Abstract: To provide a display apparatus that makes it possible to further improve a performance in controlling video presentation according to characteristics of an eyeball of a user. A display apparatus is provided that includes a light source; a processor that performs processing on a distribution of characteristics of an eyeball; a monitoring section that monitors a state of the eyeball; a matching section that performs matching on the distribution of the characteristics of the eyeball and the state of the eyeball; and an irradiator that irradiates a specified position on a retina with video display light emitted by the light source.

Abstract: Disclosed is a substrate treating method including a solvent supplying step of supplying a solvent to a center part of a substrate while increasing a rotation speed of the substrate. In the solvent supplying step, the solvent is successively supplied to the substrate until the solvent reaches a periphery edge of the substrate. With such a substrate treating method, the solvent is able to cover a substrate surface entirely with effective suppression of particles. In other words, a process of supplying the solvent to the substrate is performable with effectively improved quality.

Abstract: A coating apparatus includes an open/close valve having a motor that allows control of opening operation and closing operation in accordance with electric signals applied from a controller. The coating apparatus further includes a suck back valve having a motor that allows control of a volume variation in a flow path for suck back that is in communication with an upstream side and a downstream side of a pipe in accordance with electric signals from the controller. The controller allows control of start of the closing operation of the open/close valve and start of suction operation of the suck back valve through application of the electric signals to the respective motors. This achieves simple adjustment of liquid cut-off.

Abstract: A substrate treating method includes a determining step for determining a treating condition for hydrophobizing a surface of a substrate, based on a target regarding a dissolved area size in a resist pattern, and a treating step for hydrophobizing the surface of the substrate with the treating condition determined in the determining step before forming resist film on the surface of the substrate.

Abstract: A coating apparatus includes an open/close valve having a motor that allows control of opening operation and closing operation in accordance with electric signals applied from a controller. The coating apparatus further includes a suck back valve having a motor that allows control of a volume variation in a flow path for suck back that is in communication with an upstream side and a downstream side of a pipe in accordance with electric signals from the controller. The controller allows control of start of the closing operation of the open/close valve and start of suction operation of the suck back valve through application of the electric signals to the respective motors. This achieves simple adjustment of liquid cut-off.

Abstract: A substrate is held and rotated in a horizontal attitude by a rotation holder. A coating liquid is supplied by a coating liquid supplier to a surface to be processed of the substrate rotated by the rotation holder. A first removal liquid is supplied by a first removal liquid supplier to a first annular region at a peripheral portion of the substrate rotated by the rotation holder before the coating liquid supplied by the coating liquid supplier loses fluidity. In this state, a supply position of the first removal liquid by the first removal liquid supplier is moved from an inner edge to an outer edge of the first annular region.

Abstract: Disclosed is a substrate treating method including a solvent supplying step of supplying a solvent to a center part of a substrate while increasing a rotation speed of the substrate. In the solvent supplying step, the solvent is successively supplied to the substrate until the solvent reaches a periphery edge of the substrate. With such a substrate treating method, the solvent is able to cover a substrate surface entirely with effective suppression of particles. In other words, a process of supplying the solvent to the substrate is performable with effectively improved quality.

Abstract: A substrate treating method includes a determining step for determining a treating condition for hydrophobizing a surface of a substrate, based on a target regarding a dissolved area size in a resist pattern, and a treating step for hydrophobizing the surface of the substrate with the treating condition determined in the determining step before forming resist film on the surface of the substrate.

Abstract: A coating apparatus includes an open/close valve having a motor that allows control of opening operation and closing operation in accordance with electric signals applied from a controller. The coating apparatus further includes a suck back valve having a motor that allows control of a volume variation in a flow path for suck back that is in communication with an upstream side and a downstream side of a pipe in accordance with electric signals. The controller allows control of start of the closing operation of the open/close valve and start of suction operation of the suck back valve through application of the electric signals to the motors, respectively. This achieves simple adjustment of liquid cut-off.

Abstract: A substrate is held and rotated in a horizontal attitude by a rotation holder. A coating liquid is supplied by a coating liquid supplier to a surface to be processed of the substrate rotated by the rotation holder. A first removal liquid is supplied by a first removal liquid supplier to a first annular region at a peripheral portion of the substrate rotated by the rotation holder before the coating liquid supplied by the coating liquid supplier loses fluidity. In this state, a supply position of the first removal liquid by the first removal liquid supplier is moved from an inner edge to an outer edge of the first annular region.

Abstract: Each chemical processing section includes a chemical liquid bottle, a buffer tank, a pump, a filter, a discharge valve and a discharge nozzle. A chemical liquid stored in the chemical liquid bottle is led to the discharge nozzle and is discharged from the discharge nozzle to a substrate. A cleaning processing section includes a solvent bottle, a cleaning liquid bottle, the buffer tank and the pump. A solvent stored in the solvent bottle, a cleaning liquid stored in the cleaning liquid bottle and a gas supplied from a gas supply source are selectively led to the discharge nozzle in each chemical liquid processing section.

Abstract: Each chemical processing section includes a chemical liquid bottle, a buffer tank, a pump, a filter, a discharge valve and a discharge nozzle. A chemical liquid stored in the chemical liquid bottle is led to the discharge nozzle and is discharged from the discharge nozzle to a substrate. A cleaning processing section includes a solvent bottle, a cleaning liquid bottle, the buffer tank and the pump. A solvent stored in the solvent bottle, a cleaning liquid stored in the cleaning liquid bottle and a gas supplied from a gas supply source are selectively led to the discharge nozzle in each chemical liquid processing section.

Abstract: After a solvent is discharged onto a substrate in a period from a time point t0 to a time point t1, rotation of the substrate is started at a time point t2. A resist liquid is discharged onto a center portion of a target surface of the substrate at a time point t3. A rotation speed of the substrate starts to decrease at a time point t4, and attains a first speed after a certain period of time. The discharge of the resist liquid is stopped at a time point t5. The rotation of the substrate is accelerated in a period from a time point t6 to a time point t7, and the rotation speed of the substrate attains a second speed at the time point t7. The rotation of the substrate is decelerated in a period from the time point t7 to a time point t8, and the rotation speed of the substrate attains a third speed at the time point t8.

Abstract: After a solvent is discharged onto a substrate in a period from a time point t0 to a time point t1, rotation of the substrate is started at a time point t2. A resist liquid is discharged onto a center portion of a target surface of the substrate at a time point t3. A rotation speed of the substrate starts to decrease at a time point t4, and attains a first speed after a certain period of time. The discharge of the resist liquid is stopped at a time point t5. The rotation of the substrate is accelerated in a period from a time point t6 to a time point t7, and the rotation speed of the substrate attains a second speed at the time point t7. The rotation of the substrate is decelerated in a period from the time point t7 to a time point t8, and the rotation speed of the substrate attains a third speed at the time point t8.