Patents by Inventor Masao Nagakubo

Masao Nagakubo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9328308
    Abstract: The invention provides a grease composition containing a thickener and a base oil, wherein the base oil contains (a) a hydrocarbon oil extracted from Botryococcus braunii and/or (b) a hydrocarbon oil obtainable by hydrogenating the hydrocarbon oil (a).
    Type: Grant
    Filed: February 21, 2013
    Date of Patent: May 3, 2016
    Assignees: KYODO YUSHI CO., LTD., DENSO CORPORATION, UNIVERSITY OF TSUKUBA
    Inventors: Makoto Hayama, Hitoshi Kuno, Masao Nagakubo, Shozo Ikejima, Makoto Watanabe
  • Publication number: 20150024982
    Abstract: The invention provides a grease composition containing a thickener and a base oil, wherein the base oil contains (a) a hydrocarbon oil extracted from Botryococcus braunii and/or (b) a hydrocarbon oil obtainable by hydrogenating the hydrocarbon oil (a).
    Type: Application
    Filed: February 21, 2013
    Publication date: January 22, 2015
    Inventors: Makoto Hayama, Hitoshi Kuno, Masao Nagakubo, Shozo Ikejima, Makoto Watanabe
  • Patent number: 7879150
    Abstract: A silicon carbide manufacturing device includes a graphite crucible, in which a seed crystal is disposed, a gas-inducing pipe coupled with the graphite crucible, and an attachment prevention apparatus. The gas-inducing pipe has a column-shaped hollow part, through which a source gas flows into the graphite crucible. The attachment prevention apparatus includes a rod extending to a flow direction of the source gas, and a revolving and rotating element for revolving the rod along an inner wall of the gas-inducing pipe while rotating the rod on an axis of the rod in parallel to the flow direction.
    Type: Grant
    Filed: September 4, 2007
    Date of Patent: February 1, 2011
    Assignee: DENSO CORPORATION
    Inventors: Masao Nagakubo, Fusao Hirose, Yasuo Kitoh
  • Publication number: 20080053371
    Abstract: A silicon carbide manufacturing device includes a graphite crucible, in which a seed crystal is disposed, a gas-inducing pipe coupled with the graphite crucible, and an attachment prevention apparatus. The gas-inducing pipe has a column-shaped hollow part, through which a source gas flows into the graphite crucible. The attachment prevention apparatus includes a rod extending to a flow direction of the source gas, and a revolving and rotating element for revolving the rod along an inner wall of the gas-inducing pipe while rotating the rod on an axis of the rod in parallel to the flow direction.
    Type: Application
    Filed: September 4, 2007
    Publication date: March 6, 2008
    Applicant: DENSO CORPORATION
    Inventors: Masao Nagakubo, Fusao Hirose, Yasuo Kitoh
  • Patent number: 7112242
    Abstract: A crucible, which has first member and second cylindrical body, is disposed in a lower chamber. A pedestal is disposed inside the first member, and a seed crystal is fixed to the pedestal. A second heat insulator is provided between an inlet conduit and a crucible. A first heat insulator is provided at a halfway portion of the inlet conduit. With these heat insulators, a temperature gradient occurs in the inlet conduit at a portion thereof that is closer to the crucible. A mixture gas is introduced into the crucible. The mixture gas is heated up gradually when passing through the inlet conduit and is introduced into the crucible to form SiC single crystals in high quality.
    Type: Grant
    Filed: June 22, 2004
    Date of Patent: September 26, 2006
    Assignee: Denso Corporation
    Inventors: Kazukuni Hara, Masao Nagakubo, Shoichi Onda
  • Patent number: 6830618
    Abstract: A crucible, which has first member and second cylindrical body, is disposed in a lower chamber. A pedestal is disposed inside the first member, and a seed crystal is fixed to the pedestal. A second heat insulator is provided between an inlet conduit and a crucible. A first heat insulator is provided at a halfway portion of the inlet conduit. With these heat insulators, a temperature gradient occurs in the inlet conduit at a portion thereof that is closer to the crucible. A mixture gas is introduced into the crucible. The mixture gas is heated up gradually when passing through the inlet conduit and is introduced into the crucible to form SiC single crystals in high quality.
