Patents by Inventor Masao Kawaguchi

Masao Kawaguchi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210028598
    Abstract: A semiconductor laser device includes: a first semiconductor layer of a first conductivity type; a light emitting layer formed above the first semiconductor layer; a second semiconductor layer of a second conductivity type formed above the light emitting layer; and an electrode formed above a ridge portion formed in the second semiconductor layer. The electrode is divided at positions at which an integrated value of light intensities of higher-order mode oscillation has a local maximum.
    Type: Application
    Filed: August 23, 2017
    Publication date: January 28, 2021
    Applicant: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
    Inventors: Masao KAWAGUCHI, Shinichi TAKIGAWA, Nozomi NAKA
  • Patent number: 10509896
    Abstract: An image forming apparatus including a communication circuit configured to establish proximity communication with a biometric authentication apparatus, a display, and a processor configured to perform authentication processing with biological information detected by the biometric authentication apparatus is provided. The processor is configured to carry out control for reducing a quantity of light output from the display and incident on the biometric authentication apparatus during detection of the biological information by the biometric authentication apparatus when the processor receives information representing optical detection of the biological information by the biometric authentication apparatus from the biometric authentication apparatus through the communication circuit.
    Type: Grant
    Filed: November 15, 2017
    Date of Patent: December 17, 2019
    Assignee: KONICA MINOLTA, INC.
    Inventors: Masao Hosono, Kaitaku Ozawa, Kenichi Takahashi, Toshikazu Kawaguchi, Daisuke Nakano, Tomoaki Nakajima
  • Patent number: 10141720
    Abstract: A nitride semiconductor laser element includes an electron barrier layer between a p-side light guide layer and a p-type clad layer. The electron barrier layer has a bandgap energy larger than that of the p-type clad layer. The p-side light guide layer is made of AlxGa1?xN containing no Indium, where 0?x<1. A film thickness dn of the n-side light guide layer and a film thickness dp of the p-side light guide layer satisfy relationships dp?0.25 ?m and dn?dp.
    Type: Grant
    Filed: January 9, 2018
    Date of Patent: November 27, 2018
    Assignee: PANASONIC CORPORATION
    Inventors: Masao Kawaguchi, Osamu Imafuji, Shinichiro Nozaki, Hiroyuki Hagino
  • Publication number: 20180131161
    Abstract: A nitride semiconductor laser element includes an electron barrier layer between a p-side light guide layer and a p-type clad layer. The electron barrier layer has a bandgap energy larger than that of the p-type clad layer. The p-side light guide layer is made of AlxGa1?xN containing no Indium, where 0 ?x<1. A film thickness dn of the n-side light guide layer and a film thickness dp of the p-side light guide layer satisfy relationships dp?0.25 ?m and dn?dp.
    Type: Application
    Filed: January 9, 2018
    Publication date: May 10, 2018
    Inventors: MASAO KAWAGUCHI, Osamu Imafuji, Shinichiro Nozaki, Hiroyuki Hagino
  • Patent number: 9214788
    Abstract: A semiconductor light emitting element includes an n-type light guide layer containing a group III nitride semiconductor, an active layer, and a p-type light guide layer, in which the n-type light guide layer includes a semiconductor superlattice layer which is a stack of superlattice layers, the semiconductor superlattice layer having a structure in which group III nitride semiconductors A and group III nitride semiconductors B are alternately stacked, each of the semiconductors A and each of the semiconductors B being stacked in each of the superlattice layers, a relationship Eg (A)>Eg (B) holds, the semiconductor A is a film containing AlInN, and the film contains oxygen (O) at a concentration of at least 1×1018 cm?3, the semiconductor A has a film thickness of at most 5 nm, and a current is injected in a stacking direction of the superlattice layers.
    Type: Grant
    Filed: December 22, 2014
    Date of Patent: December 15, 2015
    Assignee: Panasonic Intellectual Property Management Co., Ltd.
