Patents by Inventor Masanori Fukuhira

Masanori Fukuhira has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5817285
    Abstract: Silicon nitride powder is continuously prepared by feeding metallic silicon powder into a fluidized bed comprising silicon nitride powder and nitrogen or ammonia gas and discharging a nitrided product from the fluidized bed. The metallic silicon powder is pretreated at a temperature of 1,000.degree.-1,400.degree. C. under a vacuum of 0.001-100 Torr before it is subject to nitriding reaction.
    Type: Grant
    Filed: December 4, 1996
    Date of Patent: October 6, 1998
    Assignee: Shin-Etsu Chemical Co., Ltd.
    Inventors: Hirofumi Fukuoka, Yoshiharu Konya, Masanori Fukuhira
  • Patent number: 5573689
    Abstract: In a fluidized bed reactor for preparing a metal nitride by feeding metal powder and a non-oxidizing gas containing N.sub.2 or NH.sub.3 into a reaction tube (1) to form a fluidized bed (2) therein and heating the fluidized bed for nitriding the metal powder, an envelope (11) encloses the reaction tube (1) for preventing the surrounding air from entering the reaction tube. A heater (9) is disposed outside the envelope (11) for heating the fluidized bed (2) to 1,200.degree. C. or higher. The envelope prevents penetration of the surrounding air into the reaction tube and also prevents deterioration of the heater and surrounding components by scattering of metal fines. The reactor ensures safe operation to prepare metal nitride powder of high purity on an industrial scale.
    Type: Grant
    Filed: January 31, 1996
    Date of Patent: November 12, 1996
    Assignee: Shin-Etsu Chemical Co., Ltd.
    Inventors: Hirofumi Fukuoka, Yoshiharu Konya, Masanori Fukuhira, Ichiro Ishizaka
  • Patent number: 5456896
    Abstract: Silicon nitride powder is prepared by nitriding metallic silicon powder in a nitriding gas atmosphere at a temperature of 1,000.degree. C.-1,500.degree. C. Midway the nitriding step, the nitrided product is heat treated in an inert non-oxidizing gas atmosphere or vacuum at a temperature higher than the nitriding temperature, but lower than 1,600.degree. C. The product is nitrided again, obtaining high .alpha.-content silicon nitride powder.
    Type: Grant
    Filed: July 12, 1994
    Date of Patent: October 10, 1995
    Assignee: Shin-Etsu Chemical Co., Ltd.
    Inventors: Hirofumi Fukuoka, Masaki Watanabe, Yoshiharu Konya, Masanori Fukuhira
  • Patent number: 5441694
    Abstract: In a method for preparing a high .alpha.-type silicon nitride powder by adding to and mixing with metallic silicon powder a copper catalyst and nitriding the mixture in a non-oxidizing gas atmosphere containing nitrogen or ammonia at 1,000.degree. to 1,500.degree. C., the amount of copper catalyst is limited to from 0.05 % to less than 0.5 % by weight of copper based on the weight of the metallic silicon. There is obtained silicon nitride powder of high purity at low cost and high efficiency since the copper catalyst can be efficiently removed from the silicon nitride powder through conventional acid treatment.
    Type: Grant
    Filed: June 10, 1994
    Date of Patent: August 15, 1995
    Assignee: Shin-Etsu Chemical Co., Ltd.
    Inventors: Masanori Fukuhira, Hirofumi Fukuoka, Yoshiharu Konya, Masaki Watanabe
  • Patent number: 5232677
    Abstract: Silicon nitride powder is produced in two steps, by supplying metallic silicon powder to a fluidized bed composed of silicon nitride and nitrogen or ammonia gas where primary nitriding reaction is effected until the silicon powder is nitrided to an amount of at least 50% and transferring the nitrided product from the fluidized bed into a moving bed where secondary nitriding reaction is effected for nitriding the unreacted silicon with nitrogen or ammonia gas. This method is adapted for manufacture on a commercial scale because the silicon nitride powder thus obtained is consistent and has a very high degree of nitriding and a minimal variation in quality.
    Type: Grant
    Filed: January 29, 1991
    Date of Patent: August 3, 1993
    Assignee: Shin-Etsu Chemical Co., Ltd.
    Inventors: Hirofumi Fukuoka, Mutsuo Shimizu, Hidemitsu Ochiai, Hideaki Shimizu, Masanori Fukuhira
  • Patent number: 5210250
    Abstract: A simple but very effective and reliable method is proposed for the decolorizing purification of a halogenated silane compound, e.g., methyl trichlorosilane, colored by containing a very small amount of heavy metal impurities such as iron. The method comprises: contacting the halogenated silane compound with a small amount of a cationic surface active agent which is solid and insoluble in the silane such as a quaternary ammonium salt, e.g., trimethyl octadecyl ammonium chloride, for 2 to 240 minutes; and then separating the silane compound from the cationic surface active agent.
    Type: Grant
    Filed: August 27, 1992
    Date of Patent: May 11, 1993
    Assignee: Shin-Etsu Chemical Co. Ltd.
    Inventors: Isao Watanuki, Hiroshi Tsumura, Nobuhiko Kodana, Kazushi Satoh, Masanori Fukuhira, Hidehiko Aonuma
  • Patent number: 5073358
    Abstract: Silicon nitride powder is prepared by continuously supplying metallic silicon powder to a first fluidized bed which is composed of silicon nitride powder and a non-oxidizing reaction gas containing nitrogen or ammonia gas and maintained at 1,000.degree. to 1,400.degree. C. where primary nitriding reaction takes place, and continuously withdrawing the nitride product from the first fluidized bed and supplying it to a second fluidized bed of similar composition where secondary nitriding reaction takes place for nitriding the unreacted metallic silicon powder.
    Type: Grant
    Filed: July 24, 1990
    Date of Patent: December 17, 1991
    Assignee: Shin-Etsu Chemical Co., Ltd.
    Inventors: Mutsuo Shimizu, Hirofumi Fukuoka, Masanori Fukuhira