Abstract: The solid-state image sensor of this invention includes an array of pixels and light-transmitting portions 30a, 30b, 30c, 30d. The array is divided into unit pixel blocks, each of which is made up of N pixels (where N is an integer that is equal to or greater than two). The light-transmitting portions are arranged so that each light-transmitting portion faces an associated one of the pixels. Each of the light-transmitting portions is divided into M striped areas (where M is an integer that is equal to or greater than two). The respective areas have had their optical transmittances set independently of each other. The arrangement pattern of the optical transmittances of the light-transmitting portions 30a, 30b, 30c, 30d vary from one block to another.

Abstract: A solid-state image sensor according to the present invention includes: a semiconductor layer (100 with first and second surfaces (100a, 100b), the second surface (100b) being opposite to the first surface (100a); a plurality of photosensitive cells (1a, 1b, etc.), which are arranged two-dimensionally in the semiconductor layer (100) between the first and second surfaces thereof (100a, 100b); a first array (200) of micro condenser lenses, which are arranged on the same side as the first surface (100a) to focus incoming light onto a first group of photosensitive cells that are included in those photosensitive cells; and a second array (300) of micro condenser lenses, which are arranged on the same side as the second surface (100b) to focus incoming light onto a second group of photosensitive cells that are also included in those photosensitive cells but that are different from the first group of photosensitive cells.

Abstract: An imaging photodetection device (4) includes: a plurality of photodetectors (6) that are arrayed on a substrate (5) at least along a first direction; a transparent low refractive index layer (12) that is formed above the plurality of photodetectors; and a plurality of transparent high refractive index sections (13) that are embedded in the transparent low refractive index layer along the first direction. On a cross-section of the transparent high refractive index sections orthogonal to the substrate and along the first direction, central axes (14) of the transparent high refractive index sections are bent stepwise. Light that enters the transparent low refractive index layer and the transparent high refractive index section passes therethrough to be separated into 0th-order diffracted light, 1st-order diffracted light, and ?1st-order diffracted light. Thereby, improvement in the efficiency of light utilization and pixel densification can be realized.

Abstract: In an image capture device according to the present invention, a number of photosensitive cells are arranged between a first surface 30a of a semiconductor layer and its second surface 30b, which is opposed to the first surface, and the device can receive incoming light at not only the first surface 30b but also the second surface 30b as well. The device further includes an optical system 300 with an optical element 9 for splitting the incoming light into first and second light rays. The optical system 300 is designed so as to make the first and second light rays strike the first and second surfaces 30a and 30b, respectively.

Abstract: A solid-state image sensor according to the present invention includes: a semiconductor layer 7, which has a first surface and a second surface that is opposite to the first surface; a photosensitive cell array, which has been formed in the semiconductor layer 7 to receive light through both of the first and second surfaces; and at least one dispersive element array, which is arranged on the same side as at least one of the first and second surfaces so as to face the photosensitive cell array. The photosensitive cell array includes first and second photosensitive cells 2a and 2b. And the dispersive element array makes light rays falling within mutually different wavelength ranges incident on the first and second photosensitive cells 2a and 2b, respectively.

Abstract: A solid-state image sensor according to the present invention includes a number of photosensitive cells 2b, 2c that are arranged in between the first surface 30a of a semiconductor layer 30 and its second surface 30b, which is opposite to the first surface 30a and which receives incoming light. As viewed from the photosensitive cells 2b, 2c, a reflecting portion 3a is arranged on the same side as the first surface 30a in order to reflect an infrared ray that has been transmitted through the photosensitive cell 2c and make it incident on one of the photosensitive cells 2b, 2c. As a result, the intensities of infrared rays to be converted photoelectrically by the photosensitive cells 2b, 2c will be different from each other. And by calculating the difference between the photoelectrically converted signals supplied from the photosensitive cells 2b, 2c, the infrared ray component received by each photosensitive cell can be obtained.

Abstract: A mirror 1a transmits a cyan (Cy) ray and reflects an R ray, and a mirror 1d transmits a yellow (Ye) ray and reflects a B ray. The mirrors 1a and 1d are arranged inside a light-transmitting member 3 and are also tilted so that the light reflected from each of them is further reflected from the interface between the light-transmitting member 3 and the air and then incident on an adjacent photosensitive cell. Photosensitive cells 2a and 2d receive the light rays that have been transmitted through the mirrors 1a and 1d, respectively. No mirrors are arranged over photosensitive cells 2b and 2c. The photosensitive cell 2b receives directly incident light and the light ray reflected from the mirror 1a. The photosensitive cell 2c receives the directly incident light and the light ray reflected from the mirror 1d. Color information is obtained by making computations on the output signals of the respective photosensitive cells.

