Abstract: A semiconductor device includes: an insulating film formed above a semiconductor substrate; a pad formed on the insulating film; a passivation film formed on the insulating film and the pad, the passivation film being provided with a first opening positioned on the pad; a first bulge member formed on the passivation film; a first insulating layer formed on the passivation film and the first bulge member, the first insulating layer being provided with a second opening positioned on the first opening; and rewiring formed on the first insulating layer and connected to the pad via the first opening and second opening.

Abstract: A base member is blasted to roughen the surface. Next, a thermal spray member containing for example Al is formed on the blast treated surface of the base member by a thermal spraying. Next, an extremely thin oxide film at an atom layer level is coated on the surface of the thermal spray member, as an uppermost surface. The oxide film is a layer that is formed from stacked layers of about 15 to 23 atoms, and is formed by an O2 or O3 gas plasma, an atmospheric pressure plasma, or a CVD (chemical vapor deposition) method. A nitride film can be coated instead of the oxide film.

Abstract: A sputtering apparatus having a target jig that can suppress abnormal discharges such as micro-arcs is provided. A magnetron sputtering apparatus having a vacuum container in which a retaining section (an anode side) for retaining a wafer WF, a shutter, and a target (a cathode side) are provided. There are provided a backing plate (a copper plate for cooling) connected to the target and a copper plate (connected to an electrode) which contains magnets and conducts cooling water. An earth shield is provided around the target, to be separated from the electrode on the target side. A gap between a target jig and a projected portion of the earth shield is the narrowest, and surfaces of the target jig and the projected portion of the earth shield are finished into mirror surfaces.

Abstract: A sputtering apparatus having a target jig that can suppress abnormal discharges such as micro-arcs is provided. A magnetron sputtering apparatus having a vacuum container in which a retaining section (an anode side) for retaining a wafer WF, a shutter, and a target (a cathode side) are provided. There are provided a backing plate (a copper plate for cooling) connected to the target and a copper plate (connected to an electrode) which contains magnets and conducts cooling water. An earth shield is provided around the target, to be separated from the electrode on the target side. A gap between a target jig and a projected portion of the earth shield is the narrowest, and surfaces of the target jig and the projected portion of the earth shield are finished into mirror surfaces.

Abstract: A base member is blasted to roughen the surface. Next, a thermal spray member containing for example Al is formed on the blast treated surface of the base member by a thermal spraying. Next, an extremely thin oxide film at an atom layer level is coated on the surface of the thermal spray member, as an uppermost surface. The oxide film is a layer that is formed from stacked layers of about 15 to 23 atoms, and is formed by an O2 or O3 gas plasma, an atmospheric pressure plasma, or a CVD (chemical vapor deposition) method. A nitride film can be coated instead of the oxide film.

Abstract: In order to ensure an easy operation, a decreased cost in maintenance and installation, and a safe and effective use of chlorine gas generated in a closed system, a new method for treating an etchant is offered. The method comprises the following steps of; 1 treating an etchant including copper (I) chloride or ferric chloride containing copper by means of an electrolysis using a diaphragm to withdraw copper electrolytically deposited in a cathode cell, 2 supplying chlorine gas generated in an anode cell into another etchant used in an etching process, thereby enabling the etchant to be regenerated.