Abstract: Reliability of a scintillator structure is improved. The scintillator structure includes a plurality of cells and a reflective layer covering the plurality of cells. Here, each of the plurality of cells includes a resin and a phosphor, and the resin has a decrease rate of a total light transmittance that is less than 8% with respect to light having a wavelength of 542 nm after X-ray irradiation of a dose of 100 kGy.

Abstract: Reliability of a scintillator structure is improved. The scintillator structure includes a plurality of cells and a reflective layer covering the plurality of cells. Here, each of the plurality of cells includes a resin and a phosphor, and the resin includes a main agent including bi-7-oxabicyclo[4. 1. 0] heptane and a curing agent. Alternatively, each of the plurality of cells includes a resin and a phosphor, and the resin includes a main agent and a curing agent. The main agent includes: 3,4-epoxy cyclohexyl-methyl-(3,4-epoxy) cyclohexane carboxylate; and 1, 2-epoxy-4-(2-oxiranyl) cyclohexane adduct of 2, 2-bis(hydroxymethyl)-1-butanol.

Abstract: According to one embodiment, a wafer carrier cleaning method is provided. The wafer carrier cleaning method includes cleaning a wafer carrier with a chemical solution containing a weak acid that can dissolve metals, and cleaning the wafer carrier cleaned with the chemical solution, with pure water. The weak acid contained in the chemical solution is preferably citric acid that can dissolve heavy metals and does not damage the wafer carrier.

Abstract: A process monitoring system has a process chamber configured to hold an object to be processed, an illumination source configured to emit a light to the object, a polarizer configured to polarize the light, a monitor window having a birefringent material and provided on the process chamber to propagate the light, direction adjusting equipment configured to adjust a relationship between a polarization plane of the light and a direction of an optic axis of the monitor window, and a monitoring information processor configured to detect the light reflected from the object.

Abstract: A process monitoring system has a process chamber configured to hold an object to be processed, an illumination source configured to emit a light to the object, a polarizer configured to polarize the light, a monitor window having a birefringent material and provided on the process chamber to propagate the light, direction adjusting equipment configured to adjust a relationship between a polarization plane of the light and a direction of an optic axis of the monitor window, and a monitoring information processor configured to detect the light reflected from the object.

Abstract: A process monitoring system has a process chamber configured to hold an object to be processed, an illumination source configured to emit a light to the object, a polarizer configured to polarize the light, a monitor window having a birefringent material and provided on the process chamber to propagate the light, direction adjusting equipment configured to adjust a relationship between a polarization plane of the light and a direction of an optic axis of the monitor window, and a monitoring information processor configured to detect the light reflected from the object.

Abstract: A process monitoring system has a process chamber configured to hold an object to be processed, an illumination source configured to emit a light to the object, a polarizer configured to polarize the light, a monitor window having a birefringent material and provided on the process chamber to propagate the light, direction adjusting equipment configured to adjust a relationship between a polarization plane of the light and a direction of an optic axis of the monitor window, and a monitoring information processor configured to detect the light reflected from the object.

Abstract: A process monitoring system has a process chamber configured to hold an object to be processed, an illumination source configured to emit a light to the object, a polarizer configured to polarize the light, a monitor window having a birefringent material and provided on the process chamber to propagate the light, direction adjusting equipment configured to adjust a relationship between a polarization plane of the light and a direction of an optic axis of the monitor window, and a monitoring information processor configured to detect the light reflected from the object.

Abstract: A method for fabricating a pattern, includes: delineating a mask pattern on at least a portion of an underlying layer; etching a portion of the mask pattern; irradiating an incident light on the mask pattern to which the etching is performed and detecting a reflected light produced by reflecting the incident light after the incident light is transmitted through the mask pattern; obtaining a reflected interference spectrum; and calculating a pattern width of the mask pattern using data of the reflected interference spectrum, the reflected interference spectrum being in a wavelength range of not less than two times a pitch of the mask pattern.

Abstract: A process monitoring system has a process chamber configured to hold an object to be processed, an illumination source configured to emit a light to the object, a polarizer configured to polarize the light, a monitor window having a birefringent material and provided on the process chamber to propagate the light, direction adjusting equipment configured to adjust a relationship between a polarization plane of the light and a direction of an optic axis of the monitor window, and a monitoring information processor configured to detect the light reflected from the object.

Abstract: A method for fabricating a pattern, includes: delineating a mask pattern on at least a portion of an underlying layer; etching a portion of the mask pattern; irradiating an incident light on the mask pattern to which the etching is performed and detecting a reflected light produced by reflecting the incident light after the incident light is transmitted through the mask pattern; obtaining a reflected interference spectrum; and calculating a pattern width of the mask pattern using data of the reflected interference spectrum, the reflected interference spectrum being in a wavelength range of not less than two times a pitch of the mask pattern.