Abstract: A color representation technique to be effectively applicable to a pixel shifted arrangement to realize high sensitivity and high resolution is provided by using a dipersive prism or diffraction. A dispersive element is provided for an image sensor in which photosensitive cells are arranged to be shifted from each other by a half pitch both horizontally and vertically. The dispersive element makes at least G rays fall straight down to a pixel right under itself and also makes either R rays or B rays incident on an adjacent pixel. Meanwhile, a photosensitive cell, for which no dispersive element is provided, receives directly incident light, too. Color information can be obtained by making computations on photoelectrically converted signals provided by these pixels.

Abstract: The solid state image sensor of this invention includes multiple units, each of which includes first and second photosensitive cells 2a, 2b and a dispersive element 1a facing the first cell 2a. The element 1a passes a part of incoming light with a first color component to the second cell 2b. The first cell 2a receives a smaller quantity of light with the first color component than that of the light with the first color component incident on the dispersive element. The second cell 2b receives a greater quantity of light with the first color component than that of the light with the first color component incident on the dispersive element.

Abstract: A solid-state imaging device according to the present invention includes, on an imaging surface, a plurality of unit pixel regions being arrayed at a first pixel pitch along a Y direction and at a second pixel pitch along an X direction. One of two adjoining unit pixel regions 1 along the Y first direction includes a first photodetecting portion 1a having a first opening ratio, and the other includes a second photodetecting portion 1b having a second opening ratio which is lower than the first opening ratio. When the first photodetecting portion 1a is moved imaginarily by a first pixel pitch along the Y direction, the first photodetecting portion 1a covers the entire second photodetecting portion 1b. At this time, a portion of the first photodetecting portion 1a that does not cover the second photodetecting portion 1b functions as an imaginary third photodetecting portion.

Abstract: Light-splitting elements are arranged in at least two columns and two rows to form two pairs 1a, 1b and 1c, 1d. Each element splits incident light into light rays and makes them fall on a portion of a photosensing section right under itself and an adjacent photosensitive cell. The element 1a splits the incident light so that a primary color ray C1 and its complementary color ray C1? enter an adjacent cell 2b and an underlying cell 2a, respectively. The element 1b makes a primary color ray C2 and its complementary color ray C2? enter an underlying cell 2a and an adjacent cell 2a, respectively. The element 1c does the same as the element 1b. And the element 1d makes a primary color ray C3 and its complementary color ray C3? enter an adjacent cell 2c and an underlying cell 2d, respectively. These photosensitive cells 2 perform photoelectric conversion, thereby outputting an electrical signal representing the intensity of the incident light.

Abstract: To provide an image matching apparatus that realizes a new method for comparing two images which differ in sizes and orientations. In an image recognition system, for each of two plane images on which two-dimensional orthogonal wavelet decomposition has been performed, a two-dimensional feature information generating unit detects large spatial gradients in the horizontal and vertical directions of the plane image and expresses the spatial gradients as two-dimensional vectors that are present in spatial positions of the plane image. Next, a three-dimensional vector generating unit uses one of the spatial positions and a direction of a two-dimensional vector present in the spatial position respectively as a reference point and a reference direction, to express the other two-dimensional vectors using three-dimensional vectors which are each made up of a magnitude component and two angle components.

Abstract: A color filter is constituted by unit arrays of two columns and four rows of filter elements. The first column has cyan, magenta, cyan, and green (or green, yellow, green and cyan) filter elements which are arranged in that order and the second column has yellow, green, yellow, and magenta (or magenta, cyan, magenta and yellow filter elements which are arranged in that order. A solid state image apparatus having an expanded dynamic range is realized by using this color filter in that the dynamic range of the photoelectric elements corresponding to the green filter elements can be utilized more efficiently.

Abstract: A method for driving a solid-state image sensor in which the bias charges in a horizontal readout CCD (charge-coupled device) shift register are transferred onto vertical signal lines with the signal charges and then the signal and bias charges are transferred back into the horizontal readout CCD shift register from which are read out the signal charges (generated at the photosensor or photodiodes).