Abstract: A semiconductor laser element includes a ridge, and includes: a p-type first clad layer; and a p-type second clad layer arranged on the p-type first clad layer, the p-type first clad layer has a superlattice structure of an AlxGa1-xN layer and an AlyGa1-yN layer (0?x?y?1), the p-type second clad layer includes AlzGa1-zN (0?z?y), the p-type first clad layer includes: a flat portion on which the p-type second clad layer is not arranged; and a protruding portion which protrudes upward from the flat portion and on which the p-type second clad layer is arranged, and the height of the protruding portion protruding from the flat portion is less than the thickness of the p-type first clad layer in the flat portion.

Abstract: A semiconductor light-emitting device includes: a semiconductor light-emitting element; a submount configured to have mounted thereon the semiconductor light-emitting element; and the like. The semiconductor light-emitting element includes a light guide layer, and a taper waveguide configured to cause light generated in the light guide layer to propagate. An equivalent refractive index of the taper waveguide is, in a predetermined range from an end face of the taper waveguide, higher at a center in a width direction of the taper waveguide than on outer sides in the width direction of the taper waveguide.

Abstract: A semiconductor laser device includes: a first semiconductor layer of a first conductivity type; a light emitting layer formed above the first semiconductor layer; a second semiconductor layer of a second conductivity type formed above the light emitting layer; and an electrode formed above a ridge portion formed in the second semiconductor layer. The electrode is divided at positions at which an integrated value of light intensities of higher-order mode oscillation has a local maximum.

Abstract: A semiconductor laser device includes: a first semiconductor layer of a first conductivity type; a light emitting layer formed above the first semiconductor layer; a second semiconductor layer of a second conductivity type formed above the light emitting layer; and an electrode formed above a ridge portion formed in the second semiconductor layer. The electrode is divided at positions at which an integrated value of light intensities of higher-order mode oscillation has a local maximum.

Abstract: A nitride semiconductor laser element includes an electron barrier layer between a p-side light guide layer and a p-type clad layer. The electron barrier layer has a bandgap energy larger than that of the p-type clad layer. The p-side light guide layer is made of AlxGa1?xN containing no Indium, where 0?x<1. A film thickness dn of the n-side light guide layer and a film thickness dp of the p-side light guide layer satisfy relationships dp?0.25 ?m and dn?dp.

Abstract: A nitride semiconductor laser element includes an electron barrier layer between a p-side light guide layer and a p-type clad layer. The electron barrier layer has a bandgap energy larger than that of the p-type clad layer. The p-side light guide layer is made of AlxGa1?xN containing no Indium, where 0 ?x<1. A film thickness dn of the n-side light guide layer and a film thickness dp of the p-side light guide layer satisfy relationships dp?0.25 ?m and dn?dp.

Abstract: A semiconductor light emitting element includes an n-type light guide layer containing a group III nitride semiconductor, an active layer, and a p-type light guide layer, in which the n-type light guide layer includes a semiconductor superlattice layer which is a stack of superlattice layers, the semiconductor superlattice layer having a structure in which group III nitride semiconductors A and group III nitride semiconductors B are alternately stacked, each of the semiconductors A and each of the semiconductors B being stacked in each of the superlattice layers, a relationship Eg (A)>Eg (B) holds, the semiconductor A is a film containing AlInN, and the film contains oxygen (O) at a concentration of at least 1×1018 cm?3, the semiconductor A has a film thickness of at most 5 nm, and a current is injected in a stacking direction of the superlattice layers.

Abstract: A semiconductor light emitting element includes an n-type light guide layer containing a group III nitride semiconductor, an active layer, and a p-type light guide layer, in which the n-type light guide layer includes a semiconductor superlattice layer which is a stack of superlattice layers, the semiconductor superlattice layer having a structure in which group III nitride semiconductors A and group III nitride semiconductors B are alternately stacked, each of the semiconductors A and each of the semiconductors B being stacked in each of the superlattice layers, a relationship Eg (A)>Eg (B) holds, the semiconductor A is a film containing AlInN, and the film contains oxygen (O) at a concentration of at least 1×1018 cm?3, the semiconductor A has a film thickness of at most 5 nm, and a current is injected in a stacking direction of the superlattice layers.

