Abstract: A semiconductor device includes: element isolation regions; a projecting semiconductor region; a plurality of first gate electrodes each formed on both side surfaces and a top surface of a portion of the projecting semiconductor region, the plurality of first gate electrodes being formed between a pair of opposed end portions of the element isolation regions and being component elements of a plurality of transistors; at least one second gate electrode formed between the first gate electrodes, in the same layer as a layer where the plurality of first gate electrodes are formed, and applied with a voltage for turning off the transistor.

Abstract: A semiconductor device includes: element isolation regions; a projecting semiconductor region; a plurality of first gate electrodes each formed on both side surfaces and a top surface of a portion of the projecting semiconductor region, the plurality of first gate electrodes being formed between a pair of opposed end portions of the element isolation regions and being component elements of a plurality of transistors; at least one second gate electrode formed between the first gate electrodes, in the same layer as a layer where the plurality of first gate electrodes are formed, and applied with a voltage for turning off the transistor.

Abstract: A semiconductor device includes: element isolation regions; a projecting semiconductor region; a plurality of first gate electrodes each formed on both side surfaces and a top surface of a portion of the projecting semiconductor region, the plurality of first gate electrodes being formed between a pair of opposed end portions of the element isolation regions and being component elements of a plurality of transistors; at least one second gate electrode formed between the first gate electrodes, in the same layer as a layer where the plurality of first gate electrodes are formed, and applied with a voltage for turning off the transistor.

Abstract: A semiconductor device includes: element isolation regions; a projecting semiconductor region; a plurality of first gate electrodes each formed on both side surfaces and a top surface of a portion of the projecting semiconductor region, the plurality of first gate electrodes being formed between a pair of opposed end portions of the element isolation regions and being component elements of a plurality of transistors; at least one second gate electrode formed between the first gate electrodes, in the same layer as a layer where the plurality of first gate electrodes are formed, and applied with a voltage for turning off the transistor.

Abstract: A transmission circuit includes: a shift register configured to shift, in synchronization with a first clock signal, input parallel data within a plurality of flip-flop circuits; a control circuit configured to output a second clock signal of a phase in accordance with a phase of the first clock signal; a selector configured to select any one of the input parallel data and pieces of output parallel data of the plurality of flip-flop circuits; and a conversion circuit configured to convert, in synchronization with the second clock signal, the parallel data selected by the selector into pieces of serial data, in which the control circuit outputs a selection signal to the selector, in accordance with a deviation amount of the detected phase of the first clock signal.

Abstract: A transmission circuit includes: a shift register configured to shift, in synchronization with a first clock signal, input parallel data within a plurality of flip-flop circuits; a control circuit configured to output a second clock signal of a phase in accordance with a phase of the first clock signal; a selector configured to select any one of the input parallel data and pieces of output parallel data of the plurality of flip-flop circuits; and a conversion circuit configured to convert, in synchronization with the second clock signal, the parallel data selected by the selector into pieces of serial data, in which the control circuit outputs a selection signal to the selector, in accordance with a deviation amount of the detected phase of the first clock signal.

Abstract: A communication test circuit for allowing a tolerance test to be carried out in a general testing environment. The communication test circuit includes an adder and a second clock generation block. When an offset is input to the adder, the adder adds the offset to a phase adjustment signal for adjusting the phase of a clock signal for data detection and outputs the result to the second clock generation block. The second clock generation block outputs a second clock signal adjusted in accordance with the phase adjustment signal to which the offset has been added. Accordingly, a clock signal shifted in accordance with the offset from a natural clock signal along the time axis is generated at a test.

Abstract: An electrostatic discharge protection circuit and a semiconductor device that prevent the breakdown of a semiconductor device caused by an electrostatic discharge (ESD) which suddenly changes. When voltage which is far higher than VDD1 is applied to a power supply line as a result of an ESD, a great electric potential difference is produced between VDD1 and VSS. At this time an electric current path for making an electric charge generated by overvoltage flow to a grounding line is formed by a clamp circuit. As a result, an electric current flows into GND of a circuit block. This prevents the production of a great electric potential difference between VDD1 and VSS. In addition, at this time a rapid change in the level of the overvoltage applied to a signal line is suppressed by a protection circuit. This prevents the dielectric breakdown of gate oxide films of transistors included in a circuit block which receives a control signal.

Abstract: A communication test circuit for allowing a tolerance test to be carried out in a general testing environment. The communication test circuit includes an adder and a second clock generation block. When an offset is input to the adder, the adder adds the offset to a phase adjustment signal for adjusting the phase of a clock signal for data detection and outputs the result to the second clock generation block. The second clock generation block outputs a second clock signal adjusted in accordance with the phase adjustment signal to which the offset has been added. Accordingly, a clock signal shifted in accordance with the offset from a natural clock signal along the time axis is generated at a test.

Abstract: An electrostatic discharge protection circuit and a semiconductor device that prevent the breakdown of a semiconductor device caused by an electrostatic discharge (ESD) which suddenly changes. When voltage which is far higher than VDD1 is applied to a power supply line as a result of an ESD, a great electric potential difference is produced between VDD1 and VSS. At this time an electric current path for making an electric charge generated by overvoltage flow to a grounding line is formed by a clamp circuit. As a result, an electric current flows into GND of a circuit block. This prevents the production of a great electric potential difference between VDD1 and VSS. In addition, at this time a rapid change in the level of the overvoltage applied to a signal line is suppressed by a protection circuit. This prevents the dielectric breakdown of gate oxide films of transistors included in a circuit block which receives a control signal.