Abstract: An illumination device includes a first light source that emits first light having a first peak wavelength which is highest in intensity in a wavelength range from near-ultraviolet to green in an emission spectrum; a second light source that emits second light having a second peak wavelength which is highest in intensity in a wavelength range from near-ultraviolet to green in an emission spectrum, the second light illuminating a position identical to a position illuminated by the first light; and a detection device that detects whether an object is present at a given position, wherein the second peak wavelength is shorter than the first peak wavelength, and a luminous flux of the first light is decreased and a luminous flux of the second light is increased when the detection device detects that the object is present at the predetermined position.

Abstract: An illumination device includes a first light source that emits first light having a first peak wavelength which is highest in intensity in a wavelength range from near-ultraviolet to green in an emission spectrum; a second light source that emits second light having a second peak wavelength which is highest in intensity in a wavelength range from near-ultraviolet to green in an emission spectrum, the second light illuminating a position identical to a position illuminated by the first light; and a detection device that detects whether an object is present at a given position, wherein the second peak wavelength is shorter than the first peak wavelength, and a luminous flux of the first light is decreased and a luminous flux of the second light is increased when the detection device detects that the object is present at the predetermined position.

Abstract: A light emitting diode includes a GaN substrate having a C-plane as a lamination surface; an n-type GaN layer which is laminated on the GaN substrate and which includes a first n-type GaN layer, an n-type intermediate layer, and a second n-type GaN layer; and an AlGaN strain adjustment layer laminated on the n-type GaN layer. Furthermore, the light emitting diode includes a light-emitting layer which is laminated on the AlGaN strain adjustment layer and which has a multi-quantum well structure having well layers and barrier layers, which are made of InGaN having a lattice constant in an a-axis direction larger than that of the AlGaN strain adjustment layer; and a p-type AlGaN cladding layer laminated on the light emitting layer.