Patents by Inventor Masao Hayashi, deceased

Masao Hayashi, deceased has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor integrated circuit including a DRAM and an analog circuit
    Patent number: 7118957
    Abstract: A semiconductor device including an interlayer insulation film formed on a substrate so as to cover first and second regions defined on the substrate, and a capacitor formed over the interlayer insulation film in the first region, wherein the interlayer insulation film includes, in the first region, a stepped part defined by a groove having a bottom surface lower in level than a surface of the interlayer insulation film in the second region.
    Type: Grant
    Filed: April 10, 2003
    Date of Patent: October 10, 2006
    Assignee: Fujitsu Limited
    Inventors: Tadaaki Hayashi, legal representative, Taiji Ema, Narumi Ohkawa, Masao Hayashi, deceased