Abstract: An inverter comprising four quantum dot cells. When the quantum dot cells are arranged in 9 o'clock direction, 12 o'clock direction and 3 o'clock direction, the quantum dot cell is arranged in 6 o'clock direction.

Abstract: Disclosed is a semiconductor device comprising a semiconductor BCN compound layer and a metallic BCN compound layer and/or an insulating BCN compound layer, wherein the semiconductor BCN compound layer and the metallic BCN compound layer and/or insulating BCN compound layer are stacked one upon the other.

Abstract: An apparatus for forming a II-VI Group compound thin film containing nitrogen as an impurity, on a substrate, comprises a container for holding a substrate, a vapor source for supplying Zn vapor on a surface of the substrate, a vapor source for supplying Se vapor on the surface of the substrate, and a discharge tube into which a nitrogen gas is introduced, having three-divided internal portions, a high-pressure portion, a middle-pressure portion, and a low-pressure portion from the gas introduction side, and supplying excitation species derived from discharge plasma generated in the low-pressure portion onto the surface of the substrate. Zn vapor and Se vapor are alternately supplied, and supply of nitrogen excitation species is performed in synchronous with supply of Zn vapor.

Abstract: Disclosed is a method of efficiently manufacturing a III-V group compound semiconductor that carbon mixing is reduced, wherein a compound represented by the formula (1) or (2) is used as a V group source: ##STR1## wherein X represents a V group element, n represents integer of 1 to 3, and Y represents electron-releasing group bonded to a position selected from 2-, 4-, and 6-positions, ##STR2## wherein X represents a V group element, m represents an integer of 1 or 2, and Y represents electron-releasing group bonded to a position selected from 2- and 4-positions.

Abstract: Disclosed is a method of selective chemical vapor deposition for selectively forming thin films of a semiconductor, dielectric or metal on a semiconductor by providing a mask of SiO.sub.2 having a plurality of openings in various forms on the substrate, wherein a trimethyl gallium (TMG) gas as a Group III material, 10% hydrogen-based arsine (AsH.sub.3) gas as a Group V material, and 500 ppm hydrogen-based disilane (Si.sub.2 H.sub.6) gas as an n-type impurity material are alternately supplied onto the substrate, and each supply amount of the material gases is controlled at a value to obtain a film growth rate for forming the corresponding monoatomic layer or monomolecular layer to each material at each opening. Also disclosed is an apparatus for performing the above-disclosed method of chemical vapor deposition, wherein four reaction chambers are included, and the material gases are supplied to the respective reaction chambers in accordance with the following gas supply sequences: Chamber 1: TMG+H.sub.2 /H.

Abstract: A vapor-phase epitaxial growth method for group III-V compound semiconductor crystal layers by which alternating layers of (InAs)1 and (GaAs)1 are grown on an InP substrate by means of vapor-phase epitaxy while different material gases are supplied alternately. The substrate is irradiated with excimer laser light when a specific layer of the crystal layers is grown, thereby controlling the thickness of the specific crystal layer on a monoatomic scale.

Abstract: Disclosed is an optical recording medium. This optical recording medium has a substrate made of a transparent material such as an acrylic resin; and a recording layer for receiving an energy beam such as a laser beam whose intensity is changed in response to quantized information and for receiving desired information by melt-deforming in response to the intensity of the energy beam. The recording layer contains tellurium as a base material and carbon at a predetermined content of 40 atomic percent.

Abstract: The elastic surface wave device comprises a piezoelectric substrate having a dielectric constant of .epsilon..sub.2, a dielectric film having a dielectric constant of .epsilon..sub.1 and a thickness of h, and deposited on the piezoelectric substrate, and an inter-digital type input-ouput transducer formed on the dielectric film. The ratio of the dielectric constants .epsilon..sub.1 /.epsilon..sub.2, and a function 2.pi./.lambda..multidot.h proportioned to the thickness of the dielectric film are selected to satisfy a condition established in a frustum shaped region bounded by coordinate points P (.epsilon..sub.1 /.epsilon..sub.2 = 1/5,(2.pi./.lambda.).multidot.h = 0.1), Q(.epsilon..sub.1 /.epsilon..sub.2 = 1/5,(2.pi./.lambda.).multidot.h = 0.00016), R(.epsilon..sub.1 /.epsilon..sub.2 = 1/500,(2.pi./.lambda.).multidot.h = 0.0004), and S(.epsilon..sub.1 /.epsilon..sub.2 = 1/500, (2.pi./.lambda.).multidot.h = 0.006) on a graph wherein the ratio .epsilon..sub.1 /.epsilon..sub.