    Type: Grant
    Filed: November 1, 2001
    Date of Patent: December 14, 2004
    Assignee: Denso Corporation
    Inventors: Kazukuni Hara, Masao Nagakubo, Shoichi Onda
  • Publication number: 20040231583
    Abstract: A crucible, which has first member and second cylindrical body, is disposed in a lower chamber. A pedestal is disposed inside the first member, and a seed crystal is fixed to the pedestal. A second heat insulator is provided between an inlet conduit and a crucible. A first heat insulator is provided at a halfway portion of the inlet conduit. With these heat insulators, a temperature gradient occurs in the inlet conduit at a portion thereof that is closer to the crucible. A mixture gas is introduced into the crucible. The mixture gas is heated up gradually when passing through the inlet conduit and is introduced into the crucible to form SiC single crystals in high quality.
    Type: Application
    Filed: June 22, 2004
    Publication date: November 25, 2004
    Inventors: Kazukuni Hara, Masao Nagakubo, Shoichi Onda
  • Patent number: 6770137
    Abstract: A crucible has first member and second cylindrical body, and is disposed in a lower chamber. The fist member is disposed in the second cylindrical body so as to define a gas flow path formed therebetween as a gap. A pedestal is disposed inside the first member. A seed crystal is fixed to the pedestal. SiC single crystals are formed on the pedestal by introducing a mixture gas through an inlet conduit. During growth of the SiC single crystals, conductance in introduction of the mixture gas into the crucible is larger than that in exhaust of the mixture gas, so that pressure of the mixture gas in the crucible is larger than that of the mixture gas after exhausted from the crucible.
    Type: Grant
    Filed: November 2, 2001
    Date of Patent: August 3, 2004
    Assignee: Denso Corporation
    Inventors: Kazukuni Hara, Masao Nagakubo, Shoichi Onda
  • Patent number: 6555901
    Abstract: A sensing element is formed on a silicon (Si) substrate and covered with a cap. The cap has a leg portion having a titanium layer and a gold layer formed in that order on the lower surface thereof. The silicon substrate has an Si bonding frame at a position corresponding to the leg portion. When bonding the Si bonding frame of the silicon substrate and the leg portion of the cap, the titanium layer deoxidizes a naturally oxidized silicon layer formed on the Si bonding frame, whereby the silicon substrate and the cap can be uniformly bonded together with an Au/Si eutectic portion interposed therebetween. In this case, the Au/Si eutectic portion includes a titanium oxide accompanying the deoxidization of the naturally oxidized silicon layer.
    Type: Grant
    Filed: October 3, 1997
    Date of Patent: April 29, 2003
    Assignee: DENSO Corporation
    Inventors: Shinji Yoshihara, Fumio Ohara, Masao Nagakubo
  • Publication number: 20020104478
    Abstract: A silicon carbide single crystal substrate and silicon carbide raw material powder are provided in a graphite vessel. Arsenic or an arsenic compound is added to the silicon carbide raw material powder. A mixed gas obtained by mixing a gas containing arsenic with a raw material gas formed by heat sublimation of the silicon carbide raw material powder is supplied to the silicon carbide single crystal substrate to grow a silicon carbide single crystal containing arsenic. Arsenic as an n-type dopant controls the resistivity of the silicon carbide single crystal. Because it has an atomic radius equivalent to silicon, it does not compress or expand the crystal, whereby crystalline distortion is less likely to occur. As a result, formation of heterogeneous polymorphism is suppressed.
