Abstract: A surface acoustic wave device includes a surface acoustic wave chip having a piezoelectric substrate on which comb-like electrodes and electrode pads are formed, a package housing the surface acoustic wave chip, and electrode patterns provided on a bottom surface of the package. The bottom surface of the package is wider than a top surface of the package. The electrode patterns are away from edges of the bottom surface of the package.

Abstract: A surface acoustic wave device includes a surface acoustic wave chip having a piezoelectric substrate on which comb-like electrodes and electrode pads are formed, and a package housing the surface acoustic wave chip, a first surface of the package including an opening of the cavity being wider than a second surface of the package opposite to the first surface.

Abstract: A surface acoustic wave device includes a surface acoustic wave chip having a piezoelectric substrate on which comb-like electrodes and electrode pads are formed, a package housing the surface acoustic wave chip, and electrode patterns provided on a bottom surface of the package. The bottom surface of the package is wider than a top surface of the package. The electrode patterns are away from edges of the bottom surface of the package.

Abstract: A surface acoustic wave device includes a surface acoustic wave chip having a piezoelectric substrate on which comb-like electrodes and electrode pads are formed, and a package housing the surface acoustic wave chip, a first surface of the package including an opening of the cavity being wider than a second surface of the package opposite to the first surface.

Abstract: A surface acoustic wave device is obtained at low cost in a small size while good airtightness of a vacant portion is maintained. For this purpose, the surface of a surface acoustic wave element, on which an inter digital transducer is formed, is connected to a flat-plate substrate by means of a bump with a vacant portion formed between them. In this structure, a stepped portion having a step is formed on the surface of the substrate at the edge. When the surface of the stepped portion and the outer surface of the surface acoustic wave element are covered together with a hardening resin, the hardening resin coincides with the stepped portion to attain the airtightness of the vacant portion.

Abstract: A built-in resistor for cathode-ray tube which comprises an insulating substrate, a resistance layer formed on one main surface of the insulating substrate, a plurality of terminal electrodes mounted on the resistance layer, and a plurality of terminals connected respectively with the terminal electrodes, wherein the plurality of terminals are individually constituted by a base body made of a non-magnetic alloy, and by a surface layer which is formed on the surface of the base body and made of an oxide of the non-magnetic alloy, the plurality of terminals have a relative permeability of not more than 1.005, and the surface layer of each of the terminals is partially provided with an insulating covering layer. The nonmagnetic alloy is a Ni—Cr-based alloy, and the surface layer is formed through an oxidation treatment under a condition where the formation of NiO can be suppressed.

Abstract: A built-in resistor for cathode-ray tube which comprises an insulating substrate, a resistance layer formed on one main surface of the insulating substrate, a plurality of terminal electrodes mounted on the resistance layer, and a plurality of terminals connected respectively with the terminal electrodes, wherein the plurality of terminals are individually constituted by a base body made of a non-magnetic alloy, and by a surface layer which is formed on the surface of the base body and made of an oxide of the non-magnetic alloy, the plurality of terminals have a relative permeability of not more than 1.005, and the surface layer of each of the terminals is partially provided with an insulating covering layer. The nonmagnetic alloy is a Ni—Cr-based alloy, and the surface layer is formed through an oxidation treatment under a condition where the formation of NiO can be suppressed.