Patents by Inventor Masao Iimura

Masao Iimura has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of manufacturing low power loss semiconductor device
    Patent number: 3968019
    Abstract: By forming a metallic coating on a sufficiently cleaned semiconductor substrate through ion plating, a low power loss and high switching speed semiconductor device is obtained which differs from an ordinary semiconductor device with a diffused junction. In an interface between the metallic coating and the semiconductor substrate, a considerably thin metal-injected layer is formed toward the semiconductor substrate. Schottky barrier devices may be formed by the method of the invention.
    Type: Grant
    Filed: March 21, 1975
    Date of Patent: July 6, 1976
    Assignee: Hitachi, Ltd.
    Inventors: Masanobu Hanazono, Osamu Asai, Moriaki Fuyama, Masao Iimura, Hideyuki Yagi, Masahiro Okamura