Abstract: An object of this invention is to provide an electrode for p-type SiC which can provide improved surface morphology and less thermal damage for a semiconductor crystal layer due to formation of an electrode. In this invention, a p-type electrode is manufactured to contain at least one selected from the group consisting of nickel (Ni), cobalt (Co), palladium (Pd) and platinum (Pt).

Abstract: A vibration diagnosis is performed by using a vibration mode interactive query section grasping vibration event of a machinery such as turbine rotor and characteristic feature thereof from detected data information, a vibration factor diagnosis section estimating a vibration factor based on the information from the vibration mode interactive query section, and a diagnosis result display section indicating the estimated vibration factor and a guidance for countermeasure to be taken against the vibration factor.

Abstract: It is intended to provide a multi-layered structure for fabricating an ohmic electrode for III-V compound semiconductors such as GaAs semiconductors which has practically satisfactory characteristics and an ohmic electrode obtained by using it. On a III-V compound semiconductor substrate such as an n+-type GaAs substrate, a non-single crystal semiconductor layer such as a non-single crystal In0.7Ga0.3As layer, a metal film such as a Ni film, a metal nitride film such as a WN film and a refractory metal film such as a W film are sequentially stacked by sputtering, etc. and subsequently patterned by lift-off, etc. to make a multi-layered structure for fabricating ohmic electrodes. The structure is annealed at 500 to 600° C., e.g. 550° C. for one second by, e.g. RTA method to fabricate an ohmic electrode.

Abstract: An AlN buffer layer 2; a silicon (Si)-doped GaN high-carrier-concentration n+ layer 3; an Si-doped n-type Al0.07Ga0.93N n-cladding layer 4; an Si-doped n-type GaN n-guide layer 5; an active layer 6 having a multiple quantum well (MQW) structure, and including a Ga0.9In0.1N well layer 61 (thickness: about 2 nm) and a Ga0.97In0.03N barrier layer 62 (thickness: about 4 nm), the layers 61 and 62 being laminated alternately; an Mg-doped GaN p-guide layer 7; an Mg-doped Al0.07Ga0.93N p-cladding layer 8; and an Mg-doped GaN p-contact layer 9 are successively formed on a sapphire substrate. A p-electrode 10 is formed of a film of titanium nitride (TiN) or tantalum nitride (TaN) (thickness: 50 nm). The contact resistance of this electrode is reduced through heat treatment.

Abstract: An AlN buffer layer 2; a silicon (Si)-doped GaN high-carrier-concentration n+ layer 3; an Si-doped n-type Al0.07Ga0.93N n-cladding layer 4; an Si-doped n-type GaN n-guide layer 5; an active layer 6 having a multiple quantum well (MQW) structure, and including a Ga0.9In0.1N well layer 61 (thickness: about 2 nm) and a Ga0.97In0.03N barrier layer 62 (thickness: about 4 nm), the layers 61 and 62 being laminated alternately; an Mg-doped GaN p-guide layer 7; an Mg-doped Al0.07Ga0.93N p-cladding layer 8; and an Mg-doped GaN p-contact layer 9 are successively formed on a sapphire substrate. A p-electrode 10 is formed of a film of titanium nitride (TiN) or tantalum nitride (TaN) (thickness: 50 nm). The contact resistance of this electrode is reduced through heat treatment.

Abstract: A wiring structure for semiconductor device has a wiring layer that includes copper as main component and a crystal grain promotion layer that promotes enlargement in a crystal grain of the wiring layer.

Abstract: A GaN layer is formed on a sapphire substrate through an AlN buffer layer and doped with Mg to prepare a laminate (referred to as “GaN substrate”). A metal (Pt and Ni) electrode 50 nm thick is formed on the GaN substrate by (1) vapor deposition after the GaN substrate is heated to a temperature of 300° C. or by (2) vapor deposition while the GaN substrate is left at room temperature. (3) The electrode obtained in (2) is heated to 300° C. in a nitrogen atmosphere. The contact resistance of the electrode obtained in (1) is lower by two or three digits than that of the electrode obtained in (2) or (3). That is, the electric characteristic of the electrode obtained in (1) is improved greatly.

Abstract: An object of the present invention is to obtain greater reduction in resistance between an n-electrode and an n-type layer made of a Group III nitride compound semiconductor. According to the present invention, the n-electrode is formed with a first electrode material made of at least one member selected from the group consisting of vanadium (V), titanium (Ti), zirconium (Zr) and tungsten (W), a second electrode material made of at least one member selected from the group consisting of palladium (Pd), platinum (Pt), gold (Au), silver (Ag) and copper (Cu), and a third electrode material made of at least one member selected from the group consisting of aluminum (Al), silicon (Si) and germanium (Ge).

