Abstract: An epitaxial growth furnace is provided for effecting the formation of an epitaxial layer on the surface of a semiconductor wafer by CVD in a reaction chamber of the furnace. The furnace comprises a wafer holder having an opening for exposing a surface area of the wafer which is subject to epitaxial growth, an opening flange adapted for engagement with a chamfered tapered face of a whole peripheral edge of the wafer on the side of said surface area thereof, and a plurality of jaws for detachably engaging with an outer periphery of the wafer on a back surface side of said surface area.

Abstract: Disclosed is a compact apparatus for manufacturing semiconductor wafers, which is aimed at complete removing of moisture from the wafers after final cleaning while reducing the manufacturing time. The apparatus includes a cleaning chamber (1) for final cleaning, a storage chamber (3) for storing wafers, a transfer chamber (2) communicating with the both cleaning and storage chambers (1, 3), and formed in its upper wall with a heat-conducting window (7), a robot hand (5) and a robot arm (4) for transporting the wafer (W) from the cleaning chamber (1) to the storage chamber (3) within the transfer chamber, infrared lamps (6) arranged to face the window (7) outside the transfer chamber (2) so as to heat the wafer (W) in the course of transportation within the transfer chamber, gas supply ports (8) for producing a laminar flow of inert gas from the storage chamber (3) to the cleaning chamber (1) to expose wafers (W) with the gas, and exhaust ports (9) for exhausting the moisture removed from wafers.

Abstract: Disclosed is a method for manufacturing a semiconductor wafer having an epitxial layer on a surface thereof, by the steps of forming a pritective oxide film on a surface of a semiconductor wafer prior to loading of the wafer into an eptaxial growth furnace, removing the protective oxide film formed on the surface of the wafer by heating after the wafer is loaded in the furnace, and performing epitaxial growth of the epitaxial layer on the surface from which the protective oxide film is removed in the furnace. The protective oxide film is removed by heating the wafer in the furnace in an ambience of hydrogen gas at a pressure ranging from 0.0133×105 Pa to 1.013×105 Pa and at a temperature ranging from 800° C. to 1,000 ° C., or by heating the wafer in the furnace at a pressure of 5×106 Pa or under and at a temperature ranging from 800° C. to 1,000° C.

Abstract: An epitaxial growth furnace comprising first and second partition walls arranged within a reaction chamber, a first separate space surrounded by the partition walls and the inner wall surface of the reaction chamber, a second separate space partitioned by the partition walls so as to be isolated from the inner wall surface of the reaction chamber, a holding mechanism adapted to hold a pair of semiconductor wafers respectively on the first and second partition walls so that the principal surfaces of the pair of wafers face each other with spacing therebetween and are also exposed to the second separate space, and a pair of heaters for respectively irradiating radiant heat to the back surfaces of the two wafers.

Abstract: A method and apparatus for forming an epitaxial layer on a semiconductor wafer supported on a suscepter in an epitaxial growth furnace. Ther wafer to be processed is placed on the suscepter outside the furnace. The suscepter carrying the wafer is transferred into the furnace from the outside thereof and mounted in a loading position within the furnace. An epitaxial growth process is then performed on the wafer on the suscepter mounted in the loading position. After the completion of the growth process, the suscepter carrying the wafer thereon is removed from the furnace loading position and transferred to the outside of the furnace.

Abstract: A method of growing a single crystal thin film characterized by heating a silicon single crystal substrate placed in a reactor vessel, then while the temperature of the silicon single crystal substrate is 850.degree. C. or below, introducing a mixed gas composed of hydrogen fluoride gas and hydrogen gas into the reactor vessel for removing a native oxide film on a main surface of the silicon single crystal substrate in an ambient of hydrogen gas; and thereafter, growing a single crystal thin film by a vapor phase epitaxy on said main surface free from the native oxide film at a temperature of 1,000.degree. C. or below. With this method, both evaporation of a dopant caused by outdiffusion and autodoping can be suppressed with a substantial reduction of the processing time.