Abstract: A storage includes a first opening section, a second opening section, and a moving section. An article used in a board working machine configured to perform predetermined board work on a board is received or delivered through the first opening section. The second opening section is an opening section different from the first opening section, and when reception work or delivery work of the article is performed through the first opening section, an article different from the article can be received or delivered through the second opening section. The moving section moves the article to a predetermined storage section when the article is received through the first opening section or the second opening section and moves the article stored in the storage section to the first opening section or the second opening section when the article is delivered.

Abstract: The present invention relates to: a jig for semiconductor production which is used for a CVD device in a semiconductor production process and contains a jig base and an SiC coating film formed on the jig base, in which the SiC coating film has a surface area ratio (surface area S2/surface area S1) between an apparent surface area S1 as calculated on the assumption that the surface is flat and free from unevenness and an actual surface area S2, of from 1.4 to 3.2; and a method for producing the jig for semiconductor production.

Abstract: The present invention relates to: a jig for semiconductor production which is used for a CVD device in a semiconductor production process and contains a jig base and an SiC coating film formed on the jig base, in which the SiC coating film has a surface area ratio (surface area S2/surface area S1) between an apparent surface area S1 as calculated on the assumption that the surface is flat and free from unevenness and an actual surface area S2, of from 1.4 to 3.2; and a method for producing the jig for semiconductor production.

Abstract: A semiconductor heat treatment member having a CVD-SiC film, which can reduce the frequency of cleaning steps and significantly improves the throughput of wafer process, is provided. A semiconductor heat treatment member is provided, which has a characteristic that when a Fourier amplitude spectrum of a cross-sectional profile of the CVD-SiC film deposited on the semiconductor heat treatment member obtained by observing the CVD-SiC film by a laser microscope with a magnification of from 400 to 600×, is integrated in ranges of 0.01???0.02 and 0.05???0.2, to obtain integral values of I1 and I2, respectively, then, I1 is at least 0.9 and 12 is at least 1.6.

Abstract: Terminal equipment for electronically making patent and utility patent applications. The terminal equipment converts various formats of text data generated by an external device into the internal format of the terminal equipment, retrieves the converted text data, merges the text data with a procedure, and transmits the procedure. The merging operation in which image data is merged with text data is simplified whereby the operator can make applications with a simple operation without special skill and knowledge when an application document is transmitted and received on line.

Abstract: A liquid heating apparatus 1 has a flow path 2 surrounded by a quartz glass tube 5 inside a tubular ceramic heater 4 which radiates infrared rays and has a PTC characteristic, and a flow path 3 which is formed between two quartz glass tubes 6, 7 which are disposed outside the tubular ceramics tube 4 in a coaxial manner. The liquid heating apparatus can effectively heat purified water used for manufacturing electronics-related products without contamination of the purified water, and provides a compact size while having a high heat capacity.