface of an insulation film containing therein oxygen, by supplying the nitrogen radicals to the surface of the insulation film.
    Type: Application
    Filed: January 10, 2008
    Publication date: June 12, 2008
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Masanobu IGETA, Shintaro Aoyama, Hiroshi Shinriki, Tsuyoshi Takahashi
  • Patent number: 7378358
    Abstract: A substrate-processing apparatus (100, 40) comprises a radical-forming unit (26) for forming the nitrogen radicals and oxygen radicals through a high-frequency plasma, a processing vessel (21) in which a substrate (W) to be processed is held, and a gas-supplying unit (30) which is connected to the radical-forming unit. The gas-supplying unit (30) controls the mixture ratio between a first raw material gas containing the nitrogen and a second raw material gas containing oxygen, and supplies a mixture gas of a desired mixture ratio to the radical-forming unit. By supplying the nitrogen radicals and oxygen radicals mixed at the controlled mixture ratio to the surface of the substrate, an insulating film having a desired nitrogen concentration is formed on the surface of the substrate.
    Type: Grant
    Filed: September 19, 2003
    Date of Patent: May 27, 2008
    Assignee: Tokyo Electron Limited
    Inventors: Masanobu Igeta, Shintaro Aoyama, Hiroshi Shinriki
  • Publication number: 20070190802
    Abstract: A radical source is movably provided in a processing vessel holding a substrate, and the location or driving energy of the radical source is set such that the film formed on the substrate has a uniform thickness. Further, a radical source is provided at a first side of the substrate and a radical flow is formed such that the radical flow flows from the first side of the substrate surface to the other side. By optimizing the condition of the radical flow, the film formed on the substrate has a uniform thickness.
    Type: Application
    Filed: April 16, 2007
    Publication date: August 16, 2007
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: SHINTARO AOYAMA, Hiroshi Shinriki, Masanobu Igeta
  • Publication number: 20070065593
    Abstract: A method for preparing an oxide film on a substrate. A surface of a substrate is oxidized to form an oxide film. The surface is exposed to oxygen radicals formed by ultraviolet (UV) radiation induced dissociation and plasma induced dissociation of a process gas comprising at least one molecular composition comprising oxygen.
    Type: Application
    Filed: September 21, 2005
    Publication date: March 22, 2007
    Inventors: Cory Wajda, David O'Meara, Masanobu Igeta
  • Publication number: 20070066084
    Abstract: A method and processing system for treating a surface of a substrate. The surface is exposed to at least two radicals from at least two radical sources. The radicals generated from the respective radical sources interact with different areas of the substrate surface. The invention suitably improves uniformity of oxidation, nitridation, or both.
    Type: Application
    Filed: September 21, 2005
    Publication date: March 22, 2007
    Inventors: Cory Wajda, David O'Meara, Masanobu Igeta
  • Patent number: 7129185
    Abstract: A substrate processing method includes the steps of removing carbon from a surface of a silicon substrate by irradiating an ultraviolet light on the surface in an essentially ultraviolet nonreactive gas atmosphere and forming an oxide film or an oxynitride film on the surface of the silicon substrate by irradiating an ultraviolet light thereon in an essentially ultraviolet reactive gas atmosphere. Further, a computer readable storage medium stores therein a program for controlling the substrate processing method.
    Type: Grant
    Filed: October 19, 2004
    Date of Patent: October 31, 2006
    Assignee: Tokyo Electron Limited
    Inventors: Shintaro Aoyama, Masanobu Igeta, Hiroshi Shinriki
  • Patent number: 7125799
    Abstract: A substrate processing method includes the step of removing carbon from a silicon substrate surface and planarizing the silicon substrate surface from which carbon has been removed.
    Type: Grant
    Filed: December 27, 2002
    Date of Patent: October 24, 2006
    Assignee: Tokyo Electron Limited
    Inventors: Shintaro Aoyama, Masanobu Igeta, Hiroshi Shinriki, Tsuyoshi Takahashi
  • Publication number: 20060234515
    Abstract: A film forming method for forming an oxide film on a surface of a substrate to be processed in a processing vessel at a predetermined processing temperature, wherein the method includes a temperature elevating step of elevating a temperature of said substrate to a predetermined processing temperature, the step of elevating the temperature including a step of holding the substrate in an atmosphere containing oxygen before the substrate reaches a temperature of 450° C. The film forming method further comprises, after the step of elevating the temperature, a film forming step of forming a radical oxide film by irradiating the substrate surface with energy capable of exciting an oxygen gas.
    Type: Application
    Filed: June 16, 2006
    Publication date: October 19, 2006
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Shintaro Aoyama, Masanobu Igeta, Kazuyoshi Yamazaki
  • Publication number: 20060228898
    Abstract: A method for preparing an interfacial layer for a high-k dielectric layer on a substrate. A surface of said substrate is exposed to oxygen radicals formed by ultraviolet (UV) radiation induced dissociation of a first process gas comprising at least one molecular composition comprising oxygen to form an oxide film. The oxide film is exposed to nitrogen radicals formed by plasma induced dissociation of a second process gas comprising at least one molecular composition comprising nitrogen to nitridate the oxide film to form the interfacial layer. A high-k dielectric layer is formed on said interfacial layer.
    Type: Application
    Filed: March 30, 2005
    Publication date: October 12, 2006
    Inventors: Cory Wajda, Masanobu Igeta, Gerrit Leusink