Abstract: A semiconductor laser device includes a semiconductor-layer lamination (20) having an active layer (26) formed over a substrate (11). The semiconductor-layer lamination (20) includes a front face which emits light, a strip-shaped optical waveguide formed in a direction transverse to the front face, a first region (20A) extending in a direction transverse to the front face, a second region (20B) having a top surface whose height is different from that of the first region (20A), and a planar region (20C) formed between the first region (20A) and the second region (20B), and having periodic surface undulations whose variation is smaller than that of the second region (20B). The optical waveguide is formed in the planar region (20C).

Abstract: A semiconductor laser device includes a semiconductor multilayer structure selectively grown on a substrate other than on a predetermined region of the substrate. The semiconductor multilayer structure includes an active layer, and has a stripe-shaped optical waveguide extending in a direction intersecting a front facet through which light is emitted. The active layer has an abnormal growth portion formed at a peripheral edge of the predetermined region, and a larger forbidden band width portion formed around the abnormal growth portion and having a larger width of a forbidden band than that of a portion other than the abnormal growth portion of the active layer. The optical waveguide is spaced apart from the abnormal growth portion and includes the larger forbidden band width portion at the front facet.

Abstract: A resin composition comprises a polyimide resin composition or precursor thereof obtained from an acid dianhydride component containing a compound represented by the following Formula (1) and a diamine component containing a diamine compound represented by the following Formula (2), and a bismaleimide compound represented by the following Formula (3), wherein the diamine component contains a diamine compound (a) in which m in the Formula (2) represents an integer of 0 or 1 and a diamine component (b) in which m in the Formula (2) represents an integer of 2 to 6 in a molar ratio (a:b) of from 100:0 to 50:50, wherein, in the Formula (2), when m is 2 or more, each X may be independently the same or different, and represents O, SO2, S, CO, CH2, C(CH3)2, C(CF3)2 or a direct bond, wherein, in the Formula (3), n represents an integer of 0 to 6.

Abstract: A p-type GaN guiding layer, an n-type GaN layer, and an n-type AlGaN current blocking layer are sequentially formed over an active layer, and then part of the current blocking layer is etched by using an alkali solution and irradiating the part with light to form an opening. Thereafter, a second p-type GaN guiding layer is formed on the current blocking layer to cover the opening. In this structure, the GaN layer has a smaller energy gap than the AlGaN current blocking layer.

Abstract: A semiconductor laser device includes a multilayer structure made of group III nitride semiconductors formed on a substrate. The multilayer structure includes a MQW active layer, and also includes a step region selectively formed in an upper portion thereof. In another upper portion of the multilayer structure, a ridge stripe portion including a waveguide, which extends in parallel to a principal surface of the multilayer structure, is formed. In the vicinity of the step region, a first region, in which the MQW active layer has a bandgap energy of Eg1, is formed, and a second region, which is adjacent to the first region and in which the MQW active layer has a bandgap energy of Eg2 (Eg2<Eg1), is formed. The waveguide, which is formed so as to include the first and second regions and so as not to include the step region, performs self-oscillation.

Abstract: There is provided a sputtering method in which abnormal discharging due to charge-up of a to-be-processed substrate is restrained and in which a good transparent conductive film can be formed on a to-be-processed large-area substrate. Out of a plurality of targets disposed side by side with, and at a predetermined distance from, one another so as to lie opposite to the to-be-processed substrate inside a sputtering chamber, electric power is applied, by alternately changing polarity at a predetermined frequency, to the targets that form respective pairs. Each target is thus alternately switched to anode electrode and cathode electrode. Glow discharge is thus generated between the anode electrode and the cathode electrode to thereby form plasma atmosphere, whereby each target is sputtered. During sputtering, electric power application to each of the targets is intermittently stopped.