    Inventors: Masao Kawaguchi, Hideki Kasugai, Shinichiro Nozaki
  • Publication number: 20150146756
    Abstract: A semiconductor light emitting element includes an n-type light guide layer containing a group III nitride semiconductor, an active layer, and a p-type light guide layer, in which the n-type light guide layer includes a semiconductor superlattice layer which is a stack of superlattice layers, the semiconductor superlattice layer having a structure in which group III nitride semiconductors A and group III nitride semiconductors B are alternately stacked, each of the semiconductors A and each of the semiconductors B being stacked in each of the superlattice layers, a relationship Eg (A)>Eg (B) holds, the semiconductor A is a film containing AlInN, and the film contains oxygen (O) at a concentration of at least 1×1018 cm?3, the semiconductor A has a film thickness of at most 5 nm, and a current is injected in a stacking direction of the superlattice layers.
    Type: Application
    Filed: December 22, 2014
    Publication date: May 28, 2015
    Inventors: Masao KAWAGUCHI, Hideki KASUGAI, Shinichiro NOZAKI
  • Patent number: 8472491
    Abstract: A semiconductor laser device includes a semiconductor-layer lamination (20) having an active layer (26) formed over a substrate (11). The semiconductor-layer lamination (20) includes a front face which emits light, a strip-shaped optical waveguide formed in a direction transverse to the front face, a first region (20A) extending in a direction transverse to the front face, a second region (20B) having a top surface whose height is different from that of the first region (20A), and a planar region (20C) formed between the first region (20A) and the second region (20B), and having periodic surface undulations whose variation is smaller than that of the second region (20B). The optical waveguide is formed in the planar region (20C).
    Type: Grant
    Filed: October 16, 2009
    Date of Patent: June 25, 2013
    Assignee: Panasonic Corporation
    Inventor: Masao Kawaguchi
  • Patent number: 8422526
    Abstract: A semiconductor laser device includes a semiconductor multilayer structure selectively grown on a substrate other than on a predetermined region of the substrate. The semiconductor multilayer structure includes an active layer, and has a stripe-shaped optical waveguide extending in a direction intersecting a front facet through which light is emitted. The active layer has an abnormal growth portion formed at a peripheral edge of the predetermined region, and a larger forbidden band width portion formed around the abnormal growth portion and having a larger width of a forbidden band than that of a portion other than the abnormal growth portion of the active layer. The optical waveguide is spaced apart from the abnormal growth portion and includes the larger forbidden band width portion at the front facet.
    Type: Grant
    Filed: October 14, 2009
    Date of Patent: April 16, 2013
    Assignee: Panasonic Corporation
    Inventors: Katsuya Samonji, Masao Kawaguchi, Hideki Kasugai
  • Patent number: 8173264
    Abstract: A resin composition comprises a polyimide resin composition or precursor thereof obtained from an acid dianhydride component containing a compound represented by the following Formula (1) and a diamine component containing a diamine compound represented by the following Formula (2), and a bismaleimide compound represented by the following Formula (3), wherein the diamine component contains a diamine compound (a) in which m in the Formula (2) represents an integer of 0 or 1 and a diamine component (b) in which m in the Formula (2) represents an integer of 2 to 6 in a molar ratio (a:b) of from 100:0 to 50:50, wherein, in the Formula (2), when m is 2 or more, each X may be independently the same or different, and represents O, SO2, S, CO, CH2, C(CH3)2, C(CF3)2 or a direct bond, wherein, in the Formula (3), n represents an integer of 0 to 6.
    Type: Grant
    Filed: March 17, 2006
    Date of Patent: May 8, 2012
    Assignee: Mitsui Chemicals, Inc.
    Inventors: Masao Kawaguchi, Kiyomi Imagawa, Shuji Tahara, Eiji Ohtsubo
  • Patent number: 8119429
    Abstract: A p-type GaN guiding layer, an n-type GaN layer, and an n-type AlGaN current blocking layer are sequentially formed over an active layer, and then part of the current blocking layer is etched by using an alkali solution and irradiating the part with light to form an opening. Thereafter, a second p-type GaN guiding layer is formed on the current blocking layer to cover the opening. In this structure, the GaN layer has a smaller energy gap than the AlGaN current blocking layer.
