Abstract: Provided is a semiconductor device manufacturing method of forming a film of less than one atomic layer on a substrate. The method includes (a) supplying a source gas into a processing chamber accommodating the substrate to adsorb the source gas on the substrate; (b) supplying a reactive gas different from the source gas into the processing chamber to cause a reaction of the reactive gas with the source gas adsorbed on the substrate before the source gas is saturatively adsorbed on the substrate; (c) removing an inner atmosphere of the processing chamber; and (d) supplying a modifying gas into the processing chamber to modify the source gas adsorbed on the substrate.

Abstract: It is possible to efficiently remove deposited materials such as a conductive film or insulting film adhered to parts such as the inner wall of a processing chamber and a substrate supporting tool disposed in the processing chamber. There is provided a method of manufacturing a semiconductor device. The method comprises: loading a substrate into a processing chamber; forming a conductive film or an insulating film on the substrate by supplying a plurality of source gases into the processing chamber; unloading the substrate from the processing chamber; and modifying a conductive film or an insulating film adhered to the processing chamber by supplying a modifying gas into the processing chamber. After performing a cycle of the loading, the forming, the unloading, and the modifying processes a plurality of times, the modified conductive film or the modified insulating film adhered to the processing chamber is removed from the processing chamber by supplying a cleaning gas into the processing chamber.

Abstract: A compression device includes a processor configured to execute a process. The process includes: storing, in a storage, a first compressed code in association with a first element, the first compressed code corresponding to a combination of a first element and a first delimiter, the first element being one of a plurality of elements constituting input data, the first delimiter being one of delimiters delimiting the plurality of elements and succeeding the first element in the input data; acquiring, from the storage, the first compressed code in response to reading a sequence of the first element and the first delimiter from the input data; and writing the first compressed code into a storage area that stores therein compressed data of the input data.

Abstract: A substrate processing device comprises a reaction vessel 11 forming a space receiving a substrate 1 and adapted to have a plurality of reaction gases supplied thereto to perform desired processing of the substrate, an exhaust port 16 formed in the reaction vessel 11 for exhausting the reaction vessel 11, and a gas supply system 70A, 70B for supplying at least a plurality of reaction gases into the reaction vessel 11, the gas supply system 70A, 70B including a cleaning gas supply unit for supplying a cleaning gas to perform desired processing of the substrate 1 to thereby remove adherents in the reaction vessel 11, and a post-processing gas supply unit for supplying a post-processing gas capable of removing the elements contained in the cleaning gas remaining in the reaction vessel 11 after the adherents have been removed by supplying the cleaning gas, the post-processing gas containing all of the reaction gases used in performing desired processing of the substrate.

Abstract: In a valve-regulated lead-acid battery in which charging is performed intermittently on every short time and high rate discharging to a load is performed in a partial state of charge (PSOC), a valve-regulated lead-acid battery improved for the charge acceptance and the life characteristic under PSOC than usual is provided. A positive electrode plate having a specific surface area of an active material of 5.5 m2/g or more is used. A valve-regulated lead-acid battery is manufactured by using a negative electrode plate improved for the charge acceptance and the life performance by adding a carbonaceous electroconductive material and a formaldehyde condensate of bisphenols aminobenzene sulfonic acid to a negative electrode active material and setting the specific gravity of an electrolyte to 1.30 or more and 1.35 or less.

Abstract: There are provided a method of manufacturing a semiconductor device, a substrate processing apparatus, and a semiconductor device. The method allows rapid formation of a conductive film, which has a low concentration of impurities permeated from a source owing to its dense structure, and a low resistivity. The method is performed by simultaneously supplying two or more kinds of sources into a processing chamber to form a film on a substrate placed in the processing chamber. The method comprises: performing a first source supply process by supplying at least one kind of source into the processing chamber at a first supply flow rate; and performing a second source supply process by supplying the at least one kind of source into the processing chamber at a second supply flow rate different from the first supply flow rate.

Abstract: A shutter apparatus includes a blade member, a blade moving member, a locking member, a cam member, and a restriction member. The cam member moves the locking member from the locking position to the non-locking position so that the blade moving member moves from the closing position to the opening position. The restriction member moves from the non-restriction position to the restriction position after the blade moving member moves from the closing position to the opening position. The cam member moves the locking member in a direction opposite to a direction from the non-locking position to the locking position so that the locking member moves the restriction member from the restriction position to the non-restriction position.

Abstract: There is provided a substrate processing method, comprising the steps of: supplying source gas into a processing chamber in which substrates are accommodated; removing the source gas and an intermediate body of the source gas remained in the processing chamber; supplying ozone into the processing chamber in a state of substantially stopping exhaust of an atmosphere in the processing chamber; and removing the ozone and the intermediate body of the ozone remained in the processing chamber; with these steps repeated multiple number of times, to thereby form an oxide film on the surface of the substrates by supplying the source gas and the ozone alternately so as not to be mixed with each other.

Abstract: Provided are a semiconductor device manufacturing method and a substrate processing apparatus that are capable of increasing a work function of a film to be formed, in comparison with a related art. The method comprises: (a) supplying a metal-containing gas simultaneously with one selected from the group consisting of an oxygen-containing gas, a halogen-containing gas and combinations thereof into a processing chamber accommodating the substrate; and (b) supplying a nitrogen-containing gas with one of the oxygen-containing gas, the halogen-containing gas and the combinations thereof into the processing chamber.