Abstract: An object of this invention is to provide an electrode for p-type SiC which can provide improved surface morphology and less thermal damage for a semiconductor crystal layer due to formation of an electrode. In this invention, a p-type electrode is manufactured to contain at least one selected from the group consisting of nickel (Ni), cobalt (Co), palladium (Pd) and platinum (Pt).

Abstract: A take-up reel has a diameter equal to or more than 85 times a thickness of a veneer sheet wound thereon and equal to or more than 300 mm so as to be of a curvature of the take-up reel to reduce cracking in parallel to fiber orientations that occurs in winding a veneer sheet after drying on a winding surface of the take-up reel.

Abstract: A vibration diagnosis is performed by using a vibration mode interactive query section grasping vibration event of a machinery such as turbine rotor and characteristic feature thereof from detected data information, a vibration factor diagnosis section estimating a vibration factor based on the information from the vibration mode interactive query section, and a diagnosis result display section indicating the estimated vibration factor and a guidance for countermeasure to be taken against the vibration factor.

Abstract: A take-up reel has a diameter equal to or more than 85 times a thickness of a veneer sheet wound thereon and equal to or more than 300 mm so as to be of a curvature of the take-up reel to reduce cracking in parallel to fiber orientations that occurs in winding a veneer sheet after drying on a winding surface of the take-up reel.

Abstract: A take-up reel has a diameter equal to or more than 85 times a thickness of a veneer sheet wound thereon and equal to or more than 300 mm so as to be of a curvature of the take-up reel to reduce cracking in parallel to fiber orientations that occurs in winding a veneer sheet after drying on a winding surface of the take-up reel.

Abstract: A take-up reel has a diameter equal to or more than 85 times a thickness of a veneer sheet wound thereon and equal to or more than 300 mm so as to be of a curvature of the take-up reel to reduce cracking in parallel to fiber orientations that occurs in winding a veneer sheet after drying on a winding surface of the take-up reel.

Abstract: An AlN buffer layer 2; a silicon (Si)-doped GaN high-carrier-concentration n+ layer 3; an Si-doped n-type Al0.07Ga0.93N n-cladding layer 4; an Si-doped n-type GaN n-guide layer 5; an active layer 6 having a multiple quantum well (MQW) structure, and including a Ga0.9In0.1N well layer 61 (thickness: about 2 nm) and a Ga0.97In0.03N barrier layer 62 (thickness: about 4 nm), the layers 61 and 62 being laminated alternately; an Mg-doped GaN p-guide layer 7; an Mg-doped Al0.07Ga0.93N p-cladding layer 8; and an Mg-doped GaN p-contact layer 9 are successively formed on a sapphire substrate. A p-electrode 10 is formed of a film of titanium nitride (TiN) or tantalum nitride (TaN) (thickness: 50 nm). The contact resistance of this electrode is reduced through heat treatment.

Abstract: A take-up reel has a diameter equal to or more than 85 times a thickness of a veneer sheet wound thereon and equal to or more than 300 mm so as to be of a curvature of the take-up reel to reduce cracking in parallel to fiber orientations that occurs in winding a veneer sheet after drying on a winding surface of the take-up reel.

Abstract: A layer comprising cobalt (Co) is formed on a p+ layer by vapor deposition, and a layer comprising gold (Au) is formed thereon. The two layers are alloyed by a heat treatment to form a light-transmitting electrode. The light-transmitting electrode therefore has reduced contact resistance and improved light transmission properties, and gives a light-emitting pattern which is stable over a long time. Furthermore, since cobalt (Co) is an element having a large work function, satisfactory ohmic properties are obtained.

Abstract: A take-up reel has a diameter equal to or more than 85 times a thickness of a veneer sheet wound thereon and equal to or more than 300 mm so as to be of a curvature of the take-up reel to reduce cracking in parallel to fiber orientations that occurs in winding a veneer sheet after drying on a winding surface of the take-up reel.

Abstract: A take-up reel has a diameter equal to or more than 85 times a thickness of a veneer sheet wound thereon and equal to or more than 300 mm so as to be of a curvature of the take-up reel to reduce cracking in parallel to fiber orientations that occurs in winding a veneer sheet after drying on a winding surface of the take-up reel.

Abstract: A take-up reel has a diameter equal to or more than 85 times a thickness of a veneer sheet wound thereon and equal to or more than 300 mm so as to be of a curvature of the take-up reel to reduce cracking in parallel to fiber orientations that occurs in winding a veneer sheet after drying on a winding surface of the take-up reel.