Abstract: A sensor capable of detecting detection targets that are necessary to be detected with high sensitivity is provided. It comprises a field-effect transistor 1A having a substrate 2, a source electrode 4 and a drain electrode 5 provided on said substrate 2, and a channel 6 forming a current path between said source electrode 4 and said drain electrode 5; wherein said field-effect transistor 1A comprises: an interaction-sensing gate 9 for immobilizing thereon a specific substance 10 that is capable of selectively interacting with the detection targets; and a gate 7 applied a voltage thereto so as to detect the interaction by the change of the characteristic of said field-effect transistor 1A.

Abstract: An organic electroluminescent device of the present invention comprising comprises, as stacked on a baseplate, at least, a first conductive layer, a charge injection and transport layer, a light-emitting layer, and a second conductive layer, wherein (1) the charge injection and transport layer includes a charge injection layer in contact with the first conductive layer, (2) the charge injection and transport layer has a thickness ranging from 130 to 1000 nm, (3) the charge injection layer contains a crosslinked aromatic amine polymer, and the baseplate is a glass baseplate, and the minimum value of a waviness tangent for the surface of the glass baseplate towards the first conductive layer is equal to or more than 4.00×10?6, or a maximum value of the waviness tangent is equal to or more than 22×10?6.

Abstract: A sensor capable of detecting detection targets that are necessary to be detected with high sensitivity is provided. It comprises a field-effect transistor 1A having a substrate 2, a source electrode 4 and a drain electrode 5 provided on said substrate 2, and a channel 6 forming a current path between said source electrode 4 and said drain electrode 5; wherein said field-effect transistor 1A comprises: an interaction-sensing gate 9 for immobilizing thereon a specific substance 10 that is capable of selectively interacting with the detection targets; and a gate 7 applied a voltage thereto so as to detect the interaction by the change of the characteristic of said field-effect transistor 1A.

Abstract: A method of detecting a detection target using a sensor requires a sensor having a transistor selected from the group of field-effect transistors or single electron transistors. The transistor includes a substrate, a source electrode disposed on the substrate and a drain electrode disposed on the substrate, and a channel forming a current path between the source electrode and the drawing electrode; an interaction-sensing gate comprising a specific substance; and a voltage gate. The method includes (a) providing the detection target on the interaction-sensing gate; (b) setting the gate voltage in the voltage gate at a predetermined level; (c) selectively interacting the specific substance with the detection target; (d) when the detection target interacts with the specific substance, changing a gate voltage in the voltage gate to adjust a characteristic of the transistor; and (e) measuring a change in the characteristic of the transistor to determine a presence of the detection target.

Abstract: A field-effect transistor or a single electron transistor is used as sensors for detecting a detection target such as a biological compound. A substrate has a first side and a second side, the second side being opposed to the first side. A source electrode is disposed on the first side of the substrate and a drain electrode disposed on the first side of the substrate, and a channel forms a current path between the source electrode and the drain electrode. An interaction-sensing gate is disposed on the second side of the substrate, the interaction-sensing gate having a specific substance that is capable of selectively interacting with the detection target. A gate for applying a gate voltage adjusts a characteristic of the transistor as the detection target changes the characteristic of the transistor when interacting with the specific substance.

Abstract: A sensor capable of detecting detection targets that are necessary to be detected with high sensitivity is provided. It comprises a field-effect transistor 1A having a substrate 2, a source electrode 4 and a drain electrode 5 provided on said substrate 2, and a channel 6 forming a current path between said source electrode 4 and said drain electrode 5; wherein said field-effect transistor 1A comprises: an interaction-sensing gate 9 for immobilizing thereon a specific substance 10 that is capable of selectively interacting with the detection targets; and a gate 7 applied a voltage thereto so as to detect the interaction by the change of the characteristic of said field-effect transistor 1A.

