Patents by Inventor Masanori Komura
Masanori Komura has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11069407Abstract: A semiconductor memory device includes: first wirings; second wirings intersecting the first wirings; and memory cells. Each of the memory cells is respectively formed between one of the first wirings and one of the second wirings. In a set operation, a set pulse is supplied between one of the first wirings and one of the second wirings. In a reset operation, a reset pulse is supplied between one of the first wirings and one of the second wirings. In a first operation, a first pulse is supplied between one of the first wirings and one of the second wirings. the first pulse has an amplitude equal to or greater than the greater of an amplitude of the set pulse and an amplitude of the reset pulse and has a pulse width greater than a pulse width of the set pulse.Type: GrantFiled: March 3, 2020Date of Patent: July 20, 2021Assignee: KIOXIA CORPORATIONInventors: Takayuki Tsukamoto, Hironobu Furuhashi, Takeshi Sugimoto, Masanori Komura
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Patent number: 11011699Abstract: A semiconductor storage device includes first to third wirings extending in a first direction and adjacent in a second direction intersecting the first direction, fourth to sixth wirings extending in the second direction and adjacent in the first direction, memory cells each having one end connected to one of the first to third wirings and the other end connected to one of the fourth to sixth wirings, a circuit configured to output a first voltage, second and third voltages higher than the first voltage, a fourth voltage higher than the second voltage and the third voltage, and a fifth voltage higher than the fourth voltage. In a write operation for memory cells connected to the first and fourth wirings, the first, fourth, second, fifth and third voltages are transferred to the first, second, third, fourth, and fifth wirings, respectively, and the third voltage is transferred to the sixth wiring.Type: GrantFiled: March 3, 2020Date of Patent: May 18, 2021Assignee: KIOXIA CORPORATIONInventors: Masanori Komura, Takayuki Tsukamoto
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Publication number: 20210083183Abstract: A semiconductor storage device includes first to third wirings extending in a first direction and adjacent in a second direction intersecting the first direction, fourth to sixth wirings extending in the second direction and adjacent in the first direction, memory cells each having one end connected to one of the first to third wirings and the other end connected to one of the fourth to sixth wirings, a circuit configured to output a first voltage, second and third voltages higher than the first voltage, a fourth voltage higher than the second voltage and the third voltage, and a fifth voltage higher than the fourth voltage. In a write operation for memory cells connected to the first and fourth wirings, the first, fourth, second, fifth and third voltages are transferred to the first, second, third, fourth, and fifth wirings, respectively, and the third voltage is transferred to the sixth wiring.Type: ApplicationFiled: March 3, 2020Publication date: March 18, 2021Applicant: KIOXIA CORPORATIONInventors: Masanori KOMURA, Takayuki TSUKAMOTO
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Publication number: 20210074355Abstract: A semiconductor memory device includes: first wirings; second wirings intersecting the first wirings; and memory cells. Each of the memory cells is respectively formed between one of the first wirings and one of the second wirings. In a set operation, a set pulse is supplied between one of the first wirings and one of the second wirings. In a reset operation, a reset pulse is supplied between one of the first wirings and one of the second wirings. In a first operation, a first pulse is supplied between one of the first wirings and one of the second wirings. the first pulse has an amplitude equal to or greater than the greater of an amplitude of the set pulse and an amplitude of the reset pulse and has a pulse width greater than a pulse width of the set pulse.Type: ApplicationFiled: March 3, 2020Publication date: March 11, 2021Applicant: KIOXIA CORPORATIONInventors: Takayuki TSUKAMOTO, Hironobu FURUHASHI, Takeshi SUGIMOTO, Masanori KOMURA
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Patent number: 10192928Abstract: A semiconductor device according to an embodiment includes: a stacked body including a plurality of first conductive films stacked via an inter-layer insulating film; a first conductive body contacting the stacked body to extend in a stacking direction; and a plurality of first insulating films in the same layers as the first conductive films and disposed between the first conductive body and the first conductive films, the first conductive body including a projecting part that projects along tops of one of the first insulating films and one of the first conductive films, and a side surface of the projecting part contacting an upper surface of the one of the first conductive films.Type: GrantFiled: September 15, 2017Date of Patent: January 29, 2019Assignee: TOSHIBA MEMORY CORPORATIONInventors: Natsuki Fukuda, Mutsumi Okajima, Atsushi Oga, Toshiharu Tanaka, Takeshi Yamaguchi, Takeshi Takagi, Masanori Komura
