Abstract: The present invention relates to a dielectric element such as a thin-film capacitor including a dielectric film. The dielectric film contains a main component represented by the general formula (Ba1-xCax)z(Ti1-yZry)O3 wherein 0<x?0.500, 0<y?0.350, and 0.900?z?0.995. The dielectric film includes a layer containing columnar crystal grains and a layer containing spherical crystal grains, and contains as a sub-component at least one of divalent metal elements and trivalent metal elements.

Abstract: A thin-film dielectric having a higher dielectric constant than usual ones and not requiring a special single crystal substrate, and a large-capacity thin-film capacitor element using the thin-film dielectric, in which a BaTiO3-based perovskite solid solution and a KNbO3-based perovskite solid solution are alternately formed to form a crystal structure gradient region where a lattice constant continuously changes at the interface, and thus crystal lattice strain occurs, thereby permitting the production of a thin-film dielectric having a high dielectric constant; also, a large-capacity thin-film capacitor element can be produced by using the thin-film dielectric of the present invention.

Abstract: The present invention relates to a dielectric element such as a thin-film capacitor including a dielectric film. The dielectric film contains a main component represented by the general formula (Ba1-xCax)z(Ti1-yZry)O3 wherein 0<x?0.500, 0<y?0.350, and 0.900?z?0.995. The dielectric film includes a layer containing columnar crystal grains and a layer containing spherical crystal grains, and contains as a sub-component at least one of divalent metal elements and trivalent metal elements.

Abstract: A dielectric film contains as a main component a dielectric composition represented by the general formula (Ba1-xCax)z(Ti1-yZry)O3 wherein 0.001?x?0.400, 0.001?y?0.400, and 0.900?z<0.995. In an X-ray diffraction pattern of the dielectric composition, the dielectric composition has the relation 0.00°?2?c?2?t<0.20° between (001) plane diffraction peak position 2?t of a tetragonal structure represented by the general formula and (100) plane diffraction peak position 2?c of a cubic structure represented by the general formula.

Abstract: A dielectric film contains as a main component a dielectric composition represented by the general formula (Ba1-xCax)z(Ti1-yZry)O3 wherein 0.001?x?0.400, 0.001?y?0.400, and 0.900?z<0.995. In an X-ray diffraction pattern of the dielectric composition, the dielectric composition has the relation 0.00°?2?c?2?t<0.20° between (001) plane diffraction peak position 2?t of a tetragonal structure represented by the general formula and (100) plane diffraction peak position 2?c of a cubic structure represented by the general formula.

Abstract: The present invention provides a thin-film dielectric having a higher dielectric constant than usual ones and not requiring a special single crystal substrate, and also provides a large-capacity thin-film capacitor element using the thin-film dielectric. A BaTiO3-based perovskite solid solution and a KNbO3-based perovskite solid solution are alternately formed to form a crystal structure gradient region where a lattice constant continuously changes at the interface, and thus crystal lattice strain occurs, thereby permitting the production of a thin-film dielectric having a high dielectric constant. Also, a large-capacity thin-film capacitor element can be produced by using the thin-film dielectric of the present invention.

Abstract: A next-generation optical recording medium has two or more information layers which include a translucent information layer. The translucent information layer has a recording film and an interface layer, provided adjacent to the recording film on the side of the light incident surface. The recording film is made of a phase change material having SbxTeyGez elements and elemental ratios. Y satisfies 5?y?15 and z satisfies 5?z?15. When In having an elemental ratio of a is further added and x+y+z+a=100 holds, a satisfies 4?a?15. The interface layer comprises of ZrO2—Cr2O3 film thickness of which is in a range of from 2 nm to 10 nm. When ZrO2:Cr2O3?C:D (mol %), the compositional ratios ZrO2 and Cr2O3 in the ZrO2—Cr2O3 film, holds, the C satisfies 20?C?90, and the D satisfies 10?D?80, and the C and the D satisfy C+D=100. The ZrO2 is stabilized ZrO2 which contains Y2O3, when ZrO2:Y2O3=(100?X):X (mol %), the compositional ratios ZrO2 and Y2O3 in the stabilized ZrO2, holds, the X satisfies 2?X?10.

