Abstract: An electrode according to an embodiment contains an electrode mixture layer containing an active material and a conductive assistant. In a logarithmic differential pore volume distribution by a mercury intrusion method, the electrode mixture layer satisfies: a ratio P1/P2 within a range of 2 or more and less than 8, and a ratio S1/S2 within a range of 3 or more and less than 10. P1 is a value of a maximum logarithmic differential pore volume in a pore diameter range of 0.1 ?m or more and 1 ?m or less. P2 is a value of a logarithmic differential pore volume of a pore diameter of 0.03 ?m. S1 is an integrated value in a pore diameter range of 0.1 ?m or more and 1 ?m or less. S2 is an integrated value in a pore diameter range of more than 0 ?m and less than 0.1 ?m.

Abstract: A Cd-free blue fluorescent quantum dot with a narrow fluorescence FWHM. The quantum dot does not contain cadmium and its fluorescence FWHM is 25 nm or less. The quantum dot is preferably a nanocrystal containing zinc and selenium or zinc and selenium and sulfur. Further, the quantum dot preferably has a core-shell structure in which the nanocrystal serves as a core and the surface of the core is coated with a shell.

Abstract: A metal powder for 3D printer includes a plurality of metal particles. A particle size distribution of the plurality of metal particles has a maximum peak within particle diameters of 1 ?m to 200 ?m. The particle size distribution gives a difference D90?D10 of 10 ?m or more between D90 and D10, D90 denoting a particle diameter in which a cumulative percentage is 90% in volume proportion, and D10 denoting a particle diameter in which a cumulative percentage is 10% in volume proportion.

Abstract: There is provided a light receiving element capable of obtaining a signal with high autofocus performance while suppressing image quality degradation, an imaging device, and a correction processing method. The light receiving element includes: a first pixel that includes a plurality of photoelectric conversion units configured to share a first on-chip lens, receive incident light from a pupil region of an optical system via the first on-chip lens, and perform photoelectric conversion; and a second pixel that includes a plurality of photoelectric conversion units configured to share a second on-chip lens, receive the incident light from the pupil region of the optical system via the second on-chip lens, and perform the photoelectric conversion. The second pixel has lower transmittance on an outer side of the pupil region in which the first pixel is capable of receiving light as compared with the transmittance of the pupil region.

Abstract: Provided is a Cd-free blue fluorescent quantum dot with a narrow fluorescence FWHM. The quantum dot does not contain cadmium and its fluorescence FWHM is 25 nm or less. The quantum dot is preferably a nanocrystal containing zinc and selenium or zinc and selenium and sulfur. Further, the quantum dot preferably has a core-shell structure in which the nanocrystal serves as a core and the surface of the core is coated with a shell.

Abstract: The present disclosure provides a microchannel device that has a channel sandwiched between channel walls formed in an inside of a porous substrate, wherein the channel wall contains a thermoplastic resin and a colorant, and wherein an abundance ratio of the colorant is higher in the porous substrate surface area of the channel wall than in an internal area of the channel wall. In the configuration of the present disclosure, since more of the colorant exist on the surface side of the porous substrate in the channel wall, the visibility of the channel is increased, and in addition, since the amount of the colorant in the internal portion of the channel wall is small, the elution of the ions contained in the colorant into the specimen is suppressed, and the measurement accuracy is increased.

Abstract: It is possible to provide a microchannel device with excellent resistance to bending and suppressed deterioration in inspection accuracy. A microchannel device has a channel sandwiched between channel walls formed in an inside a porous substrate, the channel wall contains a thermoplastic resin and a wax, and a proportion of the wax in an area of a surface side of the channel wall facing the channel is higher than a proportion of the wax inside the channel wall.

Abstract: An imaging device according to an embodiment of the present disclosure includes: a semiconductor substrate which has a first surface and a second surface opposed to each other, and in which a plurality of pixels are arranged in matrix, the semiconductor substrate including a plurality of photoelectric conversion sections that each generate electric charge corresponding to a light receiving amount by photoelectric conversion for each pixel; a first lens disposed for each pixel; a second lens disposed between the semiconductor substrate and the first lens for each photoelectric conversion section; a first separation section provided between adjacent photoelectric conversion sections in each pixel and optically separating the adjacent photoelectric conversion sections from each other; and a second separation section provided between adjacent pixels, optically separating the adjacent pixels from each other, and protruding farther than the first separation section in a light incident direction.

Abstract: According to one embodiment, an electrode group is provided. The electrode group includes a positive electrode active material-containing layer and a negative electrode active material-containing layer. The negative electrode active material-containing layer contains at least one titanium-containing composite oxide selected from the group consisting of a monoclinic niobium titanium composite oxide and an orthorhombic titanium-containing composite oxide. The electrode group satisfies the following formula: 6500?A/B?18500, where A is an area [cm2] of a portion of the negative electrode active material-containing layer that faces the positive electrode active material-containing layer, and B is a thickness [cm] of the electrode group.

