Abstract: An insulating filler composed of a mixed powder in which a hydrophobic fumed oxide powder having an average primary particle size D1, which is smaller than an average primary particle size D2, is adhered to the surface of a magnesium oxide powder and/or a nitride-based inorganic powder having the average primary particle size D2, wherein: the ratio D1/D2 of the average primary particle size D1 to the average primary particle size D2 is 6×10?5 to 3×10?3; the volume resistivity of the mixed powder is 1×1011 ?·m or more; and the content ratio of the hydrophobic fumed oxide powder in the mixed powder is 5-30 mass %. Also provided is an insulating material in which the above-mentioned insulating filler is contained in a resin molded body.

Abstract: An insulating filler composed of a mixed powder in which a hydrophobic fumed oxide powder having an average primary particle size D1, which is smaller than an average primary particle size D2, is adhered to the surface of a magnesium oxide powder and/or a nitride-based inorganic powder having the average primary particle size D2, wherein: the ratio D1/D2 of the average primary particle size D1 to the average primary particle size D2 is 6×10?5 to 3×10?3; the volume resistivity of the mixed powder is 1×1011 ?·m or more; and the content ratio of the hydrophobic fumed oxide powder in the mixed powder is 5-30 mass %. Also provided is an insulating material in which the above-mentioned insulating filler is contained in a resin molded body.

Abstract: A method of transferring electrons with a light energy conversion material is described. The material includes a silica porous material having silicon atoms chemically bonded with an organic group that is an electron donor in a skeleton thereof, and an electron acceptor disposed in at least one portion among a pore, the skeleton and the outer circumference of the porous material. The method includes absorbing light energy by the organic group and transferring electrons excited by the light energy to the electron acceptor.

Abstract: A light energy conversion material that includes a porous material including an electron donor in a skeleton thereof; and an electron acceptor disposed in at least one portion among a pore, the skeleton and the outer circumference of the porous material.

Abstract: A method of transferring electrons with a light energy conversion material is described. The material includes a silica porous material having silicon atoms chemically bonded with an organic group that is an electron donor in a skeleton thereof, and an electron acceptor disposed in at least one portion among a pore, the skeleton and the outer circumference of the porous material. The method includes absorbing light energy by the organic group and transferring electrons excited by the light energy to the electron acceptor.

Abstract: A light energy conversion material, comprising: a porous material having a light-collecting antenna function; and an electron donor and an electron acceptor disposed in at least one portion among a pore, a skeleton and the outer circumference of the porous material.

Abstract: A light energy conversion material, comprising: a porous material including an electron donor in a skeleton thereof; and an electron acceptor disposed in at least one portion among a pore, the skeleton and the outer circumference of the porous material.

Abstract: Thin semiconductor device, especially a thin package, which reduces and achieves uniform mounting height, not requiring mounting of individual chips, improves manufacturing yield, without being affected by variation in chip thickness, enables testing alltogether, and process for producing same, the semiconductor mounted with back surface exposed upward, on top of an insulating substrate having throughholes in thickness direction, the area around semiconductor side surfaces being sealed by a resin layer, metal interconnections on the bottom surface of the substrate define bottom portions of throughholes of the substrate, a solder resist layer having throughholes in the thickness direction covers the bottom surface of metal interconnections and substrate, terminals extending downward from the active surface of the semiconductor are inserted into throughholes of the substrate, conductive filler fills gaps between the terminals and the throughholes of the substrate, and connection terminal and interconnections ar

Abstract: An identification number inserting portion 26 in a multiplexing portion 33 in an audio transmission system 10 inserts a connection identification number for own connection into an audio band signal cell which is to be transmitted via an up line 60. An identification number detecting portion 30B detects that the connection identification number is transmitted again from a switching system 1 to the audio transmission system 10 via a down line 70.

Abstract: A magnetic head includes a pair of magnetic core halves provided with at least metal magnetic films are combined together so that the metal magnetic thin films of one of the pair of magnetic core halves are abutted on the thin films of the other. A winding slot is provided in the abutting portions between the pair of magnetic core halves to form a front gap and back gap on both sides of the winding slot. The pair of magnetic core halves are bonded together with first bonding glass adjacent to the back gap, and second bonding glass adjacent to the front gap, which as a thermal expansion coefficient higher than that of the first bonding glass.

Abstract: A semiconductor device, in particular a thin semiconductor package, which reduces and simultaneously achieves a uniform mounting height, does not require complicated steps for mounting individual chips, improves the manufacturing yield, achieves a uniform height of the semiconductor device without being affected by the variation in thickness of the chip, and enables execution of an electrical test all together, and a process for production of the same, wherein a semiconductor is mounted, with its back surface exposed upward, on the top surface of an insulating tape substrate having through holes in the thickness direction, the area around the side surfaces of the semiconductor element is sealed by a sealing resin layer, metal interconnections formed on the bottom surface of the tape substrate define the bottom portions of the through holes of the tape substrate, a solder resist layer having through holes in the thickness direction covers the bottom surface of the metal interconnections and the tape substrate,

Abstract: The absolute values of the apparent magnetocrystalline anisotropic energy K1 is made large to increase the absolute value of the crystal magnetic anisotropy energy by adjusting the content of Fe.sub.2 O.sub.3 in the single crystal ferrite to 50 to 52 mol % or 55 to 58 mol %, thereby the absolute value of the apparent magnetic anisotropic energy is increased. Accordingly, the magnetic pole at the demagnetization time is stabilized and noise fluctuation is suppressed to a low level.

Abstract: An FIFO memory device which is used for digital communication devices and the like comprises a plurality of D-flip flops cascade-connected with each other for storing data; selectors connected between the D-flip flops for selecting an input data or a data to be stored which is outputted from the D-flip flop on the previous stage; and control circuits responsive to a clock signal, a write signal and a read signal for controlling the storing operation of the D-flip flops and the selection operation of the selectors. The control circuit stores a signal representative of presence or absence of data stored in the D-flip flops and performs control in such a manner that an input data is transferred to the D-flip flop on the final stage in which no data has been written for writing the data therein in response to a write signal and that data on respective D-flip flops are simultaneously shifted to the D-flip flop on the subsequent stage on every clock in response to a read signal.

Abstract: A sequence controller having a memory for storing predetermined control sequences, an operation device for sequentially reading the contents of the memory and executing the control sequences stored therein in accordance with externally supplied instructions, a programming panel for reading and displaying data from the memory and for writing the control sequence in the memory, bus lines coupled to the operation device and the panel, respectively, to permit parallel operation thereof without lowering the processing speed and to permit programming of the operation device without using conventional input-output instructions by supplying input and output data for operating an external controlled process from the operation device via an output memory.