Abstract: A method of manufacturing a semiconductor device, includes: loading a substrate including a laminated film including an insulating film and a sacrificial film, a channel hole formed in the laminated film, a charge trapping film formed on a surface in the channel hole, a first channel film formed on a surface of the charge trapping film, and a common source line exposed on the bottom of the channel hole; receiving information on a distribution of hole diameter of the channel hole; and forming a second channel film on a surface of the first channel film by supplying a first processing gas and a second processing gas to a center side and an outer peripheral side of the substrate, respectively, so as to correct the distribution of the hole diameter based on the information.

Abstract: A method of manufacturing a semiconductor device includes: processing a substrate by operating a processing apparatus included in a substrate processing apparatus, based on a first process setting; acquiring apparatus data of the processing apparatus when processing the substrate; generating first evaluation data of the processing apparatus based on an evaluation factor corresponding to the first process setting and the apparatus data; determining one or more recipe items executable in the processing apparatus based on the first evaluation data; and notifying the one or more recipe items.

Abstract: Provided is a technique capable of suppressing a product substrate from being contaminated with a contaminant generated in a process chamber. The method includes (a) processing a substrate supported by a first substrate support by generating plasma in a first plasma generating region in a process chamber; and (b) removing a metal substance in the process chamber by generating plasma in the first plasma generating region and a second plasma generating region disposed between the first substrate support and a back surface of a substrate supported by a second substrate support.

Abstract: Disclosed is a method of manufacturing a semiconductor device. The method includes: (a) accommodating a substrate having a plurality of carbon-containing films protruding from a surface of the substrate; (b) forming a silicon-containing film on a surface of the plurality of carbon-containing films and a surface of the substrate by supplying a silicon-containing gas to the substrate; (c) forming a silicon/oxygen-containing film by supplying a first plasma of an oxygen-containing gas to the substrate; and (d) forming a silicon oxide film by supplying a second plasma of the oxygen-containing gas to the substrate after performing (c).

Abstract: A method of manufacturing a semiconductor device includes: processing a substrate by operating a processing apparatus included in a substrate processing apparatus, based on a first process setting; acquiring apparatus data of the processing apparatus when processing the substrate; generating first evaluation data of the processing apparatus based on an evaluation factor corresponding to the first process setting and the apparatus data; determining one or more recipe items executable in the processing apparatus based on the first evaluation data; and notifying the one or more recipe items.

Abstract: Disclosed is a method of manufacturing a semiconductor device. The method includes: (a) accommodating a substrate having a plurality of carbon-containing films protruding from a surface of the substrate; (b) forming a silicon-containing film on a surface of the plurality of carbon-containing films and a surface of the substrate by supplying a silicon-containing gas to the substrate; (c) forming a silicon/oxygen-containing film by supplying a first plasma of an oxygen-containing gas to the substrate; and (d) forming a silicon oxide film by supplying a second plasma of the oxygen-containing gas to the substrate after performing (c).

Abstract: A substrate processing apparatus includes: a first process chamber where a substrate is subjected to a first process; a second process chamber where the substrate is subjected to a second process; a substrate support unit; a first electrode; a second electrode; an elevating unit; a gas supply unit supplying a first gas, a second gas and a third gas to the substrate; a power supply unit; a control unit controlling the elevating unit, the gas supply unit and the power supply unit so as to: (a) perform the first process by supplying the second gas activated by the first electrode and the first gas to the substrate; (b) move the substrate on the substrate support unit from the first process chamber to the second process chamber after (a); and (c) perform the second process by supplying the third gas activated by the second electrode to the substrate after (b).

Abstract: A semiconductor manufacturing method includes preparing a substrate having a metal film formed on a surface thereof; forming an oxide layer by oxidizing a surface of the metal film by plasma of a mixed gas of an oxygen-containing gas and a hydrogen-containing gas; and forming a thin film on the oxide layer by supplying at least an oxidizing gas to the substrate.

Abstract: A method of manufacturing a semiconductor device includes: preparing a substrate processing apparatus including a substrate process chamber having a plasma-generation space where a nitrogen-containing gas is plasma-exited and a process space where a substrate is mounted in communication with the plasma-generation space, an inductive coupling structure configured by a coil and an impedance matching circuit, wherein electric field combining the coil and the circuit has a length of an integer multiple of a wavelength of an high-frequency power, and a table to mount the substrate under a lower end of the coil; mounting the substrate on the table; supplying the nitrogen-containing gas into the chamber; starting a plasma excitation of the nitrogen-containing gas by applying the high-frequency power to the coil; and nitriding a surface of the substrate with active species containing a nitrogen element at an internal pressure of the chamber ranging from 1 to 100 Pa.

Abstract: A method of manufacturing a semiconductor device includes receiving film thickness distribution data of a polished first insulating film of a substrate; calculating processing data for reducing a difference between a film thickness at a center side of the substrate and a film thickness at a periphery side of the substrate, based on the film thickness distribution data; loading the substrate into a process chamber; supplying a process gas to the substrate; and correcting a film thickness of the first insulating film based on the processing data by activating the process gas so that a concentration of active species of the process gas generated at the center side of the substrate differs from a concentration of active species of the process gas generated at the periphery side of the substrate.