Abstract: A quantum dot (QD) dispersion solution includes QD phosphor particles, ligands, and a solvent. Each ligand includes a thiol group and at least one functional group of ester groups and ether groups. The solvent is propylene glycol monomethyl ether acetate.

Abstract: An image pickup element using an APD is provided. The image pickup element has a first substrate, a second substrate, and a connector. The first substrate is provided with a plurality of light receivers having the APD. The second substrate has a pixel circuit that corresponds to each of the APDs. Additionally, the connector electrically connects the APD and the pixel circuit corresponding to the APD.

Abstract: The electroluminescent element includes an anode electrode, a cathode electrode, and a quantum dot (QD) layer including quantum dots and arranged between the anode electrode and the cathode electrode. The quantum dots are Cd-free quantum dots that include at least Zn and Se, and do not include Cd at a mass ratio of 1/30 or greater in relation to Zn. The particle size of each quantum dot is within a range from 3 nm to 20 nm.

Abstract: A method of manufacturing a semiconductor device, including: preparing a power semiconductor chip, a lead frame having a die pad part and a terminal part integrally connected to the die pad part, and an insulating sheet in a semi-cured state; disposing the power semiconductor chip on a front surface of the die pad part and performing wiring; encapsulating the lead frame and the power semiconductor chip with an encapsulation raw material in a semi-cured state, to thereby form a semi-cured unit, the terminal part projecting from the semi-cured unit, and a rear surface of the die pad part being exposed from a rear surface of the semi-cured unit; pressure-bonding a front surface of the insulating sheet to the rear surface of the semi-cured unit to cover the rear surface of the die pad part; and curing the semi-cured unit and the insulating sheet by heating.

Abstract: A semiconductor device manufacturing method includes a molding step including disposing a control pin between an inlet and a control wire and on a line connecting the inlet and the control wire in a plan view of the semiconductor device, injecting molding resin raw material into a cavity through the inlet, filling the cavity with the molding resin raw material, and sealing a semiconductor chip and a control element disposed on a main current lead frame and a control lead frame. In this way, the flow velocity of the molding resin raw material flowing to the control wire is reduced.

Abstract: The present invention provides a facility capable of efficiently performing work while maintaining the cleanliness of a location where an article is manufactured, when manufacturing of the article and other work are performed in parallel concurrently; and an implementation method for manufacturing an article by using the facility. The facility comprises a clean room 1, multiple work booths 2 provided inside the clean room 1 and each comprising an entrance and exit, and barrier sections provided along entrances and exits of the multiple work booth 2 and configured to prevent airflow from the outside to the inside through the entrances and exits. The area inside each of the multiple work booths 2 has the same grade of cleanliness as the area that is outside the multiple work booths 2 but is inside the clean room 1.

Abstract: An imaging apparatus includes a first photoelectric conversion unit configured to convert light into charge, a second photoelectric conversion unit configured to convert light into charge, and a comparison unit. The comparison unit includes a first transistor and a second transistor. The first transistor receives a signal that is based on the charge converted by the first photoelectric conversion unit. The second transistor receives a signal that is based on the charge converted by the second photoelectric conversion unit.

Abstract: In a toner cartridge configured such that, by rotating a toner housing portion relative to a shutter in a state in which a first portion-to-be-engaged is engaged to a first engaging portion of a developing unit, relative positions of a cover and the shutter are displaced from first relative position, in which a closing portion opposes a second opening, to second relative position, in which the interior of the toner housing portion communicates with the developing unit through a first opening and the second opening, and a second portion-to-be-engaged is engaged to a second engaging portion of the developing unit, thereby being attached to the developing unit, a biasing member is provided in order to exert a biasing force for generating relative rotation between the cover and the shutter in a direction for displacing the relative positions thereof from the second relative position to the first relative position.

Abstract: A semiconductor device, including a substrate having an insulating layer and a plurality of circuit patterns formed on the insulating layer, the substrate having a principal surface on which an element region is set. The semiconductor device further includes a plurality of semiconductor elements provided on the plurality of circuit patterns in the element region, a plurality of main terminals that each have a first end joined to one of the plurality of circuit patterns in the element region and a second end extending out of the substrate from a first side of the substrate, a plurality of control terminals disposed in a control region that is adjacent to a second side of the substrate opposite the first side, and a sealing member that seals the principal surface and the control region.

Abstract: An image pickup element using an APD is provided. The image pickup element has a first substrate, a second substrate, and a connector. The first substrate is provided with a plurality of light receivers having the APD. The second substrate has a pixel circuit that corresponds to each of the APDs. Additionally, the connector electrically connects the APD and the pixel circuit corresponding to the APD.

Abstract: The electroluminescent element includes a QD layer and a hole transport layer. QD phosphor particles contained in the QD layer are nanocrystals containing zinc and selenium, or zinc, selenium, and sulfur. A fluorescent half width of the QD phosphor particles is 25 nm or less, and a fluorescent peak wavelength of the QD phosphor particles is 410 nm or more and 470 nm or less. The hole transport layer includes poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,4?-(N-(4-sec-butylphenyl)diphenylamine)]. A film thickness of the hole transport layer is 10 nm or more and 57 nm or less.