Abstract: Disclosed is a resin paste for die bonding comprising a butadiene homopolymer or copolymer (A) having a carboxylic acid terminal group, a thermosetting resin (B), a filler (C), and a printing solvent (D), wherein the elastic modulus of the resin paste following drying and curing is within a range from 1 to 300 MPa (25° C.). The solid fraction is preferably from 40 to 90% by weight, the thixotropic index is preferably from 1.5 to 8.0, and the viscosity (25° C.) is preferably from 5 to 1,000 Pa·s. Using this resin paste, a semiconductor device is produced by a method comprising (1) applying a predetermined quantity of the resin paste to a substrate, (2) drying the resin paste to effect B-staging of the resin, (3) mounting a semiconductor chip on the B-staged resin, and (4) conducting post-curing of the resin.

Abstract: A resin-sealed semiconductor device which comprises a lead frame having a die bond pad and an inner lead, a semiconductor chip installed on the die bond pad via a die bonding material and a sealing material for sealing the semiconductor chip and the lead frame, wherein properties of the die bonding material and the sealing material after curing satisfies the following formulae: &sgr;e≦0.2×&sgr;b formula (1) Ui≧2.0×10−6×&sgr;ei formula (2) Ud≧4.

Abstract: A resin-sealed semiconductor device which comprises a lead frame having a die bond pad and an inner lead, a semiconductor chip installed on the die bond pad via a die bonding material and a sealing material for sealing the semiconductor chip and the lead frame, wherein properties of the die bonding material and the sealing material after curing satisfies the following formulae: &sgr;e≦0.2×&sgr;b formula (1) Ui≧2.0×10−6×&sgr;ei formula (2) Ud≧4.

Abstract: An adhesive composition comprising (a) an epoxy resin obtained by reacting a 1,3-bis(dicarboxyphenyl)-1,1,3,3-tetrasubstituted disiloxane dianhydride with an alcohol or alcohol derivative, followed by reaction with an epoxy compound having two or more epoxy groups, or an epoxy resin obtained by reacting a 1,3-bis(dicarboxyphenyl)-1,1,3,3-tetrasubstituted disiloxane with an epoxy compound having two or more epoxy groups and (b) a curing agent is suitable for bonding semiconductor chips to a copper frame with a small warpage of the chips.

Abstract: An adhesive composition comprising (a) an epoxy resin obtained by reacting a 1,3-bis(dicarboxyphenyl)-1,1,3,3-tetrasubustituted disiloxane dianhydride with an alcohol or alcohol derivative, followed by reaction with an epoxy compound having two or more epoxy groups, or an epoxy resin obtained by reacting a 1,3-bis(dicarboxyphenyl)-1,1,3,3-tetrasubstituted disiloxane with an epoxy compound having two or more epoxy groups and (b) a curing agent is suitable for bonding semiconductor chips to a copper frame with a small warpage of the chips.

Abstract: An electroconductive resin paste suitable for bonding a semiconductor element onto a substrate and exhibiting a superior adhesion strength and processability when heated to 200.degree. C. to 350.degree. C., and a process for producing a semiconductor device using the electroconductive resin paste are provided, which electroconductive resin paste comprises.(A) a mixed epoxy resin of a phenolic novolac type epoxy resin with an epi-bis type epoxy resin,(B) a phenolic novolac resin and/or phenol aralkyl resin,(C) organic borate,(D) a diluent containing a silane compound having one glycidyl group as at least one component therein, and(E) an electroconductive metal powder.