Patents by Inventor Masao Higeta

Masao Higeta has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Process for producing sputtering targets
    Patent number: 6248291
    Abstract: A process for producing sputtering targets, which comprises molding a mixture of a powder of a high-melting substance having a melting point of 900° C. or above with a powder of a low-melting metal having a melting point of 700° C. or below at a temperature below the melting point of the low-melting metal under heat and pressure.
    Type: Grant
    Filed: December 12, 1997
    Date of Patent: June 19, 2001
    Assignee: Asahi Glass Company Ltd.
    Inventors: Susumu Nakagama, Masao Higeta, Atsushi Hayashi
  • Transparent conductive film and method for its production, and sputtering target
    Patent number: 6146765
    Abstract: A transparent conductive film of a zinc oxide type containing gallium and silicon, which contains silicon in an amount of from 0.01 to 1.5 mol % in terms of SiO.sub.2.
    Type: Grant
    Filed: August 18, 1997
    Date of Patent: November 14, 2000
    Assignee: Asahi Glass Company Ltd.
    Inventors: Akira Mitsui, Kazuo Sato, Masami Miyazaki, Junichi Ebisawa, Yasuo Hayashi, Masao Higeta, Katsuaki Aikawa, Atsushi Hayashi
  • Transparent conductive film and method for its production, and sputtering target
    Patent number: 5736267
    Abstract: A transparent conductive film of a zinc oxide type containing gallium and silicon, which contains silicon in an amount of from 0.01 to 1.5 mol % in terms of SiO.sub.2.
    Type: Grant
    Filed: August 16, 1995
    Date of Patent: April 7, 1998
    Assignee: Asahi Glass Company Ltd.
    Inventors: Akira Mitsui, Kazuo Sato, Masami Miyazaki, Junichi Ebisawa, Yasuo Hayashi, Masao Higeta, Katsuaki Aikawa, Atsushi Hayashi