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Publication number: 20180006089Abstract: A semiconductor device according to an embodiment includes: a stacked body including a plurality of first conductive films stacked via an inter-layer insulating film; a first conductive body contacting the stacked body to extend in a stacking direction; and a plurality of first insulating films in the same layers as the first conductive films and disposed between the first conductive body and the first conductive films, the first conductive body including a projecting part that projects along tops of one of the first insulating films and one of the first conductive films, and a side surface of the projecting part contacting an upper surface of the one of the first conductive films.Type: ApplicationFiled: September 15, 2017Publication date: January 4, 2018Applicant: TOSHIBA MEMORY CORPORATIONInventors: Natsuki FUKUDA, Mutsumi OKAJIMA, Atsushi OGA, Toshiharu TANAKA, Takeshi YAMAGUCHI, Takeshi TAKAGI, Masanori KOMURA
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Patent number: 9812507Abstract: A semiconductor memory device according to an embodiment comprises: a semiconductor substrate which extends in first and second directions; first wiring lines which are arranged in a third direction, and which extend in the first direction; second wiring lines which are arranged in the first direction and extend in the third direction; and memory cells disposed at intersections of the first wiring lines and the second wiring lines, one of the memory cells including a first film and a second film whose permittivity is different from that of the first film which are stacked in the second direction between one of the first wiring lines and one of the second wiring lines, and the second films of two of the memory cells adjacent in the third direction being separated between the two memory cells.Type: GrantFiled: August 3, 2016Date of Patent: November 7, 2017Assignee: TOSHIBA MEMORY CORPORATIONInventors: Masanori Komura, Takeshi Takagi
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Patent number: 9768233Abstract: A semiconductor device according to an embodiment includes: a stacked body including a plurality of first conductive films stacked via an inter-layer insulating film; a first conductive body facing the stacked body to extend in a stacking direction; and a plurality of first insulating films in the same layers as the first conductive films and disposed between the first conductive body and the first conductive films, the first conductive body including a projecting part that projects along tops of one of the first insulating films and one of the first conductive films, and a lower surface of the projecting part contacting an upper surface of the one of the first conductive films.Type: GrantFiled: March 18, 2016Date of Patent: September 19, 2017Assignee: TOSHIBA MEMORY CORPORATIONInventors: Natsuki Fukuda, Mutsumi Okajima, Atsushi Oga, Toshiharu Tanaka, Takeshi Yamaguchi, Takeshi Takagi, Masanori Komura
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Publication number: 20170263682Abstract: A semiconductor memory device according to an embodiment comprises: a semiconductor substrate which extends in first and second directions; first wiring lines which are arranged in a third direction, and which extend in the first direction; second wiring lines which are arranged in the first direction and extend in the third direction; and memory cells disposed at intersections of the first wiring lines and the second wiring lines, one of the memory cells including a first film and a second film whose permittivity is different from that of the first film which are stacked in the second direction between one of the first wiring lines and one of the second wiring lines, and the second films of two of the memory cells adjacent in the third direction being separated between the two memory cells.Type: ApplicationFiled: August 3, 2016Publication date: September 14, 2017Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Masanori KOMURA, Takeshi TAKAGI
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Publication number: 20170256588Abstract: A semiconductor device according to an embodiment includes: a stacked body including a plurality of first conductive films stacked via an inter-layer insulating film; a first conductive body facing the stacked body to extend in a stacking direction; and a plurality of first insulating films in the same layers as the first conductive films and disposed between the first conductive body and the first conductive films, the first conductive body including a projecting part that projects along tops of one of the first insulating films and one of the first conductive films, and a lower surface of the projecting part contacting an upper surface of the one of the first conductive films.Type: ApplicationFiled: March 18, 2016Publication date: September 7, 2017Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Natsuki FUKUDA, Mutsumi OKAJIMA, Atsushi OGA, Toshiharu TANAKA, Takeshi YAMAGUCHI, Takeshi TAKAGI, Masanori KOMURA