Abstract: A method, an apparatus, and a computer program, which can suppress a low frequency range component with a small amount of calculation, and can achieve a noise suppression of high quality, are provided. The noise superposed in a desired signal of an input signal is suppressed by converting the input signal to a frequency domain signal; correcting an amplitude of the frequency domain signal to obtain an amplitude corrected signal; obtaining an estimated noise by using the amplitude corrected signal; determining a suppression coefficient by using the estimated noise and the amplitude corrected signal; and weighting the amplitude corrected signal with the suppression coefficient.

Abstract: A method, an apparatus, and a computer program, which can suppress a low frequency range component with a small amount of calculation, and can achieve a noise suppression of high quality, are provided. The noise superposed in a desired signal of an input signal is suppressed by converting the input signal to a frequency domain signal; correcting an amplitude of the frequency domain signal to obtain an amplitude corrected signal; obtaining an estimated noise by using the amplitude corrected signal; determining a suppression coefficient by using the estimated noise and the amplitude corrected signal; and weighting the amplitude corrected signal with the suppression coefficient.

Abstract: A method, an apparatus, and a computer program, which can suppress a low frequency range component with a small amount of calculation, and can achieve a noise suppression of high quality, are provided. The noise superposed in a desired signal of an input signal is suppressed by converting the input signal to a frequency domain signal; correcting an amplitude of the frequency domain signal to obtain an amplitude corrected signal; obtaining an estimated noise by using the amplitude corrected signal; determining a suppression coefficient by using the estimated noise and the amplitude corrected signal; and weighting the amplitude corrected signal with the suppression coefficient.

Abstract: A method of detecting a detection target using a sensor requires a sensor having a transistor selected from the group of field-effect transistors or single electron transistors. The transistor includes a substrate, a source electrode disposed on the substrate and a drain electrode disposed on the substrate, and a channel forming a current path between the source electrode and the drawing electrode; an interaction-sensing gate comprising a specific substance; and a voltage gate. The method includes (a) providing the detection target on the interaction-sensing gate; (b) setting the gate voltage in the voltage gate at a predetermined level; (c) selectively interacting the specific substance with the detection target; (d) when the detection target interacts with the specific substance, changing a gate voltage in the voltage gate to adjust a characteristic of the transistor; and (e) measuring a change in the characteristic of the transistor to determine a presence of the detection target.

Abstract: A method, an apparatus, and a computer program, which can suppress a low frequency range component with a small amount of calculation, and can achieve a noise suppression of high quality, are provided. The noise superposed in a desired signal of an input signal is suppressed by converting the input signal to a frequency domain signal; correcting an amplitude of the frequency domain signal to obtain an amplitude corrected signal; obtaining an estimated noise by using the amplitude corrected signal; determining a suppression coefficient by using the estimated noise and the amplitude corrected signal; and weighting the amplitude corrected signal with the suppression coefficient.

Abstract: A field-effect transistor or a single electron transistor is used as sensors for detecting a detection target such as a biological compound. A substrate has a first side and a second side, the second side being opposed to the first side. A source electrode is disposed on the first side of the substrate and a drain electrode disposed on the first side of the substrate, and a channel forms a current path between the source electrode and the drain electrode. An interaction-sensing gate is disposed on the second side of the substrate, the interaction-sensing gate having a specific substance that is capable of selectively interacting with the detection target. A gate for applying a gate voltage adjusts a characteristic of the transistor as the detection target changes the characteristic of the transistor when interacting with the specific substance.

Abstract: A method, an apparatus, and a computer program, which can suppress a low frequency range component with a small amount of calculation, and can achieve a noise suppression of high quality, are provided. The noise superposed in a desired signal of an input signal is suppressed by converting the input signal to a frequency domain signal; correcting an amplitude of the frequency domain signal to obtain an amplitude corrected signal; obtaining an estimated noise by using the amplitude corrected signal; determining a suppression coefficient by using the estimated noise and the amplitude corrected signal; and weighting the amplitude corrected signal with the suppression coefficient.