    Type: Grant
    Filed: December 10, 2007
    Date of Patent: February 21, 2012
    Assignee: Pansonic Corporation
    Inventors: Satoshi Tamura, Hiroshi Ohno, Norio Ikedo, Masao Kawaguchi
  • Patent number: 8000365
    Abstract: A semiconductor laser device includes a multilayer structure made of group III nitride semiconductors formed on a substrate. The multilayer structure includes a MQW active layer, and also includes a step region selectively formed in an upper portion thereof. In another upper portion of the multilayer structure, a ridge stripe portion including a waveguide, which extends in parallel to a principal surface of the multilayer structure, is formed. In the vicinity of the step region, a first region, in which the MQW active layer has a bandgap energy of Eg1, is formed, and a second region, which is adjacent to the first region and in which the MQW active layer has a bandgap energy of Eg2 (Eg2<Eg1), is formed. The waveguide, which is formed so as to include the first and second regions and so as not to include the step region, performs self-oscillation.
    Type: Grant
    Filed: July 13, 2009
    Date of Patent: August 16, 2011
    Assignee: Panasonic Corporation
    Inventors: Norio Ikedo, Masao Kawaguchi, Masaaki Yuri
  • Publication number: 20110180394
    Abstract: There is provided a sputtering method in which abnormal discharging due to charge-up of a to-be-processed substrate is restrained and in which a good transparent conductive film can be formed on a to-be-processed large-area substrate. Out of a plurality of targets disposed side by side with, and at a predetermined distance from, one another so as to lie opposite to the to-be-processed substrate inside a sputtering chamber, electric power is applied, by alternately changing polarity at a predetermined frequency, to the targets that form respective pairs. Each target is thus alternately switched to anode electrode and cathode electrode. Glow discharge is thus generated between the anode electrode and the cathode electrode to thereby form plasma atmosphere, whereby each target is sputtered. During sputtering, electric power application to each of the targets is intermittently stopped.
    Type: Application
    Filed: August 18, 2008
    Publication date: July 28, 2011
    Inventors: Tatsunori Isobe, Takashi Komatsu, Shigemitsu Satou, Hiroki Oozora, Hideo Taniguchi, Masao Kawaguchi
  • Publication number: 20110051770
    Abstract: A semiconductor laser device includes a semiconductor-layer lamination (20) having an active layer (26) formed over a substrate (11). The semiconductor-layer lamination (20) includes a front face which emits light, a strip-shaped optical waveguide formed in a direction transverse to the front face, a first region (20A) extending in a direction transverse to the front face, a second region (20B) having a top surface whose height is different from that of the first region (20A), and a planar region (20C) formed between the first region (20A) and the second region (20B), and having periodic surface undulations whose variation is smaller than that of the second region (20B). The optical waveguide is formed in the planar region (20C).
    Type: Application
    Filed: October 16, 2009
    Publication date: March 3, 2011
    Inventor: Masao Kawaguchi
  • Publication number: 20110051765
    Abstract: A semiconductor laser device includes a semiconductor multilayer structure selectively grown on a substrate other than on a predetermined region of the substrate. The semiconductor multilayer structure includes an active layer, and has a stripe-shaped optical waveguide extending in a direction intersecting a front facet through which light is emitted. The active layer has an abnormal growth portion formed at a peripheral edge of the predetermined region, and a larger forbidden band width portion formed around the abnormal growth portion and having a larger width of a forbidden band than that of a portion other than the abnormal growth portion of the active layer. The optical waveguide is spaced apart from the abnormal growth portion and includes the larger forbidden band width portion at the front facet.
    Type: Application
    Filed: October 14, 2009
    Publication date: March 3, 2011
    Inventors: Katsuya Samonji, Masao Kawaguchi, Hideki Kasugai
  • Publication number: 20100074290
    Abstract: A semiconductor laser device has a stacked structure formed on a main surface of a substrate (1) and including an MQW active layer (5) made of a group-III nitride semiconductor. The stacked structure has a stripe-shaped waveguide formed on a main surface thereof. One of opposing facets of the waveguide is a light emitting facet. A first region having a forbidden band width Eg1 in the MQW active layer (5), and a second region located adjacent to the first region and having a forbidden band width Eg2 in the MQW active layer (5) (where Eg2?Eg1) are formed around the recess (2). The waveguide is formed so as to include the first region and the second region, and so as not to include the stepped region. The light emitting facet is formed in one (5a) of the first region and the second region, which has a shorter light absorption wavelength.
