Abstract: According to one embodiment, a semiconductor device 1 includes a temperature sensor module 10 that outputs a non-linear digital value with respect to temperature and a substantially linear sensor voltage value with respect to the temperature, a storage unit 30 that stores the temperature, the digital value, and the sensor voltage value, and a controller 40 that calculates a characteristic formula using the temperature, the digital value, and the sensor voltage value stored in the storage unit 30, in which the temperature, the digital value, and the sensor voltage value stored in the storage unit 30 include absolute temperature under measurement of absolute temperature, the digital value at the absolute temperature, and the sensor voltage value at the absolute temperature.

Abstract: According to one embodiment, a semiconductor device 1 includes a temperature sensor module 10 that outputs a non-linear digital value with respect temperature and a substantial linear sensor voltage value with respect to the temperature, a storage unit 30 that stores the temperature, the digital value, and the sensor voltage value, and a controller 40 that calculates a characteristic formula using the temperature, the digital value, and the sensor voltage value stored in the storage 30, in which the temperature, the digital value, and the sensor voltage value stored in the storage unit 30 include absolute temperature under measurement of absolute temperature, the digital value at the absolute temperature, and the sensor voltage value at the absolute temperature.

Abstract: It is an object of the present invention to provide a novel therapeutic agent for hepatoma viruses. Specifically, the present invention relates to an anti-hepatoma virus agent, containing as an active ingredient a compound represented by the following Formula (I) or a pharmaceutically acceptable salt thereof: (wherein R1 is fluorine or hydrogen).

Abstract: A ferrite sintered magnet 100 comprises M-type ferrite crystal grains 4 and multiple-crystal grain boundaries 6b surrounded by three or more of the M-type ferrite crystal grains 4. The ferrite sintered magnet 100 contains at least Fe, Ca, B, and Si, and contains 0.005 to 0.9 mass % of B in terms of B2O3. The multiple-crystal grain boundaries 6b contain Si and Ca, and in a case where the molar ratio of Ca to Si in the multiple-crystal grain boundaries 6b is represented by (Ca/Si)G, the following formula is satisfied. 0.1<(Ca/Si)G<0.

Abstract: A catalyst for purification of exhaust gas containing a phosphorus compound includes: a lower catalyst layer containing at least one of noble metal provided on a refractory three-dimensional structure; and an upper catalyst layer at an inflow side of exhaust gas and an upper catalyst layer at an outflow side of exhaust gas provided on a surface of the lower catalyst layer. The upper catalyst layer at the inflow side and the upper catalyst layer at the outflow side have different concentrations of noble metal. The catalyst has an intermediate zone with a length of 3 to 23% of the overall length of the refractory three-dimensional structure provided between the upper catalyst layer at the inflow side and the upper catalyst layer at the outflow side. The intermediate zone starts from a position 10 to 38% from an end face of the catalyst at the inflow side of exhaust gas.

Abstract: The present invention provides a ferrite sintered magnet comprising ferrite crystal grains having a hexagonal structure, wherein the ferrite sintered magnet comprises metallic elements at an atomic ratio represented by formula (1). In formula (1), R is at least one element selected from the group consisting of Bi and rare-earth elements, and R comprises at least La. In formula (1), w, x, z and m satisfy formulae (2) to (5). The above-mentioned ferrite sintered magnet further has a coefficient of variation of a size of the crystal grains in a section parallel to a c axis of less than 45%. Ca1-w-xRwSrxFezCom??(1) 0.360?w=0.420??(2) 0.110?x?0.173??(3) 8.51?z?9.71??(4) 0.208?m?0.

Abstract: A ferrite sintered magnet comprising an M type Sr ferrite having a hexagonal structure as a main phase, wherein the ferrite sintered magnet comprises La and Co, a content of B is 0.005 to 0.9% by mass in terms of B2O3, a content of Zn is 0.01 to 1.2% by mass in terms of ZnO, and the ferrite sintered magnet satisfies [La]/[Zn]?0.79 and [Co]/[Zn]?0.67 when an atomic concentration of La is represented by [La], an atomic concentration of Co is represented by [Co], and an atomic concentration of Zn is represented by [Zn].