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Patent number: 8222626Abstract: A semiconductor memory device includes first and second memory cells each including a variable resistance element and a diode and having a pillar shape, and an insulating layer provided between the first memory cell and the second memory cell and including a void. A central portion of the diode has a smaller width than widths of upper and lower portions of the diode.Type: GrantFiled: February 12, 2010Date of Patent: July 17, 2012Assignee: Kabushiki Kaisha ToshibaInventors: Mitsuru Sato, Masanori Komura, Hiroshi Kanno, Kenichi Murooka
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Patent number: 8044456Abstract: A cell array includes a memory cell region in which memory cells are formed and a peripheral region that is provided around the memory cell region. In the memory cell region, first lines are extended in parallel with a first direction, and the first lines are repeatedly formed at first intervals in a second direction orthogonal to the first direction. In the peripheral region, each of the first lines located at (4n?3)-th (n is a positive integer) and (4n?2)-th positions in the second direction from a predetermined position has a contact connecting portion on one end side in the first direction of the first line. In the peripheral region, each of the first lines located at (4n?1)-th and 4n-th positions in the second direction from the predetermined position has the contact connecting portion on the other end side in the first direction of the first line. The contact connecting portion is formed so as to contact a contact plug extended in a laminating direction.Type: GrantFiled: August 12, 2009Date of Patent: October 25, 2011Assignee: Kabushiki Kaisha ToshibaInventors: Hiroyuki Nagashima, Hirofumi Inoue, Hideyuki Tabata, Masanori Komura, Eiji Ito
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Patent number: 7995374Abstract: A memory cell comprises a variable resistance film; a first conductive film having one surface contacted with one surface of the variable resistance film; and a second conductive film having one surface contacted with another surface of the variable resistance film. A width of the first conductive film or the second conductive film in a direction orthogonal to a direction that a current flows in the first conductive film or the second conductive film is smaller than a width of the variable resistance film in a direction orthogonal to a direction that a current flows in the variable resistance film. The width of the first conductive film and the second conductive film is smaller than a width of the first line and the second line in a direction orthogonal to a direction that a current flows in the first line and the second line.Type: GrantFiled: November 13, 2009Date of Patent: August 9, 2011Assignee: Kabushiki Kaisha ToshibaInventors: Masanori Komura, Mitsuru Sato, Kenichi Murooka, Motoya Kishida
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Publication number: 20100238704Abstract: A memory cell comprises a variable resistance film; a first conductive film having one surface contacted with one surface of the variable resistance film; and a second conductive film having one surface contacted with another surface of the variable resistance film. A width of the first conductive film or the second conductive film in a direction orthogonal to a direction that a current flows in the first conductive film or the second conductive film is smaller than a width of the variable resistance film in a direction orthogonal to a direction that a current flows in the variable resistance film. The width of the first conductive film and the second conductive film is smaller than a width of the first line and the second line in a direction orthogonal to a direction that a current flows in the first line and the second line.Type: ApplicationFiled: November 13, 2009Publication date: September 23, 2010Applicant: Kabushiki Kaisha ToshibaInventors: Masanori Komura, Mitsuru Sato, Kenichi Murooka, Motoya Kishida
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Publication number: 20100202186Abstract: A semiconductor memory device includes first and second memory cells each including a variable resistance element and a diode and having a pillar shape, and an insulating layer provided between the first memory cell and the second memory cell and including a void. A central portion of the diode has a smaller width than widths of upper and lower portions of the diode.Type: ApplicationFiled: February 12, 2010Publication date: August 12, 2010Inventors: Mitsuru SATO, Masanori Komura, Hiroshi Kanno, Kenichi Murooka