Abstract: A method of manufacturing a semiconductor device includes providing a substrate processing apparatus including a substrate processing chamber having a plasma generation space and a substrate processing space, a coil provided on the plasma generation space and having an electrical length equal to an integer multiple of a wavelength of high frequency power, and a mounting table, mounting the substrate having a trench to the mounting table, the trench configured so that surfaces of silicon-containing films differing in type are exposed, while at least one of the silicon-containing films including surfaces differing in crystal orientation, supplying a process gas into the chamber, starting generation of plasma of the process gas by applying high frequency power to the coil, and modifying the surfaces by the plasma.

Abstract: A semiconductor manufacturing method includes preparing a substrate having a metal film formed on a surface thereof; forming an oxide layer by oxidizing a surface of the metal film by plasma of a mixed gas of an oxygen-containing gas and a hydrogen-containing gas; and forming a thin film on the oxide layer by supplying at least an oxidizing gas to the substrate.

Abstract: A technique is provided in which a deviation of a characteristic of a semiconductor device is suppressed from occurring. The technique includes a method of a manufacturing a semiconductor device, including: (a) polishing a first silicon-containing layer formed on a substrate including a convex structure; (b) obtaining a data representing a height distribution of a surface of the first silicon-containing layer after performing the step (a); (c) determining a process condition; and (d) supplying a process gas to form a second silicon-containing layer wherein the process gas is activated such that a concentration of an active species of the process gas at a center portion of the substrate differs from a concentration of an active species at a peripheral portion of the substrate to adjust heights of surfaces of a laminated film according to the process condition.

Abstract: A method of manufacturing a semiconductor device includes receiving film thickness distribution data of a polished first insulating film of a substrate; calculating processing data for reducing a difference between a film thickness at a center side of the substrate and a film thickness at a periphery side of the substrate, based on the film thickness distribution data; loading the substrate into a process chamber; supplying a process gas to the substrate; and correcting a film thickness of the first insulating film based on the processing data by activating the process gas so that a concentration of active species of the process gas generated at the center side of the substrate differs from a concentration of active species of the process gas generated at the periphery side of the substrate.

Abstract: A substrate processing apparatus may include a process chamber configured to accommodate a substrate having a metal film polished on a first insulating film and a second insulating film polished on the metal film; a process gas supply part configured to supply a process gas to the substrate; an activation part configured to activate the process gas; a computation part configured to compute processing data for adjusting a film thickness distribution of a stacked insulating film having the polished second insulating film and a third insulating film by adjusting a film thickness distribution of the third insulating film based on the film thickness distribution data of the polished second insulating film; and a control part configured to control the process gas supply part and the activation part to adjust the film thickness distribution of the stacked insulating film based on the processing data.

Abstract: The present invention provides a technology capable of removing impurities remaining in a thin film when the film is formed and modifying a characteristic of the thin film according to a change in impurity concentration. There is provided a method of manufacturing a semiconductor device including: (a) repetitively supplying a plurality of gases including elements constituting a film in temporally separated pulses (in non-simultaneous manner) to form the film on the substrate; and (b) exciting a modifying gas including a reducing gas and at least one of a nitriding gas and an oxidizing gas by plasma and supplying the modifying gas excited by plasma to modify the film.

Abstract: Provided is a technique capable of suppressing a product substrate from being contaminated with a contaminant generated in a process chamber. The method includes (a) processing a substrate supported by a first substrate support by generating plasma in a first plasma generating region in a process chamber; and (b) removing a metal substance in the process chamber by generating plasma in the first plasma generating region and a second plasma generating region disposed between the first substrate support and a back surface of a substrate supported by a second substrate support.

Abstract: A substrate processing apparatus includes a substrate processing chamber including a plasma generation space where a plasma is generated and a substrate processing space where a substrate is placed during a substrate process; an inductive coupling structure outside the plasma generation space wherein a sum of electrical lengths of a coil of the inductive coupling structure and a waveform adjustment circuit connected to the coil is an integer multiple of a wavelength of an applied power; a substrate mounting table in the substrate processing space and supporting the substrate including grooves having high aspect ratios with a silicon-containing layer disposed thereon; a substrate transfer port at a wall of the substrate processing chamber; a substrate mounting table elevator moving the substrate mounting table upward/downward; an oxygen gas supply system to supply an oxygen-containing gas into the plasma generation space; and an exhaust unit exhausting gas from the substrate processing chamber.

Abstract: A substrate processing apparatus includes a substrate processing chamber including a plasma generation space where a plasma is generated and a substrate processing space where a substrate is placed during a substrate process; an inductive coupling structure outside the plasma generation space wherein a sum of electrical lengths of a coil of the inductive coupling structure and a waveform adjustment circuit connected to the coil is an integer multiple of a wavelength of an applied power; a substrate mounting table in the substrate processing space and supporting the substrate including grooves having high aspect ratios with a silicon-containing layer disposed thereon; a substrate transfer port at a wall of the substrate processing chamber; a substrate mounting table elevator moving the substrate mounting table upward/downward; an oxygen gas supply system to supply an oxygen-containing gas into the plasma generation space; and an exhaust unit exhausting gas from the substrate processing chamber.

Abstract: A process of manufacturing a semiconductor device may be simplified, and oxidation of a metal element-containing film may be suppressed. The method of manufacturing a semiconductor device includes loading a substrate including a metal element-containing film and an insulating film formed on the metal element-containing film into a process chamber and supporting the substrate using a substrate support installed in the process chamber; supplying a reactive gas including at least one of hydrogen in excited state and nitrogen in excited state, and oxygen in excited state onto the substrate in the process chamber and processing the substrate; and unloading the substrate from an inside of the process chamber.