Abstract: A solid-state image pickup device includes an element isolation insulating film electrically isolating pixels on the surface of a well region; a first isolation diffusion layer electrically isolating the pixels under the element isolation insulating film; and a second isolation diffusion layer electrically isolating the pixels under the first isolation diffusion layer, wherein a charge accumulation region is disposed in the well region surrounded by the first and second isolation diffusion layers, the inner peripheral part of the first isolation diffusion layer forms a projecting region, an impurity having a conductivity type of the first isolation diffusion layer and an impurity having a conductivity type of the charge accumulation region are mixed in the projecting region, and a part of the charge accumulation region between the charge accumulation region and the second isolation diffusion layer is abutted or close to the second isolation diffusion layer under the projecting region.

Abstract: A rotor for a reluctance type rotating machine includes a rotor core formed by stacking a number of annular core materials each of which includes magnetic concave and convex portions. The rotor core has two keys which are formed at two positions on an inner circumference of the rotor core. The positions are spaced 180 degrees apart from each other with respect to the rotor core. The rotor core is divided into a plurality of blocks and the core materials constituting at least one block have the magnetic concave and convex portions shifted by a predetermined angle relative to the core materials constituting the other or another block on the basis of a center line passing through the keys. A whole or part of the core materials of at least one block are located circumferentially 180 degrees apart form the core materials constituting the other or another block.

Abstract: A solid-state imaging device includes a plurality of pixels two-dimensionally arrayed in a well region disposed on a semiconductor substrate, each pixel including a photoelectric conversion section having a charge accumulation region which accumulates signal charge; an element isolation layer which is disposed on the surface of the well region along the peripheries of the individual charge accumulation regions and which electrically isolates the individual pixels from each other; and a diffusion layer which is disposed beneath the element isolation layer and which electrically isolates the individual pixels from each other, the diffusion layer having a smaller width than that of the element isolation layer. Each charge accumulation region is disposed so as to extend below the element isolation layer and be in contact with or in close proximity to the diffusion layer.

Abstract: A solid-state image pickup device includes an element isolation insulating film electrically isolating pixels on the surface of a well region; a first isolation diffusion layer electrically isolating the pixels under the element isolation insulating film; and a second isolation diffusion layer electrically isolating the pixels under the first isolation diffusion layer, wherein a charge accumulation region is disposed in the well region surrounded by the first and second isolation diffusion layers, the inner peripheral part of the first isolation diffusion layer forms a projecting region, an impurity having a conductivity type of the first isolation diffusion layer and an impurity having a conductivity type of the charge accumulation region are mixed in the projecting region, and a part of the charge accumulation region between the charge accumulation region and the second isolation diffusion layer is abutted or close to the second isolation diffusion layer under the projecting region.

Abstract: A rotor for a reluctance type rotating machine includes a rotor core formed by stacking a number of annular core materials each of which includes magnetic concave and convex portions alternately formed on an outer circumference thereof and a central through hole, the rotor core having a key axially extending on an outer circumference, the rotor core being divided into a plurality of blocks, the core materials constituting one of at least three blocks having the magnetic concave and convex portions shifted by a predetermined angle in one of a rotating direction of the rotor and a direction opposite the rotating direction of the rotor relative to a center line passing the key, the core materials constituting each one of the blocks located at both ends of the one block having the magnetic concave and convex portions shifted by a predetermined angle in the other of the rotating direction of the rotor and the direction opposite the rotating direction of the rotor relative to a center line passing the key, and a ro

Abstract: A rotor for a reluctance type rotating machine includes a rotor core formed by stacking a number of annular core materials each of which includes magnetic concave and convex portions alternately formed on an outer circumference thereof and a central through hole, the rotor core having a key axially extending on an outer circumference, the rotor core being divided into a plurality of blocks, the core materials constituting one of at least three blocks having the magnetic concave and convex portions shifted by a predetermined angle in one of a rotating direction of the rotor and a direction opposite the rotating direction of the rotor relative to a center line passing the key, the core materials constituting each one of the blocks located at both ends of the one block having the magnetic concave and convex portions shifted by a predetermined angle in the other of the rotating direction of the rotor and the direction opposite the rotating direction of the rotor relative to a center line passing the key, and a ro

Abstract: A rotor for a reluctance type rotating machine includes a rotor core formed by stacking a number of annular core materials each of which includes magnetic concave and convex portions alternately formed on an outer circumference thereof and a central through hole, the rotor core having a key axially extending on an outer circumference thereof, the rotor core being divided into a plurality of blocks, the core materials constituting at least one block having the magnetic concave and convex portions shifted by a predetermined angle relative to the core materials constituting the other or another block on the basis of a center line passing the key, and a rotational shaft inserted through the central hole of the rotor core, the shaft having a key groove engaging the key of the rotor core.

Abstract: In a method of manufacturing a solid-state image pickup device having a virtual gate structure, in a process of forming a profile of a sensor portion, when ion implantation to form a p+ type layer at a substrate surface side is carried out while the ion implantation direction is tilted with respect to the substrate surface, the ion implantation is divisively carried out at plural times and from multiple ion implantation directions so that the total dose amount is matched, whereby impurities can be implanted into any area of the sensor portion and thus no impurities-unformed area occurs.