Abstract: A semiconductor laser device includes a semiconductor multilayer structure selectively grown on a substrate other than on a predetermined region of the substrate. The semiconductor multilayer structure includes an active layer, and has a stripe-shaped optical waveguide extending in a direction intersecting a front facet through which light is emitted. The active layer has an abnormal growth portion formed at a peripheral edge of the predetermined region, and a larger forbidden band width portion formed around the abnormal growth portion and having a larger width of a forbidden band than that of a portion other than the abnormal growth portion of the active layer. The optical waveguide is spaced apart from the abnormal growth portion and includes the larger forbidden band width portion at the front facet.

Abstract: A semiconductor laser device includes a semiconductor-layer lamination (20) having an active layer (26) formed over a substrate (11). The semiconductor-layer lamination (20) includes a front face which emits light, a strip-shaped optical waveguide formed in a direction transverse to the front face, a first region (20A) extending in a direction transverse to the front face, a second region (20B) having a top surface whose height is different from that of the first region (20A), and a planar region (20C) formed between the first region (20A) and the second region (20B), and having periodic surface undulations whose variation is smaller than that of the second region (20B). The optical waveguide is formed in the planar region (20C).

Abstract: A semiconductor laser device has a stacked structure formed on a main surface of a substrate (1) and including an MQW active layer (5) made of a group-III nitride semiconductor. The stacked structure has a stripe-shaped waveguide formed on a main surface thereof. One of opposing facets of the waveguide is a light emitting facet. A first region having a forbidden band width Eg1 in the MQW active layer (5), and a second region located adjacent to the first region and having a forbidden band width Eg2 in the MQW active layer (5) (where Eg2?Eg1) are formed around the recess (2). The waveguide is formed so as to include the first region and the second region, and so as not to include the stepped region. The light emitting facet is formed in one (5a) of the first region and the second region, which has a shorter light absorption wavelength.

Abstract: A semiconductor laser device includes a multilayer structure made of group III nitride semiconductors formed on a substrate. The multilayer structure includes a MQW active layer, and also includes a step region selectively formed in an upper portion thereof. In another upper portion of the multilayer structure, a ridge stripe portion including a waveguide, which extends in parallel to a principal surface of the multilayer structure, is formed. In the vicinity of the step region, a first region, in which the MQW active layer has a bandgap energy of Eg1, is formed, and a second region, which is adjacent to the first region and in which the MQW active layer has a bandgap energy of Eg2 (Eg2<Eg1), is formed. The waveguide, which is formed so as to include the first and second regions and so as not to include the step region, performs self-oscillation.

Abstract: Disclosed is a polyimide metal laminate having a metal layer with high adhesiveness. This polyimide metal laminate is suitable as a material for high-density circuit boards. Specifically disclosed is a polyimide film characterized by being surface-treated with an aqueous solution containing an alcohol amine and an alkali metal hydroxide. Also specifically disclosed is a polyimide metal laminate obtained by providing the surface of such a polyimide film with a thermoplastic polyimide and then forming a metal layer on the outer side of the thermoplastic polyimide layer. Further specifically disclosed is a method for manufacturing such a polyimide metal laminate.

Abstract: A resin composition comprises a polyimide resin composition or precursor thereof obtained from an acid dianhydride component containing a compound represented by the following Formula (1) and a diamine component containing a diamine compound represented by the following Formula (2), and a bismaleimide compound represented by the following Formula (3), wherein the diamine component contains a diamine compound (a) in which m in the Formula (2) represents an integer of 0 or 1 and a diamine component (b) in which m in the Formula (2) represents an integer of 2 to 6 in a molar ratio (a:b) of from 100:0 to 50:50, wherein, in the Formula (2), when m is 2 or more, each X may be independently the same or different, and represents O, SO2, S, CO, CH2, C(CH3)2, C(CF3)2 or a direct bond, wherein, in the Formula (3), n represents an integer of 0 to 6.