Patents by Inventor Masanori Oosawa

Masanori Oosawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Cleaning Method For Processing Chamber Of Semiconductor Substrates And Etching Method For Silicon Substrates Technical Field
    Publication number: 20080160777
    Abstract: A cleaning method for a processing chamber of semiconductor substrates is provided which is capable of rapidly removing deposits and accretions generated inside the chamber of processing semiconductor substrates of a high-dielectric-constant oxide and of preventing any reaction product depositing. The cleaning method for a processing chamber of semiconductor substrates includes activating a mixed gases which contains a halogenated gas and either an oxygen-contained gas or an oxidizing gas during a plasma treatment or a heating treatment in order to etch off the deposits or accretions.
    Type: Application
    Filed: December 22, 2005
    Publication date: July 3, 2008
    Inventors: Kouichi Ono, Tomohiro Kitagawa, Minoru Inoue, Masanori Oosawa