Abstract: A color identifying apparatus for identifying the color of a reaction surface which has caused a color reaction with a gas to be specified includes a storage that, for every set of a plurality of referential color coordinates generated pixel by pixel from RGB bitmap images of a reaction surface which has caused a color reaction with a gas, stores pieces of reference data, which respectively represent both each coordinate on a chromaticity diagram and frequencies that depend on the numbers of the referential color coordinates corresponding to each one of the coordinates on the chromaticity diagram, and identification information for identifying the reaction surface; an image capturing unit that captures an image of the reaction surface and generates RGB bitmap images of the reaction surface; an arithmetic unit that generates a plurality of measured color coordinates pixel by pixel from the RGB bitmap images generated by the image capturing unit, generates measured data, which represents both each coordinate on

Abstract: A method for fabricating a semiconductor device includes the steps of forming a first polycrystalline silicon layer containing oxygen atoms on a semiconductor layer, of forming a second polycrystalline silicon layer containing nitrogen atoms on the first polycrystalline silicon layer, of removing a predetermined part of the first and second polycrystalline silicon layers to form an opening therein, and of diffusing impurity material into the semiconductor layer through the opening in order to form a diffused region. The fabricating process can be remarkably simplified.

Abstract: A thin film resistor is formed of polycrystalline silicon which contains 2 to 45 atomic percent of oxygen and wherein the resistivity of the polycrystalline silicon film varies as a function of the amount of oxygen contained in the film and wherein the resistivity is substantially higher than polycrystalline silicon not containing oxygen.