Abstract: In a method of manufacturing a solid-state image pickup device having a virtual gate structure, in a process of forming a profile of a sensor portion, when ion implantation to form a p+ type layer at a substrate surface side is carried out while the ion implantation direction is tilted with respect to the substrate surface, the ion implantation is divisively carried out at plural times and from multiple ion implantation directions so that the total dose amount is matched, whereby impurities can be implanted into any area of the sensor portion and thus no impurities-unformed area occurs.

Abstract: A solid state image pick-up device comprises a plurality of light receiving sensors which perform photoelectric conversion being disposed in a matrix form on the surface of a substrate, charge transfer portions for transferring signal charges, transfer electrodes positioned in the upper portions of the charge transfer portions and an interlayer insulating layer, and over the interlayer insulating layer a first stripe-on-chip lenses having approximate semicylindrical shapes are formed along the vertical or horizontal lines of light receiving light sensors and a second stripe-on-chip-lenses having an approximate semicylindrical shapes are formed over the first stripe-on-chip-lenses in a direction making a right angle with that of the first stripe-on-chip-lenses.

Abstract: In a semiconductor wafer according to this invention, an epitaxial layer is formed on the surface of a semiconductor substrate, a second element which is not the same but homologous as a first element constituting the semiconductor substrate is present to have a peak concentration on the semiconductor substrate side rather than the surface, and this peak concentration is 1.times.10.sup.16 atoms/cm.sup.3 or more.

Abstract: In a semiconductor wafer according to this invention, an epitaxial layer is formed on the surface of a semiconductor substrate, a second element which is not the same but homologous as a first element constituting the semiconductor substrate is present to have a peak concentration on the semiconductor substrate side rather than the surface, and this peak concentration is 1.times.10.sup.16 atoms/cm.sup.3 or more.

Abstract: In a semiconductor wafer according to this invention, an epitaxial layer is formed on the surface of a semiconductor substrate, a second element which is not the same but homologous as a first element constituting the semiconductor substrate is present to have a peak concentration on the semiconductor substrate side rather than the surface, and this peak concentration is 1.times.10.sup.16 atoms/cm.sup.3 or more.

Abstract: In a CCD solid state image sensing device in which a photosensitive section is constructed by a photodiode formed by a PN junction between a first P-type well region and an N-type impurity diffusion region formed on an N-type silicon substrate, the N-type impurity diffusion region is formed by the ion implantation of single substance of arsenic (As). According to this CCD solid state image sensing device, a bright flaw on an image sensing screen, which is one of the defects encountered with an image sensing screen, can be reduced. Also, the n-type impurity diffusion region constructing the PN Junction can be reduced in size and the CCD solid state image sensing device itself can be made compact in size. Further, a method of manufacturing a CCD solid state image sensing device also is provided.

Abstract: In a CCD solid state image sensing device in which a photosensitive section is constructed by a photodiode formed by a PN junction between a first P-type well region and an N-type impurity diffusion region formed on an N-type silicon substrate, the N-type impurity diffusion region is formed by the ion implantation of single substance of arsenic (As). According to this CCD solid state image sensing device, a bright flaw on an image sensing screen, which is one of the defects encountered with an image sensing screen, can be reduced. Also, the n-type impurity diffusion region constructing the PN junction can be reduced in size and the CCD solid state image sensing device itself can be made compact in size. Further, a method of manufacturing a CCD solid state image sensing device also is provided.

Abstract: The heat-sensitive recording material has on a base sheet a heat-sensitive recording layer which comprises a colorless or pale colored basic chromogenic material and a color developer. The recording layer comprises at least one fluoran derivative developing a black color and at least one azaphthalide derivative represented by the formula (I) as the basic chromogenic material, and at least one diphenylsulfone derivative represented by the formula (II) as the color developer. The azaphthalide derivative is used in an amount of 3 to 50 % by weight based on the amount of the fluoran derivative.

Abstract: In a CCD solid state image sensing device in which a photo-sensitive section is constructed by a photodiode formed by a PN junction between a first P-type well region and an N-type impurity diffusion region formed on an N-type silicon substrate, the N-type impurity diffusion region is formed by the ion implantation of single substance of arsenic (As). According to this CCD solid state image sensing device, a bright flaw on an image sensing screen, which is one of the defects encountered with an image sensing screen, can be reduced. Also, the n-type impurity diffusion region constructing the PN junction can be reduced in size and the CCD solid state image sensing device itself can be made compact in size. Further, a method of manufacturing a CCD solid state image sensing device also is provided.

Abstract: In a digital network system, such as ISDN (Integrated Service Digital Network) system, a data link is established between transmit-side and receive-side stations so that a data transfer is performed onto a public telephone line in accordance with a predetermined protocol. The transmit-side station compresses data read from a storage medium and then transfers compressed data to the receive-side station, while the receive-side station expands the compressed data and then writes it into a storage medium. Before transferring the compressed data, the transmit-side station transmits a data transfer request to the receive-side station, so that if the receive-side station is now ready to receive the compressed data, the transmit-side station transfers the compressed data to the receive-side station.