Abstract: A method, an apparatus, and a computer program, which can suppress a low frequency range component with a small amount of calculation, and can achieve a noise suppression of high quality, are provided. The noise superposed in a desired signal of an input signal is suppressed by converting the input signal to a frequency domain signal; correcting an amplitude of the frequency domain signal to obtain an amplitude corrected signal; obtaining an estimated noise by using the amplitude corrected signal; determining a suppression coefficient by using the estimated noise and the amplitude corrected signal; and weighting the amplitude corrected signal with the suppression coefficient.

Abstract: A sensor capable of detecting detection targets that are necessary to be detected with high sensitivity is provided. It comprises a field-effect transistor 1A having a substrate 2, a source electrode 4 and a drain electrode 5 provided on said substrate 2, and a channel 6 forming a current path between said source electrode 4 and said drain electrode 5; wherein said field-effect transistor 1A comprises: an interaction-sensing gate 9 for immobilizing thereon a specific substance 10 that is capable of selectively interacting with the detection targets; and a gate 7 applied a voltage thereto so as to detect the interaction by the change of the characteristic of said field-effect transistor 1A.

Abstract: In a noise suppression apparatus for suppressing noise contained in a speech signal, the speech signal is converted to a first vector of spectral speech components and a second vector of spectral speech components identical to the first vector. A vector of noise suppression coefficients is determined based on the first vector spectral speech components. A vector of estimated noise components is determined based on the first vector spectral speech components, and a speech section correction factor and a nonspeech section correction factor are calculated from the estimated noise components and the first-vector spectral speech components to produce a combined correction factor. The noise suppression coefficients are weighted by the combined correction factor to produce a vector of post-suppression coefficients. The second vector spectral speech components are weighted by the post-suppression coefficients to produce a vector of enhanced speech components.

Abstract: An electric motor control apparatus of this invention estimates changes in temperature of a semiconductor device to compute temperature change amplitude 108 based on an output current signal 105 computed from a current flowing through the semiconductor device of a switching circuit 5, an operating frequency signal and a carrier frequency signal by a temperature change estimation part 11, and makes conversion into the number of power cycles 110 corresponding to the temperature change amplitude 108 from power cycle curve data stored in a power cycle curve data storage part 14 and computes a thermal stress signal 111 by a thermal stress computation part 13, and does life estimation of the semiconductor device based on the thermal stress signal 111 and produces an output to a display part 16 as a life estimation result signal 112 by a life estimation part 15a.

Abstract: An electric motor control apparatus of this invention estimates changes in temperature of a semiconductor device to compute temperature change amplitude 108 based on an output current signal 105 computed from a current flowing through the semiconductor device of a switching circuit 5, an operating frequency signal and a carrier frequency signal by a temperature change estimation part 11, and makes conversion into the number of power cycles 110 corresponding to the temperature change amplitude 108 from power cycle curve data stored in a power cycle curve data storage part 14 and computes a thermal stress signal 111 by a thermal stress computation part 13, and does life estimation of the semiconductor device based on the thermal stress signal 111 and produces an output to a display part 16 as a life estimation result signal 112 by a life estimation part 15a.

Abstract: An active silencer provided in a pipe which has one end reaching the noise source and the other end open, the active silencer being provided with a sound generating means which is provided at the sidewall of the pipe facing inside the pipe, a sound collecting means which is provided outside the pipe close to the other end and which detects noise dissipated from the pipe opening, a phase leading means which outputs a lead phase output signal which is advanced from the phase of an output signal of the sound collecting means by a phase corresponding to a predetermined time determined by the distance between the sound generating means and the sound collecting means; and a drive means which outputs a signal constituting the lead phase output signla inverted in phase as a drive signal for the sound generating means, the predetermined time .tau. being set so that .tau.=L/C, wherein the distance between the sound generating means and the sound collecting means is L and the speed of sound is C.