Abstract: An optical recording medium is provided which includes two or more information layers in which an Sb-based eutectic material is used as the material for a recording film of a translucent information layer. There is also provided a recording film material for the optical recording medium. The translucent information layer is configured to include a recording film formed of a phase change material SbxGeyInz containing Sb, Ge, and In in an atomic ratio of x:y:z, where 5?y?15 and 4?z?15 are satisfied. The recording film further includes Te in an atomic ratio of a, provided that x+y+z+a=100 and 4?a?15 are satisfied. An interface layer formed of a ZrO2—Cr2O3 film having a thickness of 2 nm or more and 10 nm or less is provided on the laser beam incident side of the recording film. When the compositional ratio of the ZrO2—Cr2O3 film is given by ZrO2:Cr2O3=B:C (mol %), 20?B?90, 10?C?80, and B+C=100 are satisfied.

Abstract: A rewritable phase-change optical recording medium is provided, which includes a substrate, a first information layer, a spacer layer, a second information layer, and a cover layer. The second information layer includes a recording film containing Sb as a main component and V or V and In as second components. When an amorphous mark formed in the recording film is irradiated with a reproduction beam, crystallization of the amorphous mark occurs only in a central portion in the width direction of the amorphous mark. The width direction is orthogonal to the scanning direction of the laser beam. The recording film is formed of a material that exhibits a change in degree of modulation of 5% or less when recorded information is repeatedly reproduced. The change in degree of modulation is a change from when the number of times of reproduction is 100,000 to when it is 400,000.

Abstract: A rewritable phase-change optical recording medium is provided, which includes a substrate, a first information layer, a spacer layer, a second information layer, and a cover layer. The second information layer includes a recording film containing Sb as a main component and V or V and In as second components. When an amorphous mark formed in the recording film is irradiated with a reproduction beam, crystallization of the amorphous mark occurs only in a central portion in the width direction of the amorphous mark. The width direction is orthogonal to the scanning direction of the laser beam. The recording film is formed of a material that exhibits a change in degree of modulation of 5% or less when recorded information is repeatedly reproduced. The change in degree of modulation is a change from when the number of times of reproduction is 100,000 to when it is 400,000.

Abstract: An optical recording medium is provided which includes two or more information layers in which an Sb-based eutectic material is used as the material for a recording film of a translucent information layer. There is also provided a recording film material for the optical recording medium. The translucent information layer is configured to include a recording film formed of a phase change material SbxGeyInz containing Sb, Ge, and In in an atomic ratio of x:y:z, where 5?y?15 and 4?z?15 are satisfied. The recording film further includes Te in an atomic ratio of a, provided that x+y+z+a=100 and 4?a?15 are satisfied. An interface layer formed of a ZrO2—Cr2O3 film having a thickness of 2 nm or more and 10 nm or less is provided on the laser beam incident side of the recording film. When the compositional ratio of the ZrO2—Cr2O3 film is given by ZrO2:Cr2O3=B:C (mol %), 20?B?90, 10?C?80, and B+C=100 are satisfied.

Abstract: A next-generation optical recording medium has two or more information layers which include a translucent information layer. The translucent information layer has a recording film and an interface layer, provided adjacent to the recording film on the side of the light incident surface. The recording film is made of a phase change material having SbxTeyGez elements and elemental ratios. Y satisfies 5?y?15 and z satisfies 5?z?15. When In having an elemental ratio of a is further added and x+y+z+a=100 holds, a satisfies 4?a?15. The interface layer comprises of ZrO2—Cr2O3 film thickness of which is in a range of from 2 nm to 10 nm. When ZrO2:Cr2O3?C:D (mol %), the compositional ratios ZrO2 and Cr2O3 in the ZrO2—Cr2O3 film, holds, the C satisfies 20?C?90, and the D satisfies 10?D?80, and the C and the D satisfy C+D=100. The ZrO2 is stabilized ZrO2 which contains Y2O3, when ZrO2:Y2O3=(100-X):X (mol %), the compositional ratios ZrO2 and Y2O3 in the stabilized ZrO2, holds, the X satisfies 2?X?10.