Abstract: A ferrite sintered magnet 100 comprises M-type ferrite crystal grains 4 having a hexagonal crystal structure, two-crystal grain boundaries 6a formed between two of the M-type ferrite crystal grains 4, and multiple-crystal grain boundaries 6b surrounded by three or more of the M-type ferrite crystal grains 4. This ferrite sintered magnet 100 contains at least Fe, Ca, B, and Si, and contains B in an amount of 0.005 to 0.9 mass % in terms of B2O3, the two-crystal grain boundaries 6a and the multiple-crystal grain boundaries 6b contain Si and Ca, and in a cross-section parallel to a c-axis of the ferrite sintered magnet, when the number of multiple-crystal grain boundaries having a maximum length of 0.088 or more and less than 0.49 ?m per cross-sectional area of 76 ?m2 is P, P is 8 or more.

Abstract: A ferrite sintered magnet 100 comprises M-type ferrite crystal grains 4 having a hexagonal structure, two-crystal grain boundaries 6a formed between two of the M-type ferrite crystal grains 4, and multiple-crystal grain boundaries 6b surrounded by three or more of the M-type ferrite crystal grains 4. This ferrite sintered magnet 100 contains at least Fe, Ca, B, and Si, and contains B in an amount of 0.005 to 0.9 mass % in terms of B2O3, the two-crystal grain boundaries 6a and the multiple-crystal grain boundaries 6b contain Si and Ca, and in a cross-section parallel to a c-axis of the ferrite sintered magnet, when the number of multiple-crystal grain boundaries 6b having a maximum length of 0.49 to 5 ?m per cross-sectional area of 76 ?m2 is N, N is 7 or less.

Abstract: This ferrite sintered magnet comprises ferrite phases having a magnetoplumbite type crystal structure. This magnet comprises an element R, an element M, Fe, Co, B, Mn and Cr, the element R is at least one element selected from rare earth elements including Y, the element M is at least one element selected from the group consisting of Ca, Sr and Ba, with Ca being an essential element, and when an atomic composition of metallic elements is represented by R1-xMxFem-yCoy, x, y and m satisfy formulae: 0.2?x?0.8??(1) 0.1?y?0.65??(2) 3?m<14??(3). Additionally, a content of B is 0.1 to 0.4% by mass in terms of B2O3, a content of Mn is 0.15 to 1.02% by mass in terms of MnO, and a content of Cr is 0.02 to 2.01% by mass in terms of Cr2O3.

Abstract: A ferrite sintered magnet comprising an M type Sr ferrite having a hexagonal structure as a main phase, wherein the ferrite sintered magnet does not substantially comprise a rare earth element and Co, a content of B is 0.005 to 0.9% by mass in terms of B2O3, and a content of Zn is 0.01 to 1.2% by mass in terms of ZnO.

Abstract: This ferrite sintered magnet comprises metallic elements at an atomic ratio represented by formula (1): Ca1-w-xRwSrxFezCom ??(1) in formula (1), R is at least one element selected from the group consisting of rare-earth elements and Bi, and R comprises at least La, in formula (1), w, x, z and m satisfy formulae (2) to (5): 0.360?w?0.420 ??(2) 0.110?x?0.173 ??(3) 8.51?z?9.71 ??(4) 0.208?m?0.269 ??(5), and in a section parallel to an axis of easy magnetization, when the number of total ferrite grains is N and the number of ferrite grains having a stacking fault is n, 0?n/N?0.20 is satisfied.

Abstract: A ferrite sintered magnet comprises a plurality of main phase grains containing a ferrite having a hexagonal structure, wherein at least some of the main phase grains are core-shell structure grains each having a core and a shell covering the core; and wherein the minimum value of the content of La in the core is [La]c atom %; the minimum value of the content of Co in the core is [Co]c atom %; the maximum value of the content of La in the shell is [La]s atom %; the maximum value of the content of Co in the shell is [Co]s atom %; [La]c+[Co]c is 3.08 atom % or more and 4.44 atom % or less; and [La]s+[Co]s is 7.60 atom % or more and 9.89 atom % or less.

