Abstract: According to the present disclosure, a heat treatment apparatus includes a heating treatment unit that heat-treats a strip-shaped sheet while transferring the strip-shaped sheet, and a cooling unit that cools the strip-shaped sheet having been heat-treated in the heating treatment unit while transferring the strip-shaped sheet. The cooling unit includes a cooling roller that allows a refrigerant to flow through the inside thereof, and an outer wall that surrounds the space in which the cooling roller is disposed. The heat treatment apparatus may further include a take-up unit in which the strip-shaped sheet having been cooled in the cooling unit is wound.

Abstract: A structure of a component assembled part includes a bracket provided in a first component, and a cover part provided in a second component. The cover part includes an internal space configured such that the bracket is inserted up to a predetermined insertion position so as to cover the bracket from a front side of the bracket to a back side of the bracket when the first component and the second component are assembled to each other. The cover part includes an opening, which allows the internal space of the cover part and an outside of the cover part to communicate with each other, at a position corresponding to a tip portion of the bracket in a state where the bracket is inserted into the internal space of the cover part up to the predetermined insertion position.

Abstract: A structure of a component assembled part includes a bracket provided in a first component, and a cover part provided in a second component. The cover part includes an internal space configured such that the bracket is inserted up to a predetermined insertion position so as to cover the bracket from a front side of the bracket to a back side of the bracket when the first component and the second component are assembled to each other. The cover part includes an opening, which allows the internal space of the cover part and an outside of the cover part to communicate with each other, at a position corresponding to a tip portion of the bracket in a state where the bracket is inserted into the internal space of the cover part up to the predetermined insertion position.

Abstract: An optical element includes a separation section that can separate incident light according to a wavelength. The separation section has an optical characteristic in which incident light in a first wavelength band is reflected, incident light in a second wavelength band is transmitted, and incident light in a third wavelength band is partially transmitted and partially reflected.

Abstract: The invention relates to a sealing composition which comprises a crosslinkable fluoroelastomer, a crosslinking agent for this elastomer and a reinforcing polyimide resin powder; and seals such as O-rings, made by molding the composition into a prescribed shape and crosslinking the molded article. According to the invention, seals free from metals and sulfur can be made from a fluoroelastomer suitable for the production unit for semiconductor devices without a scatter of physical properties within one seal or among seals, and the obtained seals are lowered in the compression set determined ate the same hardness level to cause little permanent set by compression in use, thus having a prolonged service life.

Abstract: The invention relates to a sealing composition which comprises a crosslinkable fluoroelastomer, a crosslinking agent for this elastomer and a reinforcing polyimide resin powder; and seals such as O-rings, made by molding the composition into a prescribed shape and crosslinking the molded article. According to the invention, seals free from metals and sulfur can be made from a fluoroelastomer suitable for the production unit for semiconductor devices without a scatter of physical properties within one seal or among seals, and the obtained seals are lowered in the compression set determined ate the same hardness level to cause little permanent set by compression in use, thus having a prolonged service life.

Abstract: Disclosed is a semiconductor light receiving device which receives only long-wavelength side light, annihilates carriers generated in an optical filter layer without application of a voltage and prevents generation of noise. The semiconductor light receiving device includes a semiconductor substrate, an optical filter layer formed on the semiconductor substrate, a first conductivity type contact layer formed on the optical filter layer, a light receiving layer formed on the first conductivity type contact layer, a second conductivity type contact layer formed on the light receiving layer, a first conductivity type electrode formed on the first conductivity type contact layer, a second conductivity type electrode formed on the second conductivity type contact layer, and an antireflection film formed on a back surface of the semiconductor substrate.

Abstract: A semiconductor light receiving device refracts light input from the side direction of the device so that refracted lights reach light receiving sections formed on the top of a semiconductor substrate. The device includes the light receiving sections, a light receiving surface formed on an inclined surface crossing the back and sides of the semiconductor substrate and a reflection film, formed opposite to the light receiving surface, for reflecting at least a part of the light having plural wavelengths. The light receiving surface has different refraction angles according to the wavelengths of the input light and demultiplexes the input light wavelength by wavelength. The reflection film is formed on a recessed surface crossing the back and sides of the semiconductor substrate and reflects light at a reflection angle which differs according to the wavelength so that the input light is more easily demultiplexed into lights which reach the respective light receiving sections.

Abstract: In a semiconductor photodetector device having a slanting surface, an insulating film is formed over the slating surface as a reflective film under the condition that light is all reflected. Thus, a semiconductor device can be implemented which is high in sensibility and excellent in adhesion.

Abstract: The present invention provides a photoreceiving device that is inexpensive and has good properties as a photoreceiving device for selectively receiving long wavelength light. This is a semiconductor photoreceiving device 10 for selectively receiving long wavelength light from multiplexed light including long wavelength light A and short wavelength light B. This photoreceiving device comprises a multilayered film 22 comprising alternately stacked layers of materials having mutually different indexes of refraction and the thicknesses and number of which are designed so as to transmit said long wavelength light and reflect said short wavelength light; and a first light-absorbing layer 14 composed of a material having a band gap wavelength longer than the wavelength of said long wavelength light.

Abstract: Light on the longer wavelength side can be photoelectrically converted and output reliably, whilst improving the structural and operational reliability of a photodetector, by means of a simple manufacturing process and inexpensive manufacturing costs. A first light-absorbing layer, a buffer layer of a second conductivity type, a second light-absorbing layer of a second conductivity type and a window layer of a second conductivity type are laminated in this order onto the first principal surface of a substrate of a first conductivity type. The first light-absorbing layer contains a region of the first conductivity type and a region of the second conductivity type, and a diffused region of the first conductivity type having a depth extending from the upper face of the window layer to the interface between the window layer and the second light-absorbing layer is provided in a portion of the window layer.

Abstract: The present invention provides a photoreceiving device that is inexpensive and has good properties as a photoreceiving device for selectively receiving long wavelength light. This is a semiconductor photoreceiving device 10 for selectively receiving long wavelength light from multiplexed light including long wavelength light A and short wavelength light B. This photoreceiving device comprises a multilayered film 22 comprising alternately stacked layers of materials having mutually different indexes of refraction and the thicknesses and number of which are designed so as to transmit said long wavelength light and reflect said short wavelength light; and a first light-absorbing layer 14 composed of a material having a band gap wavelength longer than the wavelength of said long wavelength light.

Abstract: At a semiconductor photodetector 100, a photodetection portion 120 is formed on a first substrate surface 110a of a substrate 110. In addition, a recess 110d is formed at a second substrate surface 110b of the substrate 110 which faces opposite the first substrate surface 110a. This recessed portion 110d is formed as a wedge-type V-shaped groove with a forward mesa surface formed at a front surface thereof, and is formed approximately parallel to a side photodetection surface 110c of the substrate 110 which is approximately perpendicular to the second substrate surface 110b. A total reflection film is coated on the front surface of the recess 110d. In the semiconductor photodetector 100 structured as described above, an incoming light P1 entering through the side photodetection surface 110c is reflected at the recess 110d to enter the photodetection portion 120 from the side where the substrate 110 is provided. As a result, the incoming light P1 is sensed at the photodetection portion 120.

Abstract: A semiconductor light-receiving device includes a light-receiving section that receives an input light. The light-receiving section includes a light-receiving surface to which the input light is directed, a groove extending vertically into the light-receiving surface, and a thin film coated on the inside wall of the groove.

Abstract: s-Triazine (1,3,5-triazine) is chemically modified to obtain s-triazine derivative effective for prevention and treatment of estrogen-dependent diseases.