Abstract: The method includes the processes of: forming a magnetoresistance effect layer on a work; forming a mask layer on the magnetoresistance effect layer; forming a reproducing element section by etching a part of the magnetoresistance effect layer, in which the mask layer is not formed; forming an insulating layer so as to coat the reproducing element section and the mask layer on the reproducing element section; forming a bias layer and a cap layer on the insulating layer; etching specific parts of the cap layer and the bias layer until parts of the bias layer are exposed; forming a protection layer so as to coat the exposed parts of the bias layer; and flattening the entire surface, by reducing a height of the layered body including the above described layers, without re-exposing the exposed parts.

Abstract: The read-head is capable of corresponding to high recording density without deteriorating characteristics even if a small size read-element is used. The read-head of the present invention comprises: a read-element including a free layer; and a magnetic domain control layer for domain-controlling the free layer. The magnetic domain control layer is composed of a soft magnetic material including at least one substance selected from the group consisting of Fe, Co and Ni. A ratio (a/b) of a length (a) of the magnetic domain control layer in the core width direction to a length (b) thereof in the height direction is 5 or more, and the length (b) is 100 nm or less.

Abstract: The magnetoresistance effect type read-head is capable of stably applying bias magnetic fields of hard films to a read-element, stabilizing characteristics of the read-head and improving quality thereof. The magnetoresistance effect type read-head comprises: the read-element; a couple of the hard films sandwiching the read-element, the hard films applying bias magnetic fields to the read-element; and a soft magnetic film being provided on the height direction side, the soft magnetic film connecting an end section of one of the hard films, which is located on the far side with respect to the read-element, to an end section of the other hard film, which is located on the opposite far side with respect to the read-element, so as to circulate magnetic fluxes of the hard films via the soft magnetic film.

Abstract: A magnetoresistive MR element 10, which is constituted by allocating a magnetic layer 22a, 22b between a sensing layer (free-magnetic layer) 11 whose magnetization rotates in response to an external magnetic field, and a bias application layer 15a, 15b for applying a bias magnetic field to the sensing layer (free-magnetic layer) 11. The components of the bias magnetic layer in the element height direction are cancelled and a stable bias magnetic field is applied to the sensing layer in the core width direction, and thereby Barkhausen noise can be prevented by forming small crystal grains with the magnetic layer 22a, 22b and transferring the bias magnetic field from the bias application layer 15a, 15b to the sensing layer (free-magnetic layer) 11 through such small crystal grains.

Abstract: The magnetic head is capable of effectively applying a bias magnetic field of a hard magnetic layer to the read-head so as to improve and stabilize detection performance. The magnetic head of the present invention comprises: a lower shielding layer; a read-element being formed on the lower shielding layer; an insulating layer continuously coating side faces of the read-element a surface of the lower shielding layer; a base layer being formed on the insulating layer; and a hard magnetic layer being formed on the base layer. Parts of the insulating layer, which coat the side faces of the read-element, are coated with no base layer.

Abstract: The magnetic head is capable of controlling characteristics of hard films close to a read-element so as to suitably apply bias magnetic fields of the hard films to the read-element. The magnetic head basically comprises: a read-element; a lower shielding layer; insulating films respectively coating side faces of the read-element and a surface of the lower shielding layer; and hard films being respectively formed on the insulating films with base layers. The magnetic head is characterized in that each of the base layers is constituted by: a first base layer coating a first part of the insulating film, which coats the side face of the read-element; and a second base layer coating a second part of the insulating film, which coats a part of the lower shielding layer outwardly extending from the side face of the read-element.

Abstract: Intensity of the longitudinal bias field applied to a free soft magnetic layer in a magnetoresistive element can be adjusted after formation, by providing of a composite ferromagnetic layer for longitudinally biasing the free soft magnetic layer. The composite ferromagnetic layer has sub-ferromagnetic layers 15a, 15b, and 15c having different coercive forces. The intensity of the longitudinal bias field is adjusted by inversely rotating the fields of one or more sub-ferromagnetic layers by 180° or 90°, by applying external magnetic fields of appropriate intensity.

Abstract: The method of producing a thin film magnetic head is capable of flattening a surface of a hard bias film without badly influencing a read-element. The method comprises the steps of: forming a magnetoresistance effect film on a wafer substrate; forming a resist layer, at a position corresponding to a read-element of the thin film magnetic head, on the magnetoresistance effect film; forming the read-element by removing a part of the magnetoresistance effect film which is exposed from the resist layer; forming an insulating film so as to coat side faces of the read-element; forming a hard bias film on the insulating film by sputtering; and etching a surface of the hard bias film by ion beam etching so as to flatten the surface thereof.

Abstract: The method of producing a thin film magnetic head is capable of highly precisely flattening an upper shielding layer without badly influencing a read-element, etc. The method comprises the steps of: forming a read-element on a wafer substrate; forming a hard bias film on the both sides of the read-element; forming an upper shielding layer in a specific area, which is located on the read-element and the hard bias film and defined by outer edges of the hard bias film in a plane-direction; and removing parts of the upper shielding layer, which are outwardly projected from outer edge of the upper shielding layer in the plane-direction, by etching, wherein the upper shielding layer is used as a mask of the etching process.