Abstract: A semiconductor device includes a lower insulating layer formed on a primary surface of a semiconductor substrate; a sealing layer formed in contact with a top surface of the lower insulating layer; and a conductive member including a first conductive member formed on the sealing layer and having a first film thickness and a second conductive member formed on the sealing layer in contact with a first conductive member and having a second film thickness that is smaller than the first film thickness.

Abstract: A foundation portion and a conductive base portion disposed on the foundation portion are formed on a temporary support, a semiconductor element electrically connected to the base portion is disposed on a side of the temporary support on which the foundation portion and the base portion are formed, and an insulating layer coming into a state of burying the foundation portion, the base portion, and the semiconductor element is formed on the temporary support. Subsequently, surfaces of the foundation portion and the insulating layer on a side of the temporary support are exposed by removing the temporary support, and the exposed foundation portion is further removed, thereby disposing the base portion in a state of being more recessed than the surface of the insulating layer. An external connection terminal is formed on the exposed base portion to manufacture the semiconductor package.

Abstract: A foundation portion and a conductive base portion disposed on the foundation portion are formed on a temporary support, a semiconductor element electrically connected to the base portion is disposed on a side of the temporary support on which the foundation portion and the base portion are formed, and an insulating layer coming into a state of burying the foundation portion, the base portion, and the semiconductor element is formed on the temporary support. Subsequently, surfaces of the foundation portion and the insulating layer on a side of the temporary support are exposed by removing the temporary support, and the exposed foundation portion is further removed, thereby disposing the base portion in a state of being more recessed than the surface of the insulating layer. An external connection terminal is formed on the exposed base portion to manufacture the semiconductor package.

Abstract: There is provided a semiconductor device including: a circuit region formed on a semiconductor substrate; a first insulating film covering at least a portion of a region on the semiconductor substrate that includes an upper portion of the circuit region; redistribution wiring disposed on the first insulating film; a coil formed by the redistribution wiring on the first insulating film, the coil being connected to the circuit region; a first soft magnetic material film disposed in an aperture portion of the first insulating film, the aperture portion being provided at a lower portion of the coil; and a second soft magnetic material film that is disposed on the first soft magnetic material film, the second soft magnetic material film covering at least a portion of the coil.

Abstract: A semiconductor device including a terminal that is formed using copper, that is electrically connected to a circuit element, and that includes a formation face formed with a silver-tin solder bump such that a nickel layer is interposed between the terminal and the solder bump, wherein the nickel layer is formed on a region corresponding to part of the formation face.

Abstract: A semiconductor device including a semiconductor substrate including an electrode; a wire connected to the electrode; a first insulating film including a first opening that partially exposes the wire; a base portion that is connected to a portion of the wire exposed via the first opening, and that includes a conductor including a recess corresponding to the first opening; and a solder film on a surface of the base portion. Solder included in the solder film is fused by a first heat treatment, and the recess is filled with the fused solder.

Abstract: A semiconductor device includes wiring that is formed by a conductive body extending, via an insulating film, on a front surface of a semiconductor substrate, and an insulating layer that covers the front surface of the semiconductor substrate including the wiring. Gaps are provided extending from an upper surface of the wiring to a lower portion of the insulating film.

Abstract: Provided is a semiconductor device including a terminal that is formed using copper, that is electrically connected to a circuit element, and that includes a formation face formed with a silver-tin solder bump such that a nickel layer is interposed between the terminal and the solder bump, wherein the nickel layer is formed on a region corresponding to part of the formation face.

Abstract: A semiconductor device includes wiring that is formed by a conductive body extending, via an insulating film, on a front surface of a semiconductor substrate, and an insulating layer that covers the front surface of the semiconductor substrate including the wiring. Gaps are provided extending from an upper surface of the wiring to a lower portion of the insulating film.

Abstract: A semiconductor device includes a lower insulating layer formed on a primary surface of a semiconductor substrate; a sealing layer formed in contact with a top surface of the lower insulating layer; and a conductive member including a first conductive member formed on the sealing layer and having a first film thickness and a second conductive member formed on the sealing layer in contact with a first conductive member and having a second film thickness that is smaller than the first film thickness.