Abstract: A semiconductor device includes a first temperature sensor module, a second temperature sensor module, a first temperature controller, and a second temperature controller. The first temperature sensor module includes a bandgap reference circuit that outputs a plurality of divided voltages, and a first conversion circuit that performs analog-to-digital conversion processing on one of the plurality of divided voltages to generate a first digital value. The second temperature sensor module includes a second conversion circuit that performs analog-to-digital conversion processing on the one of the plurality of divided voltages to generate a second digital value. The first temperature sensor controller converts the first digital value to a first temperature. The second temperature sensor controller converts the second digital value to a second temperature.

Abstract: The present invention provides exhaust gas purification catalyst for an internal combustion engine, and exhaust gas purification method using the catalyst. The present invention provides the exhaust gas purification catalyst including a support, a first catalyst layer on an upstream side, a second catalyst layer on a downstream side, and a third catalyst layer. In the exhaust gas purification catalyst, the upstream portion of the third catalyst layer is present on the first catalyst layer, the downstream portion of the third catalyst layer is present on the second catalyst layer, and in the middle portion between the upstream portion and the downstream portion of the third catalyst layer is present between the first catalyst layer and the second catalyst layer.

Abstract: The present invention provides an exhaust gas purifying catalyst which can maintain high catalyst activity even after the exhaust gas purifying catalyst is exposed to an exhaust gas at a high temperature for a long period of time. The exhaust gas purifying catalyst contains a Pd—Pr complex and PdO, and the Pd—Pr complex is represented by PraPdbOc, where a=1 to 3, b=1 to 10, and c=1 to 6.

Abstract: In order to provide an exhaust gas purification catalyst capable of purifying hydrocarbons, carbon monoxide, and nitrogen oxides in exhaust gas at low temperatures, the exhaust gas purification catalyst according to the present invention includes: a region (2) containing palladium on a three-dimensional structure (1), and a first region (3) and a second region (4) provided on the region (2) in order from an inflow side of exhaust gas to an outflow side of exhaust gas. The concentration of rhodium contained in the first region (3) is higher than the concentration of rhodium contained in the second region (4).

Abstract: In order to provide an exhaust gas purification catalyst capable of purifying hydrocarbons, carbon monoxide, and nitrogen oxides in exhaust gas at low temperatures, the exhaust gas purification catalyst according to the present invention includes: a region (2) containing palladium and yttrium on a three-dimensional structure (1), and a first region (3) and a second region (4) provided on the region (2) in order from an inflow side of exhaust gas to an outflow side of exhaust gas. The concentration of yttrium contained in the first region (3) and/or the second region (4) is higher than the concentration of yttrium contained in the region (2).

Abstract: The present invention provides an exhaust gas purifying catalyst which can maintain high catalyst activity even after the exhaust gas purifying catalyst is exposed to an exhaust gas at a high temperature for a long period of time. The exhaust gas purifying catalyst contains a Pd—Pr complex and PdO, and the Pd—Pr complex is represented by PraPdbOc, where a=1 to 3, b=1 to 10, and c=1 to 6.

Abstract: According to one embodiment, a semiconductor device 1 includes a temperature sensor module 10 that outputs a non-linear digital value with respect temperature and a substantial linear sensor voltage value with respect to the temperature, a storage unit 30 that stores the temperature, the digital value, and the sensor voltage value, and a controller 40 that calculates a characteristic formula using the temperature, the digital value, and the sensor voltage value stored in the storage 30, in which the temperature, the digital value, and the sensor voltage value stored in the storage unit 30 include absolute temperature under measurement of absolute temperature, the digital value at the absolute temperature, and the sensor voltage value at the absolute temperature.