    Type: Application
    Filed: January 30, 2002
    Publication date: August 8, 2002
    Inventors: Emi Oguri, Fusao Hirose, Hironari Kuno, Masao Nagakubo, Shoichi Onda
  • Publication number: 20020056412
    Abstract: A crucible has first member and second cylindrical body, and is disposed in a lower chamber. The fist member is disposed in the second cylindrical body so as to define a gas flow path formed therebetween as a gap. A pedestal is disposed inside the first member. A seed crystal is fixed to the pedestal. SiC single crystals are formed on the pedestal by introducing a mixture gas through an inlet conduit. During growth of the SiC single crystals, conductance in introduction of the mixture gas into the crucible is larger than that in exhaust of the mixture gas, so that pressure of the mixture gas in the crucible is larger than that of the mixture gas after exhausted from the crucible.
    Type: Application
    Filed: November 2, 2001
    Publication date: May 16, 2002
    Inventors: Kazukuni Hara, Masao Nagakubo, Shoichi Onda
  • Publication number: 20020056411
    Abstract: A crucible, which has first member and second cylindrical body, is disposed in a lower chamber. A pedestal is disposed inside the first member, and a seed crystal is fixed to the pedestal. A second heat insulator is provided between an inlet conduit and a crucible. A first heat insulator is provided at a halfway portion of the inlet conduit. With these heat insulators, a temperature gradient occurs in the inlet conduit at a portion thereof that is closer to the crucible. A mixture gas is introduced into the crucible. The mixture gas is heated up gradually when passing through the inlet conduit and is introduced into the crucible to form SiC single crystals in high quality.
    Type: Application
    Filed: November 1, 2001
    Publication date: May 16, 2002
    Inventors: Kazukuni Hara, Masao Nagakubo, Shoichi Onda
  • Patent number: 6356032
    Abstract: An organic EL element has an anode made of transparent conductive material such as ITO and a cathode made of metallic material such as Al. Further, a hole injection layer, a hole transport layer, an electron transport layer, and an electron injection layer are disposed between the anode and the cathode. The cathode is composed of a thin film layer and a thick film layer partially overlapping with the thin film layer. The thin film layer can transmit light and the thick film layer can suppress an increase in wiring resistance of the cathode.
    Type: Grant
    Filed: August 30, 2000
    Date of Patent: March 12, 2002
    Assignee: Denso Corporation
    Inventors: Harumi Suzuki, Masao Nagakubo
  • Patent number: 5904860
    Abstract: Nitrogen atoms on the surface of a first body are terminated by hydrogen atoms after the surfaces of the first body and a second body to which it is to be bonded are cleaned. The surface of the first body terminated by the hydrogen atoms and the surface of the second body are bonded to each other so that hydrogen bonds are formed between the nitrogen atoms and the bonded hydrogen atoms on the surface of the first body and the atoms on the surface of the second body. Using these hydrogen bonds, the surface of the first body and the surface of the second body are strongly bonded to each other. When the surface of the second body is formed with nitride or oxide, strong hydrogen bonds of N--H .sup.- - - N or N--H .sup.- - - O are formed between the first body and the second body. Thus, the method does not require bonding under high temperature or high pressure.
    Type: Grant
    Filed: September 12, 1996
    Date of Patent: May 18, 1999
    Assignee: Nippondenso Co., Ltd.
    Inventors: Masao Nagakubo, Harumi Suzuki, Takashi Kurahashi
  • Patent number: 5421953
    Abstract: Bodies of at least one material are held in a contacting holder 12 in a vacuum chamber. The surfaces of the bodies are cleaned by a low energy ion etching. Water vapor from a pure water bottle is supplied through a nozzle as a water molecule beam so that water molecules and hydroxide groups are chemically adsorbed on the surfaces of the bodies. A plasma beam or microwaves are applied to the surfaces of the bodies to remove the water molecules and leave only hydroxide groups remaining on the surfaces. The holder is operated to bring the surfaces of the bodies into contact with each other, to thereby obtain direct bonding of the bodies.
    Type: Grant
    Filed: February 16, 1994
    Date of Patent: June 6, 1995
    Assignee: Nippondenso Co., Ltd.
    Inventors: Masao Nagakubo, Seiji Fujino, Kouji Senda, Tadashi Hattori