Abstract: Provided are a sparkling beverage having excellent foam properties and a method for the same. A sparkling beverage according to one embodiment of the present invention has a ratio of a nitrogen content (ppm) to an extract (w/v %) of less than 28.0. A method of improving foam properties of a sparkling beverage according to one embodiment of the present invention includes adjusting a ratio of a nitrogen content (ppm) to an extract (w/v %) of a sparkling beverage to less than 28.0, to thereby improve foam properties of the sparkling beverage.

Abstract: A substrate with a transparent conductive film of the invention is a substrate with a transparent conductive film such that a transparent conductive film is disposed to be in contact with an insulating transparent substrate. The transparent conductive film includes: a crystal nucleus that is generated in a surface layer portion of the transparent conductive film; a crystal portion that is formed by growth from the crystal nucleus positioned in the surface layer portion and encloses the crystal nucleus; and a crystal grain boundary that is formed between crystal portions due to the crystal portions located at adjacent positions growing until colliding with each other. The crystal nucleus remains in the surface layer portion in each of the crystal portions.

Abstract: Provided are a sparkling beverage having excellent foam properties and a method for the same. A sparkling beverage according to one embodiment of the present invention has a ratio of a nitrogen content (ppm) to an extract (w/v %) of less than 28.0. A method of improving foam properties of a sparkling beverage according to one embodiment of the present invention includes adjusting a ratio of a nitrogen content (ppm) to an extract (w/v %) of a sparkling beverage to less than 28.0, to thereby improve foam properties of the sparkling beverage.

Abstract: Provided is an electrode layer and a wiring layer, which are free from peeling from a glass substrate. A wiring layer and a gate electrode layer are constituted by an adhering film which is a thin film made of Cu—Mg—Al formed on a surface of a glass substrate, and a copper film formed on the adhering film. When the adhering film includes Mg in a range of at least 0.5 atom % and at most 5 atom %, and aluminum in a range of at least 5 atom % and at most 15 atom %, assuming that the total number of atoms of copper, magnesium and aluminum is taken as 100 atom %, adhesion of the adhering film to the glass substrate becomes high, and the copper thin film is not peeled from the glass substrate. The wiring layer is electrically connected to a pixel electrode of a liquid crystal display device.

Abstract: An electrode film, which is not peeled off from an oxide thin film and in which a copper atom does not diffuse into the oxide thin film, is provided. A wiring layer is composed of a high-adhesion barrier film 37, which is a thin film of Cu—Mg—Al and a copper thin film 38; and the high-adhesion barrier film 37 is brought into contact with the oxide thin film. When a total number of atoms of copper, magnesium, and aluminum is set to 100 at %, if the high-adhesion barrier film 37 contains magnesium in a range of between 0.5 at % and 5 at and aluminum in a range of between 5 at % and 15 at %, then wiring layers 50a, 50b, can be obtained, whereby the adhesion and the barrier property are compatible with each other, adherence is strong, and a copper atom does not diffuse.

Abstract: An electrode film, which is not peeled off from an oxide thin film and in which a copper atom does not diffuse into the oxide thin film, is provided. A wiring layer is composed of a high-adhesion barrier film 37, which is a thin film of Cu—Mg—Al and a copper thin film 38; and the high-adhesion barrier film 37 is brought into contact with the oxide thin film. When a total number of atoms of copper, magnesium, and aluminum is set to 100 at %, if the high-adhesion barrier film 37 contains magnesium in a range of between 0.

Abstract: Disclosed is an electrode film which does not exfoliate from, or diffuse into, an oxide semiconductor or an oxide thin film. An electrode layer comprises a highly adhesive barrier film being a Cu—Mg—Al thin film and a copper thin film; and an oxide semiconductor and an oxide thin film contact with the highly adhesive barrier film. With the highly adhesive barrier film having magnesium in a range of at least 0.5 at % but at most 5 at % and aluminum at least 5 at % but at most 15 at % when the total number of atoms of copper, magnesium, and aluminum is 100 at %, the highly adhesive barrier film has both adhesion and barrier properties. The electrode layer is suitable because a source electrode layer and a drain electrode layer contact the oxide semiconductor layer. A stopper layer having an oxide may be provided on a layer under the electrode layer.

Abstract: Provided is an electrode layer and a wiring layer, which are free from peeling from a glass substrate. A wiring layer and a gate electrode layer are constituted by an adhering film which is a thin film made of Cu—Mg—Al formed on a surface of a glass substrate, and a copper film formed on the adhering film. When the adhering film includes Mg in a range of at least 0.5 atom % and at most 5 atom %, and aluminum in a range of at least 5 atom % and at most 15 atom %, assuming that the total number of atoms of copper, magnesium and aluminum is taken as 100 atom % , adhesion of the adhering film to the glass substrate becomes high, and the copper thin film is not peeled from the glass substrate. The wiring layer is electrically connected to a pixel electrode of a liquid crystal display device.

Abstract: A technique is provided which prevents an increase in the resistivity of a conductive wiring film. A conductive layer containing Ca in a content rate of 0.3 atom % or more is provided on the surfaces of each of conductive wiring films which are to be exposed to a gas containing a Si atom in a chemical structure at a high temperature. When a gate insulating layer or a protection film containing Si is formed on the surface of the conductive layer, the Si atoms do not diffuse into the conductive layer and a resistance value does not increase, even if the conductive layer is exposed to the raw material gas containing Si in a chemical structure . Further, a CuCaO layer can be formed as an adhesive layer for preventing Si diffusion from a glass substrate or a silicon semiconductor.

Abstract: A manufacturing method of a solar cell including a transparent conductive film formed on a transparent substrate includes the steps of: preparing a target, the target including ZnO and a material including a substance including an Al or a Ga, the ZnO being a primary component of the target; in a first atmosphere including a process gas, applying a sputter electric voltage to the target and forming a first layer included in the transparent conductive film; in a second atmosphere including a greater amount of an oxygen gas compared to the first atmosphere, applying a sputter electric voltage to the target and forming a second layer on the first layer, the second layer being included in the transparent conductive film; and forming an irregular shape by performing an etching process on the transparent conductive film.