    Type: Application
    Filed: October 15, 2008
    Publication date: March 25, 2010
    Inventors: Masao Kawaguchi, Masaaki Yuri
  • Publication number: 20100027575
    Abstract: A semiconductor laser device includes a multilayer structure made of group III nitride semiconductors formed on a substrate. The multilayer structure includes a MQW active layer, and also includes a step region selectively formed in an upper portion thereof. In another upper portion of the multilayer structure, a ridge stripe portion including a waveguide, which extends in parallel to a principal surface of the multilayer structure, is formed. In the vicinity of the step region, a first region, in which the MQW active layer has a bandgap energy of Eg1, is formed, and a second region, which is adjacent to the first region and in which the MQW active layer has a bandgap energy of Eg2 (Eg2<Eg1), is formed. The waveguide, which is formed so as to include the first and second regions and so as not to include the step region, performs self-oscillation.
    Type: Application
    Filed: July 13, 2009
    Publication date: February 4, 2010
    Inventors: Norio Ikedo, Masao Kawaguchi, Masaaki Yuri
  • Publication number: 20090280339
    Abstract: Disclosed is a polyimide metal laminate having a metal layer with high adhesiveness. This polyimide metal laminate is suitable as a material for high-density circuit boards. Specifically disclosed is a polyimide film characterized by being surface-treated with an aqueous solution containing an alcohol amine and an alkali metal hydroxide. Also specifically disclosed is a polyimide metal laminate obtained by providing the surface of such a polyimide film with a thermoplastic polyimide and then forming a metal layer on the outer side of the thermoplastic polyimide layer. Further specifically disclosed is a method for manufacturing such a polyimide metal laminate.
    Type: Application
    Filed: April 5, 2006
    Publication date: November 12, 2009
    Applicant: Mitsui Chemicals ,Inc.
    Inventors: Takeshi Tsuda, Eiji Ohtsubo, Masao Kawaguchi, Shuji Tahara, Kenji Iida
  • Publication number: 20090075103
    Abstract: A resin composition comprises a polyimide resin composition or precursor thereof obtained from an acid dianhydride component containing a compound represented by the following Formula (1) and a diamine component containing a diamine compound represented by the following Formula (2), and a bismaleimide compound represented by the following Formula (3), wherein the diamine component contains a diamine compound (a) in which m in the Formula (2) represents an integer of 0 or 1 and a diamine component (b) in which m in the Formula (2) represents an integer of 2 to 6 in a molar ratio (a:b) of from 100:0 to 50:50, wherein, in the Formula (2), when m is 2 or more, each X may be independently the same or different, and represents O, SO2, S, CO, CH2, C(CH3)2, C(CF3)2 or a direct bond, wherein, in the Formula (3), n represents an integer of 0 to 6.
    Type: Application
    Filed: March 17, 2006
    Publication date: March 19, 2009
    Applicant: Mitsui Chemicals, Inc.
    Inventors: Masao Kawaguchi, Kiyomi Imagawa, Shuji Tahara, Eiji Ohtsubo
  • Publication number: 20080299402
    Abstract: The present invention relates to a polyimide-metal laminate that ensures a high adhesion of a metal layer and suitable for use as a material of a high density circuit board. In particular, it provides a polyimide film characterized by having undergone a surface treatment with an alkaline aqueous solution containing a permanganate. The alkaline aqueous solution preferably contains a hydroxide. It also provides a polyimide-metal laminate characterized in that on a surface of the polyimide film a thermoplastic polyimide layer and a metal layer are formed, and a method of producing the polyimide-metal laminate.
    Type: Application
    Filed: December 3, 2007
    Publication date: December 4, 2008
    Applicant: Mitsui Chemicals, Inc.
    Inventors: Masao Kawaguchi, Eiji Ohtsubo, Takeshi Tsuda, Shuji Tahara, Kenji Iida
  • Publication number: 20080144684
    Abstract: A p-type GaN guiding layer, an n-type GaN layer, and an n-type AlGaN current blocking layer are sequentially formed over an active layer, and then part of the current blocking layer is etched by using an alkali solution and irradiating the part with light to form an opening. Thereafter, a second p-type GaN guiding layer is formed on the current blocking layer to cover the opening. In this structure, the GaN layer has a smaller energy gap than the AlGaN current blocking layer.
    Type: Application
    Filed: December 10, 2007
    Publication date: June 19, 2008
    Inventors: Satoshi TAMURA, Hiroshi Ohno, Norio Ikedo, Masao Kawaguchi