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Publication number: 20100038616Abstract: A cell array includes a memory cell region in which memory cells are formed and a peripheral region that is provided around the memory cell region. In the memory cell region, first lines are extended in parallel with a first direction, and the first lines are repeatedly formed at first intervals in a second direction orthogonal to the first direction. In the peripheral region, each of the first lines located at (4n?3)-th (n is a positive integer) and (4n?2)-th positions in the second direction from a predetermined position has a contact connecting portion on one end side in the first direction of the first line. In the peripheral region, each of the first lines located at (4n?1)-th and 4n-th positions in the second direction from the predetermined position has the contact connecting portion on the other end side in the first direction of the first line. The contact connecting portion is formed so as to contact a contact plug extended in a laminating direction.Type: ApplicationFiled: August 12, 2009Publication date: February 18, 2010Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Hiroyuki NAGASHIMA, Hirofumi Inoue, Hideyuki Tabata, Masanori Komura, Eiji Ito
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Publication number: 20090134431Abstract: A nonvolatile semiconductor storage apparatus includes: a plurality of first wirings; a plurality of second wirings which cross the plurality of first wirings; and a memory cell which is connected between both the wirings at an intersection of the first and second wirings, and includes a variable resistive element operative to store information according to a change in resistance and includes a variable resistive element, wherein the memory cell is formed so that a cross section area of the variable resistive element becomes smaller than a cross section area of the other portion.Type: ApplicationFiled: November 21, 2008Publication date: May 28, 2009Applicant: Kabushiki Kaisha ToshibaInventors: Hideyuki TABATA, Hiroyuki NAGASHIMA, Hirofumi INOUE, Kohichi KUBO, Masanori KOMURA
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Publication number: 20060076870Abstract: A discharge lamp is constructed by attaching a base to an outer tube, the base has a spiral feed member and a dotted feed member, and the shortest creeping clearance distance between the spiral feed member and the dotted feed member is defined to at least 6.0 mm. A socket for discharge lamp is constructed by providing a spiral receiving member and a contact piece in an insulating socket body, and the shortest clearance distance between the spiral receiving member and the contact piece is defined to at least 5.0 mm. A socket for discharge lamp is constructed by providing a spiral receiving member and a contact piece in an insulating socket body, and the shortest clearance distance between a socket reference line and the contact piece is defined to at least 19.6 mm.Type: ApplicationFiled: February 19, 2004Publication date: April 13, 2006Applicants: Ushio Denki Kabushiki Kaisha, Matsushita Electric Industrial Co., Ltd.Inventors: Kazuya Kurokawa, Masanori Komura, Shiki Nakayama, Shunsuke Kakisaka
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Patent number: 6799860Abstract: A lighting unit for illuminating a liquid crystal panel includes a point light source and a light guide. The light guide includes a first side surface extending in a direction x and having a light incidence portion facing the light source, a second side surface extending in a direction y perpendicular to the direction x, a third side surface spaced from the second side surface in the direction x, and an outlet surface for exit of light. The second side face is formed with a plurality of recesses each including a slant surface for causing light emitted from the light source to be reflected toward the third side surface. The recesses progressively increase in depth as they are positioned farther from the light source.Type: GrantFiled: September 30, 2002Date of Patent: October 5, 2004Assignee: Rohm Co., Ltd.Inventors: Yasunari Nakaoka, Takayuki Ishihara, Masanori Komura
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Patent number: RE45480Abstract: A cell array includes a memory cell region in which memory cells are formed and a peripheral region that is provided around the memory cell region. In the memory cell region, first lines are extended in parallel with a first direction, and the first lines are repeatedly formed at first intervals in a second direction orthogonal to the first direction. In the peripheral region, each of the first lines located at (4n?3)-th (n is a positive integer) and (4n?2)-th positions in the second direction from a predetermined position has a contact connecting portion on one end side in the first direction of the first line. In the peripheral region, each of the first lines located at (4n?1)-th and 4n-th positions in the second direction from the predetermined position has the contact connecting portion on the other end side in the first direction of the first line. The contact connecting portion is formed so as to contact a contact plug extended in a laminating direction.Type: GrantFiled: October 24, 2013Date of Patent: April 21, 2015Assignee: Kabushiki Kaisha ToshibaInventors: Hiroyuki Nagashima, Hirofumi Inoue, Hideyuki Tabata, Masanori Komura, Eiji Ito