Patents by Inventor Masao Jojima

Masao Jojima has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Electrostatic micro switch, production method thereof, and apparatus provided with electrostatic micro switch
    Patent number: 7719066
    Abstract: An electrostatic micro switch includes a fixed electrode disposed on a fixed substrate; a movable substrate elastically supported by the fixed substrate, the movable substrate including a movable electrode facing the fixed electrode. The movable substrate includes a semiconductor including a plurality of regions having different values of resistivity and a region of high resistivity is disposed near the movable electrode.
    Type: Grant
    Filed: March 16, 2006
    Date of Patent: May 18, 2010
    Assignee: OMRON Corporation
    Inventors: Koji Sano, Isamu Kimura, Masao Jojima
  • Driving device, optical scanning device, and object information detecting device
    Publication number: 20070269199
    Abstract: A driving device includes: a movable frame; a frame shaped supporting body arranged on an outer side of the movable frame; and bending drive elements arranged on a surface of the movable frame. The supporting body and the movable frame each have two sets of opposing sides. Supporting parts arranged on first set of opposing sides of the supporting body support first set of opposing sides of the movable frame. The bending drive elements are arranged on the first set of opposing sides of the movable frame. A region arranged with the bending drive elements of the movable frame bends in a thickness direction of the movable frame.
    Type: Application
    Filed: May 16, 2007
    Publication date: November 22, 2007
    Applicant: OMRON Corporation
    Inventors: Yoshikazu Mori, Masao Jojima, Hiroshi Imamoto
  • Antistatic mechanism of an electrostatic actuator
    Patent number: 7161273
    Abstract: A fixed voltage and a movable electrode are placed face to face with each other, and an insulating film is formed on the surface of the fixed electrode. The insulating film is made of a nitride film (SiN) as a main material, with oxide films (SiO2) being formed on the front and rear surfaces of the nitride film. Moreover, a plurality of protrusions are formed on an area facing the movable electrode of the upper face of the insulating film. The charge quantity in the insulating film is mainly determined by a film thickness of the oxide film, and the nitride film is used for maintaining a sufficient film thickness required for the voltage proof characteristic.
    Type: Grant
    Filed: November 4, 2002
    Date of Patent: January 9, 2007
    Assignee: Omron Corporation
    Inventors: Akira Akiba, Keisuke Uno, Masao Jojima, Tomonori Seki, Koji Sano
  • Electrostatic micro switch, production method thereof, and apparatus provided with electrostatic micro switch
    Publication number: 20060208328
    Abstract: An electrostatic micro switch includes a fixed electrode disposed on a fixed substrate; a movable substrate elastically supported by the fixed substrate, the movable substrate including a movable electrode facing the fixed electrode. The movable substrate includes a semiconductor including a plurality of regions having different values of resistivity and a region of high resistivity is disposed near the movable electrode.
    Type: Application
    Filed: March 16, 2006
    Publication date: September 21, 2006
    Applicant: OMRON Corporation
    Inventors: Koji Sano, Isamu Kimura, Masao Jojima
  • Electrostatic actuator, and electrostatic microrelay and other devices using the same
    Publication number: 20030102771
    Abstract: A fixed voltage and a movable electrode are placed face to face with each other, and an insulating film is formed on the surface of the fixed electrode. The insulating film is made of a nitride film (SiN) as a main material, with oxide films (SiO2) being formed on the front and rear surfaces of the nitride film. Moreover, a plurality of protrusions are formed on an area facing the movable electrode of the upper face of the insulating film. The charge quantity in the insulating film is mainly determined by a film thickness of the oxide film, and the nitride film is used for maintaining a sufficient film thickness required for the voltage proof characteristic.
    Type: Application
    Filed: November 4, 2002
    Publication date: June 5, 2003
    Inventors: Akira Akiba, Keisuke Uno, Masao Jojima, Tomonori Seki, Koji Sano