Abstract: It is an object of the present invention to provide a method for recording information in an optical recording medium with a good direct overwriting characteristic. The method for recording information in an optical recording medium according to the present invention forms record marks in a recording layer containing a phase change material by modulating the power of a laser beam between a plurality of power levels including a recording power Pw, an erasing power Pe and ground power Pb. The erasing power Pe is set to a level within a region where a reflection coefficient of a region between neighboring record marks approaches a reflection coefficient of the record mark as the erasing power Pe increases. As a result, a good overwriting characteristic can be obtained when data are recorded at a high linear velocity.

Abstract: It is an object of the present invention to provide a method for recording information in an optical recording medium with a good direct overwriting characteristic. The method for recording information in an optical recording medium according to the present invention forms record marks in a recording layer containing a phase change material by modulating the power of a laser beam between a plurality of power levels including a recording power Pw, an erasing power Pe and ground power Pb. The erasing power Pe is set to a level within a region where a reflection coefficient of a region between neighboring record marks approaches a reflection coefficient of the record mark as the erasing power Pe increases. As a result, a good overwriting characteristic can be obtained when data are recorded at a high linear velocity.

Abstract: A vacuum processing apparatus 50 is provided with a bypass line 52 for causing a vacuum transfer chamber 4 and a load-lock chamber 12 to communicate with each other, and a bypass opening and shutting valve 54 for opening and shutting the corresponding bypass line 52, wherein by opening the bypass opening and shutting valve 54, a pressure-reduced state at the vacuum transfer chamber 4 side can be shifted to the load-lock chamber 12 side, and the pressure reduction of the load-lock chamber 12 can be carried out in a short time.

Abstract: A vacuum processing apparatus 50 is provided with a bypass line 52 for causing a vacuum transfer chamber 4 and a load-lock chamber 12 to communicate with each other, and a bypass opening and shutting valve 54 for opening and shutting the corresponding bypass line 52, wherein by opening the bypass opening and shutting valve 54, a pressure-reduced state at the vacuum transfer chamber 4 side can be shifted to the load-lock chamber 12 side, and the pressure reduction of the load-lock chamber 12 can be carried out in a short time.

Abstract: An optical recording medium is provided. The medium has a phase change recording layer wherein amorphous recorded marks are to be formed, and overwriting is conducted by irradiating a laser beam whose intensity is modulated to have at least recording power level and erasing power level. When the power level at which maximum erasability is achieved in DC erasing operation to crystallize the amorphous recorded marks by DC laser beam irradiation is designated an optimal erasing power level, difference between the DC erasability upon DC laser beam irradiation at a power level not less than said optimal erasing power level and not exceeding the recording power level in the overwriting and said maximum erasability is less than 10 dB in the medium of the present invention. A medium wherein such difference is less than 10 dB exhibits excellent overwrite shelf property.

Abstract: It is an object of the present invention to provide a method for recording information in an optical recording medium with a good direct overwriting characteristic. The method for recording information in an optical recording medium according to the present invention forms record marks in a recording layer containing a phase change material by modulating the power of a laser beam between a plurality of power levels including a recording power Pw, an erasing power Pe and ground power Pb. The erasing power Pe is set to a level within a region where a reflection coefficient of a region between neighboring record marks approaches a reflection coefficient of the record mark as the erasing power Pe increases. As a result, a good overwriting characteristic can be obtained when data are recorded at a high linear velocity.

Abstract: A vacuum processing apparatus 50 is provided with a bypass line 52 for causing a vacuum transfer chamber 4 and a load-lock chamber 12 to communicate with each other, and a bypass opening and shutting valve 54 for opening and shutting the corresponding bypass line 52, wherein by opening the bypass opening and shutting valve 54, a pressure-reduced state at the vacuum transfer chamber 4 side can be shifted to the load-lock chamber 12 side, and the pressure reduction of the load-lock chamber 12 can be carried out in a short time.

Abstract: An optical recording medium comprising a substrate, at least one dielectric layer and a phase change type recording layer. In overwriting, the recording medium should satisfy the condition V.sub.OW /V.sub.OP <1, preferably 0.5.ltoreq.V.sub.OW /V.sub.OP <0.95, where V.sub.OP is the optimum linear velocity and V.sub.OW is a linear velocity for overwriting. This enables the erasability of recorded marks on the medium to be at least 26 dB after the recording medium with the recorded marks has been stored for at least 100 hours at 60 to 80.degree. C.