Abstract: Provided is a semiconductor device manufacturing method including: (a) supplying a source gas containing a first element and chlorine to a substrate accommodated in a processing chamber to form an adsorption layer of the source gas on the substrate; (b) supplying a chlorine-containing gas having a composition different from that of the source gas to the substrate while supplying the sources gas before an adsorption of the source gas to the substrate is saturated to suppress the adsorption of the source gas to the substrate; (c) removing the source gas and the chlorine-containing gas remaining on the substrate; (d) supplying a modifying gas including a second element to the substrate to form a layer including the first element and the second element on the substrate by modifying the adsorption layer of the source gas; and (e) removing the modifying gas remaining on the substrate.

Abstract: Provided are a semiconductor device manufacturing method and a substrate processing apparatus that are capable of increasing a work function of a film to be formed, in comparison with a related art. A cycle including (a) supplying a metal-containing gas into a processing chamber where a substrate is accommodated (b) supplying a nitrogen-containing gas into the processing chamber; and (c) supplying one of an oxygen-containing gas, a halogen-containing gas and a combination thereof into the processing chamber, is performed a plurality of times to form a metal-containing film on the substrate.

Abstract: Disclosed is a substrate processing apparatus, including: a processing chamber for processing a substrate; a substrate rotating mechanism for rotating the substrate; a gas supply unit for supplying gas to the substrate, at least two kinds of gases A and B being alternately supplied a plurality of times to form a desired film on the substrate; and a controller for controlling a rotation period of the substrate or a gas supply period defined as a time period between an instant when the gas A is made to flow and an instant when the gas A is made to flow next time such that the rotation period and the gas supply period are not brought into synchronization with each other at least while the alternate gas supply is carried out predetermined times.

Abstract: On each negative plate (1), a non-woven fabric (2) composed of fibers of at least one material selected from a group of materials comprising glass, pulp and polyolefins comes into contact with the entire surface of the plate without being integrated with the plate. Each negative plate (1), which is in contact with the non-woven fabric (2), is contained in an envelope separator (3) comprising a microporous synthetic resin sheet, and is laminated with a positive plate (4). The non-woven fabric is manufactured through papermaking process in which glass fibers, pulp and silica powder are preferably used and dispersed in water as the main components.

Abstract: A method includes: storing, by a processor, in a storage region represented by first character information and identification information of a first file, presence or absence information that represents whether or not the first file includes the character information or whether or not a second file that is different from the first file includes second character information, wherein the storage region stores information that represents whether or not the second file includes the second character information.

Abstract: A shutter apparatus includes a blade member, a blade moving member, a locking member, a cam member, and a restriction member. The cam member moves the locking member from the locking position to the non-locking position so that the blade moving member moves from the closing position to the opening position. The restriction member moves from the non-restriction position to the restriction position after the blade moving member moves from the closing position to the opening position. The cam member moves the locking member in a direction opposite to a direction from the non-locking position to the locking position so that the locking member moves the restriction member from the restriction position to the non-restriction position.

Abstract: Disclosed is a substrate processing apparatus, including: a processing chamber for processing a substrate; a substrate rotating mechanism for rotating the substrate; a gas supply unit for supplying gas to the substrate, at least two kinds of gases A and B being alternately supplied a plurality of times to form a desired film on the substrate; and a controller for controlling a rotation period of the substrate or a gas supply period defined as a time period between an instant when the gas A is made to flow and an instant when the gas A is made to flow next time such that the rotation period and the gas supply period are not brought into synchronization with each other at least while the alternate gas supply is carried out predetermined times.

Abstract: A shutter apparatus includes a blade member, a blade moving member, a locking member, a cam member, and a restriction member. The cam member moves the locking member from the locking position to the non-locking position so that the blade moving member moves from the closing position to the opening position. The restriction member moves from the non-restriction position to the restriction position after the blade moving member moves from the closing position to the opening position. The cam member moves the locking member in a direction opposite to a direction from the non-locking position to the locking position so that the locking member moves the restriction member from the restriction position to the non-restriction position.

Abstract: To improve quality or manufacturing throughput of a semiconductor device, a method includes supplying a source gas to a substrate in a process chamber; exhausting an inside of the process chamber; supplying a reaction gas to the substrate; and exhausting the inside of the process chamber, wherein the source gas and/or the reaction gas is supplied in temporally separated pulses in the supply of the source gas and/or in the supply of the reaction gas. Then, the source gas and/or the reaction gas is supplied in temporally separated pulses to form a film during a gas supply time determined by a concentration distribution of by-products formed on a surface of the substrate.

Abstract: A shutter apparatus includes a blade member, a blade moving member, a locking member, a cam member, and a restriction member. The cam member moves the locking member from the locking position to the non-locking position so that the blade moving member moves from the closing position to the opening position. The restriction member moves from the non-restriction position to the restriction position after the blade moving member moves from the closing position to the opening position. The cam member moves the locking member in a direction opposite to a direction from the non-locking position to the locking position so that the locking member moves the restriction member from the restriction position to the non-restriction position.

Abstract: A substrate processing apparatus of the present invention comprises: a processing chamber for storing and processing substrates stacked in multiple stages in horizontal posture; a processing gas supply unit for supplying two or more types of the processing gases to the inside of the processing chamber; an inactive gas supply unit for supplying an inactive gas to the inside of the processing chamber; and an exhaust unit for exhausting an atmosphere of the inside of the processing chamber, wherein the processing gas supply unit has at least two processing gas supply nozzles which extend running along an inner wall of the processing chamber in the stacking direction of the substrates and supply the processing gas to the inside of the processing chamber, and the inactive gas supply unit has a pair of inactive gas supply nozzles which are provided so as to extend running along the inner wall of the processing chamber in the stacking direction of the substrates and so as to sandwich at least one processing gas supp