Abstract: A semiconductor device includes a lower insulating layer formed on a primary surface of a semiconductor substrate; a sealing layer formed in contact with a top surface of the lower insulating layer; and a conductive member including a first conductive member formed on the sealing layer and having a first film thickness and a second conductive member formed on the sealing layer in contact with a first conductive member and having a second film thickness that is smaller than the first film thickness.

Abstract: A semiconductor device manufacturing method including preparing a semiconductor substrate including an electrode; forming a wire connected to the electrode; forming a first insulating film including a first opening that partially exposes the wire; forming a base portion that is connected to a portion of the wire exposed via the first opening, and that includes a conductor including a recess corresponding to the first opening; forming a solder film on a surface of the base portion; and fusing solder included in the solder film by a first heat treatment, and filling the recess with the fused solder.

Abstract: A semiconductor device manufacturing method including preparing a semiconductor substrate including an electrode; forming a wire connected to the electrode; forming a first insulating film including a first opening that partially exposes the wire; forming a base portion that is connected to a portion of the wire exposed via the first opening, and that includes a conductor including a recess corresponding to the first opening; forming a solder film on a surface of the base portion; and fusing solder included in the solder film by a first heat treatment, and filling the recess with the fused solder.

Abstract: A foundation portion and a conductive base portion disposed on the foundation portion are formed on a temporary support, a semiconductor element electrically connected to the base portion is disposed on a side of the temporary support on which the foundation portion and the base portion are formed, and an insulating layer coming into a state of burying the foundation portion, the base portion, and the semiconductor element is formed on the temporary support. Subsequently, surfaces of the foundation portion and the insulating layer on a side of the temporary support are exposed by removing the temporary support, and the exposed foundation portion is further removed, thereby disposing the base portion in a state of being more recessed than the surface of the insulating layer. An external connection terminal is formed on the exposed base portion to manufacture the semiconductor package.

Abstract: A semiconductor device includes a lower insulating layer formed on a primary surface of a semiconductor substrate; a sealing layer formed in contact with a top surface of the lower insulating layer; and a conductive member including a first conductive member formed on the sealing layer and having a first film thickness and a second conductive member formed on the sealing layer in contact with a first conductive member and having a second film thickness that is smaller than the first film thickness.

Abstract: A semiconductor device manufacturing method includes: preparing a semiconductor substrate including an electrode; forming a wire connected to the electrode; forming a first insulating film including a first opening that partially exposes the wire; forming a base portion that is connected to a portion of the wire exposed via the first opening, and that comprises a conductor including a recess corresponding to the first opening; forming a solder film on a surface of the base portion; and fusing solder included in the solder film by a first heat treatment, and filling the recess with the fused solder.

Abstract: A semiconductor device includes a semiconductor substrate, a conductor provided on a main surface of the semiconductor substrate, an insulating layer disposed to cover a surface of the conductor and having a recess from a surface thereof towards the conductor, the recess having an opening provided at a bottom portion of the recess and exposing a portion of the conductor, and an external connection terminal connected to the portion of the conductor exposed from the opening. In a plan view of the semiconductor device, the external connection terminal covers the entire opening, and the entire external connection terminal is within the recess.

Abstract: A semiconductor device includes a semiconductor substrate, a conductor provided on a main surface of the semiconductor substrate, an insulating layer disposed to cover a surface of the conductor and having a recess from a surface thereof towards the conductor, the recess having an opening provided at a bottom portion of the recess and exposing a portion of the conductor, and an external connection terminal connected to the portion of the conductor exposed from the opening. In a plan view of the semiconductor device, the external connection terminal covers the entire opening, and the entire external connection terminal is within the recess.

Abstract: A compound represented by the following formula (1), a pharmaceutically acceptable salt thereof or an optically active form thereof: wherein each symbol is as defined in the specification. A compound having a calcium-sensing receptor antagonistic action, a pharmaceutical composition comprising the compound, particularly a calcium receptor antagonist and a therapeutic drug for osteoporosis are provided.

Abstract: A compound represented by the following formula (1), a pharmaceutically acceptable salt thereof or an optically active form thereof: wherein each symbol is as defined in the specification. A compound having a calcium-sensing receptor antagonistic action, a pharmaceutical composition comprising the compound, particularly a calcium receptor antagonist and a therapeutic drug for osteoporosis are provided.